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FCH76N60NF Price and Stock

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Rochester Electronics LLC FCH76N60NF POWER FIELD-EFFECT TRANSISTOR, 7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCH76N60NF	Bulk	539		24	1 - 10 - 100 $12.89 1000 $12.89 10000 $12.89	Buy Now
onsemi FCH76N60NF MOSFET N-CH 600V 72.8A TO247-3
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DigiKey	FCH76N60NF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	FCH76N60NF		539		1	1 $13 10 $13 100 $12.22 1000 $11.05 10000 $11.05	Buy Now
TME	FCH76N60NF				1	1 $21.72 10 $19.55 100 $17.29 1000 $15.56 10000 $15.56	Get Quote
Fairchild Semiconductor Corporation FCH76N60NF Power Field-Effect Transistor, 72.8A, 600V, 0.038ohm, N-Channel, MOSFET, TO-247AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FCH76N60NF		29,286		1	1 $13 10 $13 100 $12.22 1000 $11.05 10000 $11.05	Buy Now

FCH76N60NF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FCH76N60NF		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 72.8A TO247-3		Original	PDF

FCH76N60NF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FCH76N60 Abstract: No abstract text available Text: SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	PDF	FCH76N60NF FCH76N60NF 230nC) FCH76N60
FCH76N60NF Abstract: No abstract text available Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	PDF	FCH76N60NF 230nC) FCH76N60NF
fch76n60nF Abstract: No abstract text available Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology	Original	PDF	FCH76N60NF FCH76N60NF
Untitled Abstract: No abstract text available Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	PDF	FCH76N60NF 230nC)
Untitled Abstract: No abstract text available Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology	Original	PDF	FCH76N60NF
FCH76N60NF Abstract: No abstract text available Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology	Original	PDF	FCH76N60NF FCH76N60NF
Untitled Abstract: No abstract text available Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 31.5mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	PDF	FCH76N60NF FCH76N60NF 230nC)