Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FD-111 DIODE Search Results

    FD-111 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FD-111 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR2103 bldc driver

    Abstract: 60NF60 e bike motor controller Electric Bike microcontroller ARM circuit active brake mosfet switch BLDC Motor 75N75 TE 555-1 HT45B0C ADC 7815
    Text: Driving a BLDC Motor Using the HT45FM03B – C Language Driving a BLDC Motor Using the HT45FM03B – C Language D/N：HA0230E Introduction Brushless DC motors, which are controlled using electric commutation and PWM modulation, have the advantages of greater motor life by overcoming the problems associated with DC


    Original     		PDF HT45FM03B D/NHA0230E HT45FM03B IR2103 bldc driver 60NF60 e bike motor controller Electric Bike microcontroller ARM circuit active brake mosfet switch BLDC Motor 75N75 TE 555-1 HT45B0C ADC 7815

    IR2103 bldc driver

    Abstract: electric bike motor assembly language program for speed control e bike motor controller IC2 7805 active brake mosfet switch BLDC Motor HT45B0C assembly language program for speed control of dc brushless bike brushless dc motor speed control bike
    Text: Driving a BLDC Motor using the HT45FM03B Assembly Language Driving a BLDC Motor using the HT45FM03B (Assembly Language) D/N：HA0229E Introduction Brushless DC motors, in using electric commutation and PWM drive methods, greatly extend the life of electric motors, by overcoming problems derived from DC motor mechanical


    Original     		PDF HT45FM03B D/NHA0229E HT45FM03B IR2103 bldc driver electric bike motor assembly language program for speed control e bike motor controller IC2 7805 active brake mosfet switch BLDC Motor HT45B0C assembly language program for speed control of dc brushless bike brushless dc motor speed control bike

    thyristor tag 8422

    Abstract: ditty EPC-31 gpr 163 MIPS R4000 mmi2 thyristor handbook transistor mfsa 42 C790 D-10
    Text: TX System RISC TX79 Core Architecture Symmetric 2-way superscalar 64-bit CPU Rev. 2.0 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 64-bit thyristor tag 8422 ditty EPC-31 gpr 163 MIPS R4000 mmi2 thyristor handbook transistor mfsa 42 C790 D-10

    Untitled

    Abstract: No abstract text available
    Text: LTC2389-16 16-Bit, 2.5Msps SAR ADC with Pin-Configurable Analog Input Range and 96dB SNR DESCRIPTION FEATURES n n n n n n n n n n n n n n The LTC 2389-16 is a low noise, high speed 16-bit successive approximation register SAR ADC. Operating from a single 5V supply, the LTC2389-16 supports pinconfigurable fully differential (±4.096V), pseudo-differential unipolar (0V to 4.096V), and pseudo-differential


    Original     		PDF LTC2389-16 16-Bit, 16-bit LTC2389-16 16-bits, 215MHz 100kHz) LT6202/LT6203 100MHz

    DC182

    Abstract: No abstract text available
    Text: LTC2389-16 16-Bit, 2.5Msps SAR ADC with Pin-Configurable Analog Input Range and 96dB SNR Description Features 2.5Msps Throughput Rate n ±1LSB INL Max n Guaranteed 16-Bit, No Missing Codes n Pin-Configurable Analog Input Range: ±4.096V Fully Differential


    Original     		PDF 16-Bit, 116dB 112dB 20ppm/ n48-pin LTC2389-16 215MHz 100MHz 18-Bit, DC182

    ADM1033 D

    Abstract: fs5 mosfet 1404D
    Text: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also


    Original     		PDF ADM1033 2N3904/6s ADM1033/D ADM1033 D fs5 mosfet 1404D

    Untitled

    Abstract: No abstract text available
    Text: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also


    Original     		PDF ADM1033 ADM1033 2N3904/6s ADM1033/D

    TJA1145/FD

    Abstract: No abstract text available
    Text: TJA1145 High-speed CAN transceiver for partial networking Rev. 2 — 18 April 2014 Product data sheet 1. General description The TJA1145 is a high-speed CAN transceiver that provides an interface between a Controller Area Network CAN protocol controller and the physical two-wire CAN bus.


    Original     		PDF TJA1145 TJA1145 TJA1145/FD

    1RFD110

    Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
    Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111

    Sharp IXD 067

    Abstract: IXD 067 LH0080A LH0080A SHARP Z80B-CPU sharp z80 Sharp LH0080A LH0080 Z80E Z80B
    Text: LH0080 Z80 CPU Central Processing Unit LH0080 • Z80 CPU Central Processing Unit Description Pin Connections The L H 0 0 8 0 Z 8 0 CPU Z 80 CPU for sh ort be­ low is a g e n e r a l-p u r p o se 8 - b i t m icrop rocessor fabricated usin g an N -chan nel silic o n -g a te process.


    OCR Scan     		PDF LH0080 LH0080 LH0080A LH0080B LH0080E Sharp IXD 067 IXD 067 LH0080A SHARP Z80B-CPU sharp z80 Sharp LH0080A Z80E Z80B

    Untitled

    Abstract: No abstract text available
    Text: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113

    siemens igbt BSM 150 gb 100 d

    Abstract: CJ 53B siemens igbt BSM100GB160D csccn
    Text: SIEMENS BSM 100 GB 160 D IGBT Module VCE= 1600 V 'c =2* 135 A at TC=25°c 'c = 2* 100 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half-bridge Type Ordering code BSM 100 GB 160D


    OCR Scan     		PDF 100gb16a C67076-A2112-A2 20ki2 A23SbG5 flS35bD5 00b0S3S BSM100GB160D gm105270 023SbOS siemens igbt BSM 150 gb 100 d CJ 53B siemens igbt BSM100GB160D csccn

    BSM111

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module VDS /D BSM 111 AR C = 100 V = 200 A ^DS(on) = 8*5 mQ • • • • • • Power m odule Single switch N channel Enhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 1 a ’ ) Type Ordering code


    OCR Scan     		PDF

    DIODE A93

    Abstract: 251C FDF60BA 5210s TI-251
    Text: DIODE M ODULE F.R.D. FDF60BA40/60 UL;E76102(M ) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed


    OCR Scan     		PDF FDF60BA40/60 FDF60BA 100ns DC60A E76102 for36 00D1S23 FDF60BA 7CH1243 DIODE A93 251C 5210s TI-251

    Untitled

    Abstract: No abstract text available
    Text: "2 -4 -r'style split-bobbin transform ers for triple-output pp applications (type MT1 S q nal bn:. e xl Rn dt - d Is linn nl tr h nsfon111; is ter n ! [ i , ' o ; r ( j u : .sor h p p sat o n s II I hi no r i r . v s z a s r;itf;(i to IOCj VA ra l e d in lei ms o ‘ t u e I nal DC;


    OCR Scan     		PDF nsfon111; e-ot111 3/18Ma

    irf 560

    Abstract: Diode LT 58A 9410A
    Text: FAIRCHILD March 1997 M lC O N D U C T O R FDR9410A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF FDR9410A irf 560 Diode LT 58A 9410A

    Untitled

    Abstract: No abstract text available
    Text: D EVELO PM EN T DATA PCD3360 T h is data sheet co n ta in s advance in fo rm a tio n and sp e cificatio n s are su b ject to change w ith o u t n otice. - A _ PROGRAMMABLE MULTI-TONE TELEPHONE RINGER G E N E R A L D ESC R IPTIO N The PCD3360 is a CMOS integrated circuit, designed to replace the electro-mechanical bell in telephone


    OCR Scan     		PDF PCD3360 PCD3360 PCDM360 BST72A

    Datenbuch

    Abstract: Raupenhaus hermsdorf VEB Halbleiterbauelemente thermistore Scans-048 Frankfurt Oder LB1201 DSAGER0002 Thermistor 15k
    Text: I I i n □ electronic Hinweis: Die Daten von Dioden und Transistoren aus dieser Unterlage sind bereits in anderen Datenbüchern des Raupenhauses enthalten. Deshalb wurde aus diesem Buch nur der Teil "Halbleiter-Widerstände" entnommen. Halbleiter-Bauelemente


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: U N IV E R S A L S M A L L S IG N A L CS4R101A SOLID STATE RELAY S4 R • • • • • • • • A L L CO NTACT FORMS IN A SING LE PACKAGE ZERO D R Y C IR C U IT CONTACT P O TE N TIA L OPEN CO NTACT RESISTANCE > 10,000 MEGOHM ZERO CONTACT BOUNCE OPERATE TIM E < 3^S


    OCR Scan     		PDF CS4R101A CS4R101A

    FD-111 diode

    Abstract: 9109 DC FD-111 transistor U6A910959X w9109 9109 510SI fairchild micrologic ScansUX978
    Text: P R E L I M I N A R Y D A T A S H E E T • O C T O B E R 1967 • HLLDTuL9109 HLLDTuL 9109 HIGH LE V E L LOGIC DIO D E T R A N S I S T O R M I C R O L O G I C - HIGH HIGH VOLTAGE HEX INVERTER I N T E G R A T E D CIR CUIT S VOLTAGE A F A IR C H IL D COMPATABLE C U R R E N T S I N K I N G L O G I C P R O D U C T


    OCR Scan     		PDF uL9109isa 0V/100 500kHz FD-111 diode 9109 DC FD-111 transistor U6A910959X w9109 9109 510SI fairchild micrologic ScansUX978

    f2141

    Abstract: SA-27 OP260SL OP260SLB
    Text: OPTEK TECHNOLOGY INC Ofc>E D I 000012a b 7 = Ì S S flQ Optoelectronics Division I T - m - i& TRW Electronic Components Group f f ? îr V Product Bulletin S066 January 1985 GaAIAs Plastic Infrared Emitting Diodes Types 0P260SL, OP26QSLC, QP260SLB, QP260SLA


    OCR Scan     		PDF 0P260SL, OP26QSLC, QP260SLB, QP260SLA -I65i Q25fl) f2141 SA-27 OP260SL OP260SLB

    SV3a

    Abstract: WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A
    Text: SHARP LZ21N3V/VS L Z 21N 3V /V S 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels DESCRIPTION PIN CONNECTIONS The LZ21N3V/VS are 1/2-type 8.08 mm solid- TOP VIEW 20 -P IN H A L F -P IT C H W D IP state image sensors that consist of PN photo­


    OCR Scan     		PDF LZ21N3V/VS LZ21N3V/VS SV3a WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A

    siemens igbt BSM 75 gb 100

    Abstract: GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls
    Text: SIEMENS IGBT Module BSM 75 GB 160 D 750gb16a doc VCE= 1600 V /c = 2* 100 A at r c = 25°C lc = 2* 75 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half bridge Type BSM 75 GB 160D


    OCR Scan     		PDF 750gb16a C67076-A2113-A2 20ki2 80fiC 75ltrg fl23SbGS 751tig 125SC aP35bOS S23SbOS siemens igbt BSM 75 gb 100 GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls

    sram 2112

    Abstract: 1N5817 M40Z111 M4Z28-BR00SH1 M4Z32-BR00SH1 MBRS120T3 SOH28
    Text: w - SCS-THOMSON M 40Z111 M 40Z111V k7 # . IM [MDiHI ènnMPM]D(§Ii NVRAM CONTROLLER for 1Mb or 4Mb LPSRAM PRELIM IN ARY DATA CONVERT LOW POWER SRAMs into NVRAMs PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE


    OCR Scan     		PDF M40Z111 M40Z111V M40Z111 M40Z111V: 28-LEAD sram 2112 1N5817 M4Z28-BR00SH1 M4Z32-BR00SH1 MBRS120T3 SOH28