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    onsemi MBRS120T3G

    DIODE SCHOTTKY 20V 1A SMB
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    DigiKey MBRS120T3G Digi-Reel 4,727 1
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    MBRS120T3G Cut Tape 4,727 1
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    onsemi MBRS120T3

    DIODE SCHOTTKY 20V 1A SMB
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    DigiKey MBRS120T3 Reel 2,500
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    Bristol Electronics MBRS120T3 6,988
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    Quest Components MBRS120T3 12,320
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    MBRS120T3 5,590
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    onsemi MBRS120T3H

    DIODE SCHOTTKY 20V 1A SMB
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    Motorola Semiconductor Products MBRS120T3

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    Bristol Electronics MBRS120T3 10,176
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    MBRS120T3 4,761
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    Quest Components MBRS120T3 93,877
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    MBRS120T3 3,580
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    MBRS120T3 3,021
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    MBRS120T3 1,808
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    ComSIT USA MBRS120T3 14,847
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    Chip 1 Exchange MBRS120T3 6,928
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    Motorola Mobility LLC MBRS120T3

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    Bristol Electronics MBRS120T3 4,475 14
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    MBRS120T3 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS120T3 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBRS120T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS120T3 Microsemi Schottky Rectifier Scan PDF
    MBRS120T3-D On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS120T3G On Semiconductor 1A 20V Schottky Rectifier Original PDF

    MBRS120T3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MAX232CSE

    Abstract: MBRS120T3 MC74HC00AD 01UF 2.1mm DC power jack connector MC7805ACT 2.1mm DC power jack 100UF C210 DSP56002
    Text: 2 1 POWER CONNECTOR J1 C22 0.01uF C21 0.01uF C25 0.01uF 24 GG NN DD U1 MC7805ACT 1 IN OUT C18 100UF 0.33uF 25V 35V C37 C26 0.1uF ARE TANTALUM OR MYLAR CHIPCAPS MBRS120T3 D1 MBRS120T3 D2 C34 0.1uF P1 IS 2.1mm Power Jack NOTE: C18,C19 MBRS120T3 D4 MBRS120T3


    Original
    MC7805ACT 100UF MBRS120T3 MC74HC00AD DSP56002 XC68HC705K1 AT29C256JC MAX232CSE MBRS120T3 MC74HC00AD 01UF 2.1mm DC power jack connector MC7805ACT 2.1mm DC power jack C210 DSP56002 PDF

    marking B12 diode SCHOTTKY

    Abstract: b12 marking MBRS120T3 B12 DIODE marking B12
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3 marking B12 diode SCHOTTKY b12 marking MBRS120T3 B12 DIODE marking B12 PDF

    marking B12 diode SCHOTTKY

    Abstract: MBRS120T3
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3 r14525 MBRS120T3/D marking B12 diode SCHOTTKY PDF

    marking B12 diode SCHOTTKY

    Abstract: MBRS120T3 diode marking code B12
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3 marking B12 diode SCHOTTKY MBRS120T3 diode marking code B12 PDF

    MBRS120T3

    Abstract: No abstract text available
    Text: MBRS120T3 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA 1.1 ± 0.3 4.8 ± 0.15 5.4 ± 0.15 Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation


    Original
    MBRS120T3 DO-214AA) MBRS120T3 PDF

    marking B12 diode SCHOTTKY

    Abstract: MBRS120T3 marking b12 rectifier diode B12
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3 Re120T3 marking B12 diode SCHOTTKY MBRS120T3 marking b12 rectifier diode B12 PDF

    MBRS120T3

    Abstract: No abstract text available
    Text: TH97/2478 www.eicsemi.com MBRS120T3 IATF 0113686 SGS TH07/1033 TH09/2479 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry


    Original
    TH97/2478 MBRS120T3 TH07/1033 TH09/2479 DO-214AA) MBRS120T3 PDF

    SBRS8120T3G

    Abstract: MBRS120T3G
    Text: MBRS120T3G, SBRS8120T3G Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3G, SBRS8120T3G MBRS120T3/D SBRS8120T3G MBRS120T3G PDF

    marking B12 diode SCHOTTKY

    Abstract: b12 marking MBRS120T3 DIODE B12 51 DIODE B12 B12 diode b12 diodes on semiconductor marking B12 diode
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3 r14525 MBRS120T3/D marking B12 diode SCHOTTKY b12 marking MBRS120T3 DIODE B12 51 DIODE B12 B12 diode b12 diodes on semiconductor marking B12 diode PDF

    MBRS120T3G

    Abstract: MBRS120T3 CASE 403A
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3 MBRS120T3/D MBRS120T3G MBRS120T3 CASE 403A PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS120T3G, SBRS8120T3G Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS120T3G, SBRS8120T3G MBRS120T3/D PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original
    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    44-PIN

    Abstract: M48T129V M48T129Y
    Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and


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    M48T129Y M48T129V 32-pin M48T129Y: M48T129V: 44-PIN M48T129V M48T129Y PDF

    M48T35Y

    Abstract: M48T35 SOH28
    Text: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original
    M48T35 M48T35Y 28-pin M48T35: M48T35Y: PCDIP28 M48T35Y M48T35 SOH28 PDF

    M48T59

    Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
    Text: M48T59 M48T59Y/M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION ■


    Original
    M48T59 M48T59Y/M48T59V* M48T59: M48T59Y: M48T59V* 28-pin M48T59 M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28 PDF

    M48T512V

    Abstract: M48T512Y
    Text: M48T512Y M48T512V* 5.0 or 3.3V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original
    M48T512Y M48T512V* 32-pin, M48T512Y: PMDIP32 M48T512V M48T512Y PDF

    M48T212V

    Abstract: M48T212Y M4TXX-BR12SH MTD20P06HDL SOH44
    Text: M48T212Y M48T212V 5.0V OR 3.3V TIMEKEEPER SUPERVISOR FEATURES SUMMARY • INTEGRATED REAL TIME CLOCK, POWERFAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ CONVERTS LOW POWER SRAM INTO NVRAMs ■ YEAR 2000 COMPLIANT 4-Digit Year ■ BATTERY LOW FLAG ■ MICROPROCESSOR POWER-ON RESET


    Original
    M48T212Y M48T212V M48T212Y: M48T212V: 44-LEAD 44-pin M48T212V M48T212Y M4TXX-BR12SH MTD20P06HDL SOH44 PDF

    M40Z300

    Abstract: M40Z300W M4ZXX-BR00SH SOH28
    Text: M40Z300 M40Z300W 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ CONVERTS LOW POWER SRAM INTO NVRAMs PRECISION POWER MONITORING AND POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE


    Original
    M40Z300 M40Z300W M40Z300: M40Z300W: M40Z300 M40Z300W M4ZXX-BR00SH SOH28 PDF

    schottky DIODE MOTOROLA B12

    Abstract: MBRS120T3 403A-01 LA 7555
    Text: MOTOROLA SC M O D E S / O P T O 5SE D Order this data sheet by MBRS120T3/D b 3 b 7555 D0fll2TG T MOTOROLA T-23-o S • S E M IC O N D U C T O R ■ ■ ■ TECHNICAL DATA M B R S1 2 0 T 3 M B R S1 3 0 T 3 M B R S1 4 0 T 3 Surface Mount Schottky Power Rectifiers


    OCR Scan
    MBRS120T3/D T-23-o BRS120T3 MBRS130T3 MBRS140T3 schottky DIODE MOTOROLA B12 MBRS120T3 403A-01 LA 7555 PDF

    MBRS120T3

    Abstract: MBRS14ot3 5817SMJ 5818SMJ 5819SMJ MBRS130T3 MBRS130TR MBRS140T3 SK12 SK13
    Text: 1 Amp Schottky Rectifiers 5817SMJ - 5819SMJ CATHODE BAND Dim. Inches Minimum A B C D E F G H J l-B -l Microsemi Catalog Number 5817SMJ SK12 MBRS120T3 SK13 MBRS130T3 MBRS130TR SK14 MBRS140T3 5818SMJ 5819SMJ -.035 .065 .205 .160 .130 .116 .089 .008 .020


    OCR Scan
    5817SMJ MBRS120T3 5818SMJ MBRS130T3 MBRS130TR 5819SMJ MBRS140T3 Characte200 5819SM MBRS120T3 MBRS14ot3 MBRS130T3 MBRS130TR MBRS140T3 SK12 SK13 PDF

    CMOS BATTERY HOLDER

    Abstract: M4Z32-BROOSH1 1N5817 AN1012 M40Z300 M40Z300W M4Z28-BR00SH1 M4Z32-BR00SH1 MBRS120T3
    Text: M40Z300 M40Z300W NVRAM CONTROLLER for up to EIGHT LPSRAM PRELIM IN ARY DATA CONVERT LOW POWER SRAMs into NVRAMs PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE TWO INPUT DECODER ALLOWS CONTROL


    OCR Scan
    M40Z300 M40Z300W M40Z300: M40Z300W: 28-LEAD M40Z300, M4Z32-BR00SH CMOS BATTERY HOLDER M4Z32-BROOSH1 1N5817 AN1012 M40Z300W M4Z28-BR00SH1 M4Z32-BR00SH1 MBRS120T3 PDF

    1N5817

    Abstract: M40Z111 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28
    Text: M 4 0 Z 111 M 4 0 Z 111V NVRAM CONTROLLER for up to TWO LPSRAM • CONVERT LOW POWER SRAMs into NVRAMs ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE ■ CHOICE of SUPPLY VOLTAGES and


    OCR Scan
    M40Z111 M40Z111V M40Z111: M40Z111V: 28-LEAD DES42 M40Z111, 1N5817 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28 PDF

    M48Z35

    Abstract: M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28
    Text: M48Z35 M48Z35Y, M48Z35V 256 Kbit 32Kb x 8 ZERO PO W ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES


    OCR Scan
    M48Z35 M48Z35Y, M48Z35V M48Z35: M48Z35Y: M48Z35V: 28-LEAD SOH28 PCDIP28 Fig11 M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28 PDF