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    FD-111 TRANSISTOR Search Results

    FD-111 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FD-111 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR2103 bldc driver

    Abstract: 60NF60 e bike motor controller Electric Bike microcontroller ARM circuit active brake mosfet switch BLDC Motor 75N75 TE 555-1 HT45B0C ADC 7815
    Text: Driving a BLDC Motor Using the HT45FM03B – C Language Driving a BLDC Motor Using the HT45FM03B – C Language D/N：HA0230E Introduction Brushless DC motors, which are controlled using electric commutation and PWM modulation, have the advantages of greater motor life by overcoming the problems associated with DC


    Original     		PDF HT45FM03B D/NHA0230E HT45FM03B IR2103 bldc driver 60NF60 e bike motor controller Electric Bike microcontroller ARM circuit active brake mosfet switch BLDC Motor 75N75 TE 555-1 HT45B0C ADC 7815

    IR2103 bldc driver

    Abstract: electric bike motor assembly language program for speed control e bike motor controller IC2 7805 active brake mosfet switch BLDC Motor HT45B0C assembly language program for speed control of dc brushless bike brushless dc motor speed control bike
    Text: Driving a BLDC Motor using the HT45FM03B Assembly Language Driving a BLDC Motor using the HT45FM03B (Assembly Language) D/N：HA0229E Introduction Brushless DC motors, in using electric commutation and PWM drive methods, greatly extend the life of electric motors, by overcoming problems derived from DC motor mechanical


    Original     		PDF HT45FM03B D/NHA0229E HT45FM03B IR2103 bldc driver electric bike motor assembly language program for speed control e bike motor controller IC2 7805 active brake mosfet switch BLDC Motor HT45B0C assembly language program for speed control of dc brushless bike brushless dc motor speed control bike

    thyristor tag 8422

    Abstract: ditty EPC-31 gpr 163 MIPS R4000 mmi2 thyristor handbook transistor mfsa 42 C790 D-10
    Text: TX System RISC TX79 Core Architecture Symmetric 2-way superscalar 64-bit CPU Rev. 2.0 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 64-bit thyristor tag 8422 ditty EPC-31 gpr 163 MIPS R4000 mmi2 thyristor handbook transistor mfsa 42 C790 D-10

    transistor f613

    Abstract: transistor bc 567
    Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


    Original     		PDF AO4604 AO4604 AO4604L -AO4604L 16789ABA2CDE9AFDC transistor f613 transistor bc 567

    UPD 552 C

    Abstract: LC1 D12 P7 XC2000 XC3000 XC4000 XC5200 XC5202 XC5204 XC5206 XC5210
    Text: XC5200 Field Programmable Gate Arrays  June 1, 1996 Version 4.0 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed


    Original     		PDF XC5200 PQ100 VQ100 XC5202 XC5204 XC5206 XC5210 XC5215 TQ144 PG156 UPD 552 C LC1 D12 P7 XC2000 XC3000 XC4000 XC5200 XC5202 XC5204 XC5206 XC5210

    LC1 D12 P7

    Abstract: XC2000 XC3000 XC4000 XC5200 XC5202 XC5204 XC5206 XC5210 XC5215
    Text: XC5200 Field Programmable Gate Arrays  August 6, 1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed


    Original     		PDF XC5200 PQ100 VQ100 XC5202 XC5204 XC5206 XC5210 XC5215 TQ144 PG156 LC1 D12 P7 XC2000 XC3000 XC4000 XC5200 XC5202 XC5204 XC5206 XC5210 XC5215

    D287A

    Abstract: SH120 Ga 81 SR118
    Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description Features The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. • LCD drive outputs: 120


    Original     		PDF HD66300T HD66300T D287A SH120 Ga 81 SR118

    hd61105

    Abstract: no2rg SR119 msf1 D113 D114 D115 D116 D117 D118
    Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R, G, B, and their inverted signals 5, * and %.


    Original     		PDF HD66300T HD66300T hd61105 no2rg SR119 msf1 D113 D114 D115 D116 D117 D118

    irf 560

    Abstract: Diode LT 58A 9410A
    Text: FAIRCHILD March 1997 M lC O N D U C T O R FDR9410A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF FDR9410A irf 560 Diode LT 58A 9410A

    1RFD110

    Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
    Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111

    IRFD110

    Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
    Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112

    Untitled

    Abstract: No abstract text available
    Text: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113

    acrian RF POWER TRANSISTOR

    Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664
    Text: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ |j |!|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to


    OCR Scan     		PDF TPR400 Pw-10 TPR400 Vcc-50 DD01D71 T-33-15 TPR400-3 06-6pf acrian RF POWER TRANSISTOR I3003 25CC TPR175 TPR400-2 transistor DF 50 we400 Scans-00115664

    jd 1803

    Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
    Text: The Class and Basic Ordering Units for Standard and Semi-standard Products T o m a k e it e a sier for th e cu sto m er to s e le c t th e ty p e o f product b est suited to specific applications, we offer transistors in three types. : an d 1 sta n d a rd ,


    OCR Scan     		PDF 2SA1774 2SA1821 2SA1885 2SC4617 2SC4618 2SC4619 2SC4649 2SC4725 2SC4726 2SC4997 jd 1803 otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10

    Untitled

    Abstract: No abstract text available
    Text: D EVELO PM EN T DATA PCD3360 T h is data sheet co n ta in s advance in fo rm a tio n and sp e cificatio n s are su b ject to change w ith o u t n otice. - A _ PROGRAMMABLE MULTI-TONE TELEPHONE RINGER G E N E R A L D ESC R IPTIO N The PCD3360 is a CMOS integrated circuit, designed to replace the electro-mechanical bell in telephone


    OCR Scan     		PDF PCD3360 PCD3360 PCDM360 BST72A

    Datenbuch

    Abstract: Raupenhaus hermsdorf VEB Halbleiterbauelemente thermistore Scans-048 Frankfurt Oder LB1201 DSAGER0002 Thermistor 15k
    Text: I I i n □ electronic Hinweis: Die Daten von Dioden und Transistoren aus dieser Unterlage sind bereits in anderen Datenbüchern des Raupenhauses enthalten. Deshalb wurde aus diesem Buch nur der Teil "Halbleiter-Widerstände" entnommen. Halbleiter-Bauelemente


    OCR Scan     		PDF

    K1HC

    Abstract: FVT6
    Text: HD66300T-Horizontal Driver for TFT-Type LCD Color TV PRELIMINARY D escription The HD66300T is a horizontal driver used for TFTtype Thin Film Transistor L C D color TVs. Specifi­ cally, it drives thedrainbussignalsofaTFT-type L C D panel. The HD66300T receives as input tjiree video signals R,


    OCR Scan     		PDF HD66300T------------Horizontal HD66300T HD66300T K1HC FVT6

    3904S

    Abstract: wi fi marking code transistor HK
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)


    OCR Scan     		PDF 3904S 100mA 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 3904S wi fi marking code transistor HK

    AH5E

    Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
    Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E


    OCR Scan     		PDF PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262

    fqmb

    Abstract: LD 25 V BUK793-60A philips ah 686
    Text: Philips Components Data sheet status P re lim in a ry s p e c ific a tio n date of issue PHILIPS March 1991 BUK793-60A PowerMOS transistor SensorFET INTERNATIONAL SbE ]> Li GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a


    OCR Scan     		PDF BUK793-60A 711Gfl5b 00MM747 BUK793-60A 711DflEb fqmb LD 25 V philips ah 686

    2SD1491

    Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236
    Text: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,


    OCR Scan     		PDF 2SD1491 PTlTa-25 2SD1491 S0426 14s6 RL-50 m1.0425 l0897 u236

    SV3a

    Abstract: WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A
    Text: SHARP LZ21N3V/VS L Z 21N 3V /V S 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels DESCRIPTION PIN CONNECTIONS The LZ21N3V/VS are 1/2-type 8.08 mm solid- TOP VIEW 20 -P IN H A L F -P IT C H W D IP state image sensors that consist of PN photo­


    OCR Scan     		PDF LZ21N3V/VS LZ21N3V/VS SV3a WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A

    xeh 250 120

    Abstract: T108 TC-6056 UUJK
    Text: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E


    OCR Scan     		PDF PWS10 xeh 250 120 T108 TC-6056 UUJK

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan     		PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor