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    IRFD112 Price and Stock

    Rochester Electronics LLC IRFD112

    SMALL SIGNAL N-CHANNEL MOSFET
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    Harris Semiconductor IRFD112

    IRFD112 - Small Signal, 0.8A, 100V, N-Channel, MOSFET '
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    Rochester Electronics IRFD112 1,371 1
    • 1 $0.3575
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    • 1000 $0.3039
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    IRFD112 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD112 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD112 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD112 General Electric Power MOSFET field effect power transistor. Scan PDF
    IRFD112 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD112 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD112 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD112 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD112 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD112 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD112 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD112(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD112R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD112R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD112R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFD112 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)800m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)6.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFD112

    IRFD110

    Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
    Text: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD110 IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    irf630 irf640

    Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
    Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший


    Original     		PDF 220AB 0RFP25N05 RFP50N05 RFP22N10 RFP40N10 IRFP450 IRFP460 IRFPG40 IRF9510 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF

    IRFD113

    Abstract: IRFD112 irfd113 transistor
    Text: Fünf RELD EFFECT POWER TRANSISTOR IRFD112,113 0.3 AMPERES 100, 60 VOLTS RDS ON = 0-8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		PDF IRFD112 TA-26Â 25jiS 100/iS IRFD112 IRFD113 IRFD113 irfd113 transistor

    IRFD110

    Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
    Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112

    Untitled

    Abstract: No abstract text available
    Text: W vys S IRFD110, IRFD111, IRFD112, IRFD113 S em icon du cto r y 7 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113

    transistor 81L

    Abstract: NER 251 IRFD112 IRFD113
    Text: SOLID !g e s o l i » STATE 01E 18902 state D 7 "“ 3 3 -_ 2 5 3fl7S0fll DDlfllGa 5 ^ _l— ' IRFD112,113 FIELD EFFECT POWER TRANSISTOR 0.8 AMPERES 100, 60 VOLTS Rd S ON = 0.8 n This series of N-Channel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology


    OCR Scan     		PDF T-35-J5 IRFD112 TA-25Â irf0112 -irfd113 RDS10N| transistor 81L NER 251 IRFD113

    irfd113

    Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
    Text: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFD110R, IRFD111R, IRFD112R, IRFD113R 0V-100V 92CS-42698 IRFD112R IRFD113R irfd113 IRFD110R IRFD111R IRFD111

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V


    OCR Scan     		PDF IRFD110, IRFD111, IRFD112, IRFD113

    1RFD110

    Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
    Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143

    MPF89

    Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max


    OCR Scan     		PDF IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9120 IRFD9121 IRFD9210 IRFD9213 IRFD91103 MPF89 MPF6659 2 watt fet MPF910 IRFD9110

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    IRF540R

    Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
    Text: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80


    OCR Scan     		PDF to-204 t0-205 t0-220 to-247 IRFD113R IRFD111R IRFD123R IRFD121R IRFF113R IRFF111R IRF540R IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40