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    Eaton Cutler-Hammer BFD11S (ALTERNATE: BFD11S)

    BFD 1NO-1NC | Eaton - Cutler Hammer BFD11S
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    RS BFD11S (ALTERNATE: BFD11S) Bulk 5 Weeks 1
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    FD11S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CB12000

    Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
    Text: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)


    Original     		PDF CB22000 CB12000 cd 4847 bt8c dc to ac inverter schematic ld3p FD11S FD3S BUT12 BUT18

    MB1700

    Abstract: E128 flip-flop
    Text: February 1990 Edition 1.1 - D A TA S H E E T E128H, E32, E128 Ultra High Performance ECL Gate Arrays DESCRIPTION T h e F u jitsu U ltra H ig h P e rfo rm a n c e E 128, E 32, a n d E 1 2 8 H E C L g a te a rra ys o ffe r th e h ig h e st spee d p e rfo rm a n c e a va ila b le fro m a n y F ujitsu array. G a te


    OCR Scan     		PDF E128H, E128H MB1700 E128 flip-flop

    FD31N

    Abstract: DRF20-S MB1700 mb160 FD11P ECL IC NAND
    Text: FUJ I TS U M I C R O E L E C T R O N I C S 374=i7b2 OOmSRM R E l FMI 31E S February 1990 Edition 1.1 FUJITSU DATA S H E E T • E128H, E32, E128 Ultra High Performance ECL Gate Arrays DESCRIPTION The Fujitsu Ultra High Performance E128, E32, and E128H ECL gate arrays


    OCR Scan     		PDF E128H, E128H 374T7L FD31N DRF20-S MB1700 mb160 FD11P ECL IC NAND

    FK26X7R1H

    Abstract: FK22Y5V1H FK11X7R1HOCXDD CX7R FK20Y5V1H fk33 FK26Y FK26Y5
    Text: Ceramic Capacitors MULTILAYER CERAM IC DIPPED RADIAL LEADED CAPACITORS FD AND FK TYPE, C L A SS I [50Vdc] AND C L A SS II [25, 50Vdc] FD11, FD23 F FK11, FK16 FK20, FK22, FK26 o Dimensions in mm [inches] Type Lmax. Wmax. T max. F ± 1 [.039] I FD11 3.5 [.138]


    OCR Scan     		PDF 50Vdc] FK16X7R1HOOOn FK16Y5V1HOOOZ FK20X7R1HOOOD FK20Y5V1H FK22X7R1HOCOD FK22Y5V1H FD23X7R1HOOOD FD23Y FK26X7R1H FK11X7R1HOCXDD CX7R fk33 FK26Y FK26Y5

    Untitled

    Abstract: No abstract text available
    Text: M T C -1 2 0 0 0 C M O S 1 .2 u Standard Cell Library Services CMOS Family Features • Technology: - 1.2 micron tw in -w ell CMOS process w ith polycide gates, double layer m etal, linear Ihin oxide capacitors and high ohmic resistors - Shrink capability to


    OCR Scan     		PDF BHDA08A BHAD12A BHSD14A