FDD047
Abstract: SA70
Text: Am29N323D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
|
Original
|
Am29N323D
FDD047
SA70
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am29BDS323D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29NS032J supersedes Am29BDS323D. Please refer to the S29NS-J family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes
|
Original
|
Am29BDS323D
S29NS032J
S29NS-J
23476B5
|
PDF
|
FDD047
Abstract: SA70
Text: Am29N323D Data Sheet Retired Product Am29N323D Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
|
Original
|
Am29N323D
FDD047
SA70
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
|
Original
|
Am29BDS323D
16-Bit)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
|
Original
|
Am29BDS323D
16-Bit)
|
PDF
|
S99-50111-001
Abstract: S29AL016D90tfa01 S29AL016D70TFI020E S29AL008D70TFI020 S29AL016D70TFI010H AM29LV040B-90JD S29AL016D70TFI010E AM29LV040B-70JF AM29LV010B-70ED AM29LV040B-70JD
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA October 10, 2008 Advanced Change Notification No: Subject: 2729 Obsolescence of the Discrete S29AL008D, S29AL016D, Am29LV010B, Am29LV002B, Am29LV200B, Am29LV004B, Am29LV040B, Am29LV081B,
|
Original
|
S29AL008D,
S29AL016D,
Am29LV010B
Am29LV002B
Am29LV200B
Am29LV004B
Am29LV040B
Am29LV081B
Am29LV008B
Am29DS163D
S99-50111-001
S29AL016D90tfa01
S29AL016D70TFI020E
S29AL008D70TFI020
S29AL016D70TFI010H
AM29LV040B-90JD
S29AL016D70TFI010E
AM29LV040B-70JF
AM29LV010B-70ED
AM29LV040B-70JD
|
PDF
|
FDD047
Abstract: SA70 SA71
Text: Am29BDS323D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
|
Original
|
Am29BDS323D
FDD047
SA70
SA71
|
PDF
|
FDD047
Abstract: SA70 SA71
Text: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
|
Original
|
Am29BDS323D
16-Bit)
FDD047
SA70
SA71
|
PDF
|
FDD047
Abstract: SA70 SA71
Text: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
|
Original
|
Am29BDS323D
16-Bit)
FDD047
SA70
SA71
|
PDF
|