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    onsemi FDD3N50NZTM

    MOSFET N-CH 500V 2.5A DPAK
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    Fairchild Semiconductor Corporation FDD3N50NZTM

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    FDD3N50NZTM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD3N50NZTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V DPAK Original PDF

    FDD3N50NZTM Datasheets Context Search

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    dpak mosfet

    Abstract: FDD3N50NZ
    Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


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    FDD3N50NZ FDD3N50NZ dpak mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FDD3N50NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Ω Features Description • RDS on = 2.1 Ω (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original
    FDD3N50NZ PDF

    FDD3N50NZTM

    Abstract: FDD3N50NZ
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5Ω Features Description • RDS on = 2.1Ω ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FDD3N50NZ FDD3N50NZTM FDD3N50NZ PDF

    N-Channel mosfet 500v 25A

    Abstract: FDD3N50NZTM dpak mosfet N-Channel mosfet 400v 25A
    Text: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FDD3N50NZ FDD3N50NZ N-Channel mosfet 500v 25A FDD3N50NZTM dpak mosfet N-Channel mosfet 400v 25A PDF