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    FDD5N50NZ Price and Stock

    onsemi FDD5N50NZTM

    MOSFET N-CH 500V 4A DPAK
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    DigiKey FDD5N50NZTM Cut Tape 3,083 1
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    FDD5N50NZTM Digi-Reel 3,083 1
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    FDD5N50NZTM Reel 2,500 2,500
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    Avnet Americas FDD5N50NZTM Reel 16 Weeks 2,500
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    Mouser Electronics FDD5N50NZTM 6,604
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    Arrow Electronics FDD5N50NZTM 7,500 16 Weeks 2,500
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    Newark FDD5N50NZTM Cut Tape 390 1
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    FDD5N50NZTM Reel 2,500
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    Onlinecomponents.com FDD5N50NZTM
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    Richardson RFPD FDD5N50NZTM 2,500
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    Avnet Asia FDD5N50NZTM 16 Weeks 2,500
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    Wuhan P&S FDD5N50NZTM 1,200 1
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    • 100 $0.67
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    onsemi FDD5N50NZFTM

    MOSFET N-CH 500V 3.7A DPAK
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    DigiKey FDD5N50NZFTM Reel
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    Arrow Electronics FDD5N50NZFTM 57,500 99 Weeks 1
    • 1 $0.514
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    Newark FDD5N50NZFTM Reel 2,500
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    Aptina Imaging FDD5N50NZFTM

    Trans MOSFET N-CH 500V 3.7A 3-Pin(2+Tab) DPAK T/R
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    Verical FDD5N50NZFTM 57,494 19
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    Fairchild Semiconductor Corporation FDD5N50NZTM

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    Bristol Electronics FDD5N50NZTM 1,701
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    Quest Components FDD5N50NZTM 1,360
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    Others FDD5N50NZFTM

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    ComSIT USA FDD5N50NZFTM 10,000
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    Chip 1 Exchange FDD5N50NZFTM 5,291
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    FDD5N50NZ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD5N50NZFTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V DPAK Original PDF
    FDD5N50NZTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V DPAK Original PDF

    FDD5N50NZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mosfet application note fairchild

    Abstract: No abstract text available
    Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5  Features Description • RDS on = 1.38  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the


    Original     		PDF FDD5N50NZ FDD5N50NZ Mosfet application note fairchild

    mosfet 500v 4A

    Abstract: Mosfet application note fairchild FDD5N50NZTM
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZ FDD5N50NZ mosfet 500v 4A Mosfet application note fairchild FDD5N50NZTM

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75 Ω Features Description • RDS on = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDD5N50NZF 100nsec

    ultra fast recovery diode

    Abstract: No abstract text available
    Text: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75  Features Description • RDS on = 1.47  (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDD5N50NZF FDD5N50NZF ultra fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD5N50NZF

    FDD5N50NZTM

    Abstract: FDD5N50NZ
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS on = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZ FDD5N50NZTM FDD5N50NZ

    fdd5n50nzftm

    Abstract: FDD5N50NZF
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZF fdd5n50nzftm FDD5N50NZF

    dpak mosfet

    Abstract: fairchild make f 32 diode
    Text: UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS on = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZF FDD5N50NZF dpak mosfet fairchild make f 32 diode

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Ω Features Description • RDS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		PDF FDD5N50NZ