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    onsemi FDD8N50NZTM

    MOSFET N-CH 500V 6.5A DPAK
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    FDD8N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD8N50NZTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 6.5A DPAK Original PDF

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    FDD8N50NZTM

    Abstract: No abstract text available
    Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 mΩ Features Description • RDS on = 770 mΩ (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		PDF FDD8N50NZ FDD8N50NZTM

    FDD8N50

    Abstract: No abstract text available
    Text: UniFET-II FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDD8N50NZ FDD8N50NZ FDD8N50

    FDD8N50

    Abstract: FDD8N50NZ
    Text: UniFET-II FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDD8N50NZ FDD8N50 FDD8N50NZ

    FDD8N50NZ

    Abstract: FDD8N50 FDD8N50NZTM
    Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and


    Original     		PDF FDD8N50NZ FDD8N50NZ FDD8N50 FDD8N50NZTM