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    FDMC8622 Search Results

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    FDMC8622 Price and Stock

    onsemi FDMC8622

    MOSFET N-CH 100V 4A/16A 8MLP
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    DigiKey FDMC8622 Digi-Reel 20,550 1
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    FDMC8622 Cut Tape 20,550 1
    • 1 $2.12
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    FDMC8622 Reel 18,000 3,000
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    Avnet Americas FDMC8622 Reel 13 Weeks 3,000
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    Mouser Electronics FDMC8622 19,184
    • 1 $1.51
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    Newark FDMC8622 Cut Tape 3,550 1
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    FDMC8622 Reel 3,000
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    Onlinecomponents.com FDMC8622
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    Rochester Electronics FDMC8622 3,283 1
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    TME FDMC8622 1
    • 1 $1.13
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    Richardson RFPD FDMC8622 3,000
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    Avnet Asia FDMC8622 13 Weeks 3,000
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    Avnet Silica FDMC8622 14 Weeks 3,000
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    Chip One Stop FDMC8622 Cut Tape 2,990
    • 1 $1.2
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    EBV Elektronik FDMC8622 15 Weeks 3,000
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    onsemi FDMC8622-L701

    FDMC8622-L701
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    DigiKey FDMC8622-L701 Bulk
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    Fairchild Semiconductor Corporation FDMC8622

    MOSFET N-CH 100V 4A POWER33
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    Win Source Electronics FDMC8622 38,180
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    • 100 $1.101
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    FDMC8622 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC8622 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4A POWER33 Original PDF

    FDMC8622 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDMC8622

    Abstract: C3731
    Text: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 C3731 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description ̈ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMC8622 PDF

    FDMC8622

    Abstract: No abstract text available
    Text: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m: Features General Description „ Max rDS on = 56 m: at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 PDF

    FDMC8622

    Abstract: No abstract text available
    Text: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 25ons PDF

    Untitled

    Abstract: No abstract text available
    Text: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,


    Original     		WP014 PDF