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    FDMC86324 Search Results

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    FDMC86324 Price and Stock

    onsemi FDMC86324

    MOSFET N-CH 80V 7A/20A POWER33
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    DigiKey FDMC86324 Cut Tape 3,555 1
    • 1 $2.14
    • 10 $1.368
    • 100 $2.14
    • 1000 $0.68042
    • 10000 $0.68042
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    FDMC86324 Reel 3,000
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    • 100 -
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    • 10000 $0.5995
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    Avnet Americas FDMC86324 Reel 13 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.57792
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    Mouser Electronics FDMC86324 8,360
    • 1 $1.54
    • 10 $1.11
    • 100 $0.821
    • 1000 $0.626
    • 10000 $0.599
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    Newark FDMC86324 Reel 3,000
    • 1 -
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    • 10000 $0.72
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    Future Electronics FDMC86324 Reel 38 Weeks 3,000
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    • 10000 $0.565
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    Onlinecomponents.com FDMC86324
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    • 1000 $1.247
    • 10000 $0.595
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    Rochester Electronics FDMC86324 2,543 1
    • 1 $0.6661
    • 10 $0.6661
    • 100 $0.6261
    • 1000 $0.5662
    • 10000 $0.5662
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    TME FDMC86324 1
    • 1 $1.2
    • 10 $1.09
    • 100 $0.86
    • 1000 $0.8
    • 10000 $0.8
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    Richardson RFPD FDMC86324 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.6
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    Avnet Asia FDMC86324 13 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.61487
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    Avnet Silica FDMC86324 14 Weeks 3,000
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    EBV Elektronik FDMC86324 15 Weeks 3,000
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    FDMC86324 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC86324 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 20A POWER33 Original PDF

    FDMC86324 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDMC86324

    Abstract: V1318
    Text: FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86324 FDMC86324 V1318 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86324 PDF

    wurth 744

    Abstract: ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40
    Text: Maxim > Design support > App notes > Basestations/Wireless Infrastructure > APP 5043 Maxim > Design support > App notes > Hot-Swap and Power Switching Circuits > APP 5043 Maxim > Design support > App notes > Power-Supply Circuits > APP 5043 Keywords: powered device, PD, Power over Ethernet, PoE, IEEE 802.3af, IEEE 802.3at, Class 2 PD, Class 3 PD, IP phones, IP


    Original     		com/an5043 AN5043, APP5043, Appnote5043, wurth 744 ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40 PDF