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    FDME910 Search Results

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    FDME910 Price and Stock

    onsemi FDME910PZT

    MOSFET P-CH 20V 8A MICROFET
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    DigiKey FDME910PZT Reel
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    Rochester Electronics FDME910PZT 586 1
    • 1 $0.2994
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    • 100 $0.2814
    • 1000 $0.2545
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    TME FDME910PZT 1
    • 1 $0.748
    • 10 $0.457
    • 100 $0.364
    • 1000 $0.333
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    Flip Electronics FDME910PZT 7,245
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    Flip Electronics FDME910PZT

    MOSFET P-CH 20V 8A MICROFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDME910PZT Reel 2,872
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    Flip Electronics FDME910PZT-P

    P-CHANNEL 20 V 8A (TA) 2.1W (TA)
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    DigiKey FDME910PZT-P Bulk 4,373
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    onsemi FDME910PZT-P

    Transistor MOSFET P-CH 20V 8A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDME910PZT-P)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FDME910PZT-P Reel 0 Weeks, 2 Days 2,500
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    Rochester Electronics FDME910PZT-P 169,442 1
    • 1 $0.2778
    • 10 $0.2778
    • 100 $0.2611
    • 1000 $0.2361
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    Flip Electronics FDME910PZT-P 4,373
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    onsemi FDME910PZT-P-Q

    P-CH. ER TRENCH MOSFET (Alt: FDME910PZT-P-Q)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia FDME910PZT-P-Q 33 Weeks 5,000
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    FDME910 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDME910PZT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P CH 20V 8A MICROFET Original PDF

    FDME910 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDME910

    Abstract: B175 FDME910PZT
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original     		FDME910PZT FDME910PZT FDME910 B175 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original     		FDME910PZT PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.


    Original     		FDME910PZT FDME910PZT PDF

    Untitled

    Abstract: No abstract text available
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original     		FDME910PZT PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TA4-EA-06224 Revision. 1 Product Standards AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant


    Original     		TA4-EA-06224 AN32258A 48easures PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Standards Tentative Ver.1.11 AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant


    Original     		AN32258A PDF