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    FDP054N10 Search Results

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    FDP054N10 Price and Stock

    onsemi FDP054N10

    MOSFET N-CH 100V 120A TO220-3
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    DigiKey FDP054N10 Tube 676 1
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    Avnet Americas FDP054N10 Tube 17 Weeks 1,000
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    Mouser Electronics FDP054N10 1,036
    • 1 $5.06
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    Newark FDP054N10 Bulk 1,000
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    Future Electronics FDP054N10 Tube 17 Weeks 1,000
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    Onlinecomponents.com FDP054N10
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    Rochester Electronics FDP054N10 222 1
    • 1 $2.81
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    • 100 $2.64
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    Richardson RFPD FDP054N10 1,000
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    Avnet Silica FDP054N10 18 Weeks 50
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    EBV Elektronik FDP054N10 19 Weeks 50
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    Wuhan P&S FDP054N10 800 1
    • 1 $6.72
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    • 100 $4.29
    • 1000 $3.26
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    Fairchild Semiconductor Corporation FDP054N10

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    Bristol Electronics FDP054N10 392
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    Quest Components FDP054N10 313
    • 1 $4.176
    • 10 $4.176
    • 100 $2.5752
    • 1000 $2.5752
    • 10000 $2.5752
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    FDP054N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP054N10 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-220AB-3 Original PDF

    FDP054N10 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDP054N10

    Untitled

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDP054N10 O-220

    FDP054N10

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while


    Original     		PDF FDP054N10 FDP054N10

    FDP054N10

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP054N10 O-220 FDP054N10

    FDP054N10

    Abstract: MOSFET 100V
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP054N10 O-220 FDP054N10 MOSFET 100V

    fdp054n10

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP054N10 FDP054N10 O-220

    MOSFET 100V

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mW Features Description • RDS on = 4.6mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP054N10 FDP054N10 O-220 MOSFET 100V