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onsemi FDP120N10 MOSFET N-CH 100V 74A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP120N10	Tube	226		1	1 $3.2 10 $3.2 100 $3.2 1000 $1.08931 10000 $1.043	Buy Now
Avnet Americas	FDP120N10	Tube		13 Weeks	800	1 - 10 - 100 - 1000 $1.01756 10000 $0.98165	Buy Now
Mouser Electronics	FDP120N10		502			1 $2.9 10 $1.52 100 $1.36 1000 $1.2 10000 $1.2	Buy Now
Newark	FDP120N10	Bulk			800	1 - 10 - 100 - 1000 $1.39 10000 $1.09	Buy Now
Onlinecomponents.com	FDP120N10					1 - 10 - 100 - 1000 $1.14 10000 $1.14	Buy Now

Rochester Electronics	FDP120N10		848		1	1 $1.16 10 $1.16 100 $1.09 1000 $0.986 10000 $0.986	Buy Now
Richardson RFPD	FDP120N10				800	1 - 10 - 100 - 1000 $1.04 10000 $1.04	Buy Now
Avnet Silica	FDP120N10			14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDP120N10		200	15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	FDP120N10		150		1	1 - 10 - 100 $4.38 1000 $4.05 10000 $4.05	Buy Now
onsemi FDP12N50NZ MOSFET N-CH 500V 11.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP12N50NZ	Tube	1		1	1 $2.09 10 $2.09 100 $2.09 1000 $2.09 10000 $2.09	Buy Now
	FDP12N50NZ	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	FDP12N50NZ	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FDP12N50 MOSFET N-CH 500V 11.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP12N50	Tube			1,000	1 - 10 - 100 - 1000 $0.96687 10000 $0.96687	Buy Now
Rochester Electronics	FDP12N50		672		1	1 $1.02 10 $1.02 100 $0.9588 1000 $0.867 10000 $0.867	Buy Now
onsemi FDP12N60NZ MOSFET N-CH 600V 12A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP12N60NZ	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FDP12N60NZ	Tube		0 Weeks, 2 Days	106	1 - 10 - 100 - 1000 $5.45977 10000 $5.27778	Buy Now
Flip Electronics	FDP12N60NZ		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components CM1F-D-P-12V RELAY AUTOMOTIVE SPDT 35A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CM1F-D-P-12V	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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FDP12 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
FDP120AN15A0	Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 14A TO-220AB	Original	PDF
FDP120AN15A0	Fairchild Semiconductor		Original	PDF
FDP120N10	Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 74A TO-220	Original	PDF
FDP12N35	Fairchild Semiconductor	350V N-Channel MOSFET	Original	PDF
FDP12N50	Fairchild Semiconductor	N-Channel MOSFET 500V, 11.5A, 0.65 Ohm	Original	PDF
FDP12N50F	Fairchild Semiconductor	N-Channel MOSFET 500V, 11.5A, 0.7 Ohm	Original	PDF
FDP12N50NZ	Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220	Original	PDF
FDP12N60NZ	Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO-220	Original	PDF

FDP12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FDPF12N50T Abstract: FDP12N50 Text: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP12N50 FDPF12N50T FDPF12N50T	PDF
Untitled Abstract: No abstract text available Text: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDP12N50F FDPF12N50F FDPF12N50F	PDF
Untitled Abstract: No abstract text available Text: WAVEGUIDE DUMMY LOAD Waveguide Low Power Load P/N Freq. Range GHz Waveguide Power Handling (W) VSWR Flange Material 975LPLW 0.75-1.12 WR975 2 1.05 FDP9/FDM9 Al 770LPLW 0.96-1.45 WR770 2 1.05 FDP12/FDM12 Al 650LPLW 1.12-1.70 WR650 2 1.05 FDP14/FDM14 Al 510LPLW	Original	975LPLW WR975 770LPLW WR770 FDP12/FDM12 650LPLW WR650 FDP14/FDM14 510LPLW WR510	PDF
FDPF*12n50ut Abstract: FDPF12N50UT Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut	PDF
Untitled Abstract: No abstract text available Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDP12N50U FDPF12N50UT	PDF
Untitled Abstract: No abstract text available Text: UniFET-IITM FDP12N50NZ / FDPF12N50NZ tm N-Channel MOSFET 500V, 11.5A, 0.52 Features Description • RDS on = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N- Channel enhancement mode power field ef fect transistors are pr oduced using Fa irchild’s pr oprietary, planar	Original	FDP12N50NZ FDPF12N50NZ FDPF12N50NZ	PDF
Untitled Abstract: No abstract text available Text: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10	PDF
fdp12n50nz Abstract: fdpf12n50nz Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and	Original	FDP12N50NZ FDPF12N50NZ FDPF12N50NZ	PDF
fdpf12n60 Abstract: FDP12N60NZ Text: UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET 600V, 12A, 0.65 Features Description • RDS on = 0.53 ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 26nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDP12N60NZ FDPF12N60NZ fdpf12n60	PDF
FDP120N10 Abstract: No abstract text available Text: FDP120N10 N-Channel PowerTrench 100V, 74A, 12mΩ tm MOSFET Features Description • RDS on = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP120N10 O-220 FDP120N10	PDF
350v mosfet nchannel Abstract: FDP12N35 FDPF12N35 Text: UniFET TM FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 12A, 350V, RDS on = 0.38Ω @VGS = 10 V	Original	FDP12N35 FDPF12N35 O-220 FDPF12N35 350v mosfet nchannel	PDF
FDPF12N50NZ Abstract: FDP12N50NZ Text: UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS on = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP12N50NZ FDPF12N50NZ FDPF12N50NZ	PDF
Untitled Abstract: No abstract text available Text: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDP12N50F FDPF12N50FT FDPF12N50FT	PDF
Untitled Abstract: No abstract text available Text: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP12N50 FDPF12N50T	PDF

Untitled Abstract: No abstract text available Text: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10	PDF
FDPF12N60NZ Abstract: fdpf12n60 FDP12N60NZ FDP12N60 12a650 Text: FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features Description • RDS on = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and	Original	FDP12N60NZ FDPF12N60NZ FDPF12N60NZ fdpf12n60 FDP12N60 12a650	PDF
FDP120N10 Abstract: No abstract text available Text: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10 FDP120N10	PDF
Untitled Abstract: No abstract text available Text: UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS on = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A • Low gate charge ( Typ. 23nC ) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP12N50NZ FDPF12N50NZ	PDF
Untitled Abstract: No abstract text available Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS	Original	FDP12N50NZ FDPF12N50NZ	PDF
Untitled Abstract: No abstract text available Text: STRAIGHT WAVEGUIDE 0. 75GH z – 100GH z 975STW-500 Freq. Range GHz 0.75-1.12 770STW-500 0.96-1.45 WR770 1.05 500 FDP12/ FDM12 Al Al 650STW-500 1.12-1.70 WR650 1.05 500 FDP14/ FDM14 Al 510STW-500 1.45-2.20 WR510 1.05 500 FDP18/ FDM18 Al 430STW-500 1.70-2.60	Original	100GH 975STW-500 770STW-500 WR770 FDP12/ FDM12 650STW-500 WR650 FDP14/ FDM14	PDF
Untitled Abstract: No abstract text available Text: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP120N10	PDF
Untitled Abstract: No abstract text available Text: FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features Description • RDS on = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.	Original	FDP12N50 FDPF12N50T	PDF
Untitled Abstract: No abstract text available Text: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDP12N50F FDPF12N50FT FDPF12N50FT	PDF
FDP120AN15A0 Abstract: FDD120AN15A0 marking 2E9 marking m062 Text: FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench MOSFET 150V, 14A, 120mΩ Features Applications • r DS ON = 101mΩ (Typ.), VGS = 10V, ID = 4A • DC/DC Converters and Off-line UPS • Qg(tot) = 11.2nC (Typ.), V GS = 10V • Distributed Power Architectures and VRMs	Original	FDP120AN15A0 FDD120AN15A0 O-252AA FDD120AN15A0 marking 2E9 marking m062	PDF

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Panasonic Electronic Components CM1F-D-P-12V

FDP12 Datasheets (8)

FDP12 Datasheets Context Search

FDPF12N50T

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FDPF*12n50ut

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fdp12n50nz

fdpf12n60

FDP120N10

350v mosfet nchannel

FDPF12N50NZ

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FDPF12N60NZ

FDP120N10

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FDP120AN15A0