FDPF*12n50ut
Abstract: FDPF12N50UT
Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
|
Original
|
FDP12N50U
FDPF12N50UT
FDPF12N50UT
FDPF*12n50ut
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
|
Original
|
FDP12N50U
FDPF12N50UT
|
PDF
|
FDPF*12n50ut
Abstract: FDPF12N50UT FDP12N50U FDP12N50
Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
|
Original
|
FDP12N50U
FDPF12N50UT
FDPF12N50UT
FDPF*12n50ut
FDP12N50
|
PDF
|
FDPF*12n50ut
Abstract: fdpf12n50ut mosfet 10a 500v FDP12N50U
Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
|
Original
|
FDP12N50U
FDPF12N50UT
FDPF12N50UT
FDPF*12n50ut
mosfet 10a 500v
|
PDF
|