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    Abstract: No abstract text available
    Text: UniFETTM FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34Ω Features Description • RDS on = 0.29Ω ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP17N60N FDPF17N60NT

    FDPF17N60NT

    Abstract: n-CHANNEL POWER MOSFET 600v
    Text: UniFETTM FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34Ω Features Description • RDS on = 0.29Ω ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP17N60N FDPF17N60NT FDPF17N60NT n-CHANNEL POWER MOSFET 600v