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    FDD6N20

    Abstract: FDD6N20TF FDD6N20TM FDU6N20 fdu6n20tu
    Text: UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N20 FDU6N20 FDU6N20 FDD6N20TF FDD6N20TM fdu6n20tu

    N mosfet 100v 200A

    Abstract: FDD6N20 FDD6N20TF FDD6N20TM FDU6N20
    Text: UniFETTM FDD6N20TM tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N20TM FDD6N20TM FDD6N20 FDU6N20 N mosfet 100v 200A FDD6N20TF

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N20 FDU6N20 FDU6N20