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MTP10N15 Abstract: 221A-06 25CC AN569 Text: MO T O R O L A SC XSTRS/R F bôE D fe3b7254 GG'ifl72ti IT T MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r IU-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed fo r medium voltage, high	OCR Scan	fe3b7254 MTP10N15 C085-Crss MTP10N15 221A-06 25CC AN569	PDF

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MTP10N15

Abstract: 221A-06 25CC AN569
Text: MO T O R O L A SC XSTRS/R F bôE D fe3b7254 GG'ifl72ti IT T MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r IU-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed fo r medium voltage, high

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fe3b7254 MTP10N15 C085-Crss MTP10N15 221A-06 25CC AN569

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