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    FERRANTI ZVN Search Results

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    IRF0120

    Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)


    Original     		IXTH67N08 IXTM67N08 IXTH75N08 IXTM75N08 MTE75N08 VN0109N9 BS170F VN0109N3 VN0109N2 IRF0120 VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604 PDF

    Ferranti

    Abstract: 4070 CMOS analogue ohmmeter circuit diagram digital ic cd 4066 1N4141 cmos 4070 Ferranti Semiconductors 10k multiturn preset simple SL 100 NPN Transistor ZN451
    Text: ! 4 FERRANTI semiconductors ZN451E/CJ ADVANCE PRODUCT INFO RM ATIO N 3% Digit D V M IC with External Auto-Zero FEATURES • External circuits may be included in the auto zero loop • FuR-scale reading 1 -999m V or lower. • Measures sum or difference of tw o inputs


    OCR Scan     		ZN451E/CJ -999mV ZN451 ZN451E ZN451CJ Ferranti 4070 CMOS analogue ohmmeter circuit diagram digital ic cd 4066 1N4141 cmos 4070 Ferranti Semiconductors 10k multiturn preset simple SL 100 NPN Transistor PDF

    FXT2907ASM

    Abstract: FXT3866 ZVN4206 FXT2222ASM FXT54SM fmmt3904TA ferranti mosfets
    Text: ZETEX SEMICON DUCTORS 2 03E D • ^70578 000b7fib 1 ■ Z E T B ; CENTRE COLLECTOR E-LINE^i’lWT The Ferranti E-line range is now available with a centre collector surface mount outline making it suitable as a replacement for SOT-89 devices. The range has been extended to include popular SOT-89 specifications,


    OCR Scan     		000b7fib OT-89 i7D57fl 00Gb707 107S2/i_ BAV99TA) BAV99TC) FXT2907ASM FXT3866 ZVN4206 FXT2222ASM FXT54SM fmmt3904TA ferranti mosfets PDF

    FERRANTI

    Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
    Text: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20


    OCR Scan     		IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5VM2110L ZVN2120A FERRANTI VN10LP ZVNO12 ZVN2106 ZVN2106A ZVN0120A PDF

    ferranti

    Abstract: ZVN2210L ZVN3306B ZVN3310B ZVH2224B ZVN2220L ZVN2224L ZVN2535B ZVN3206L ZVN3210L
    Text: - 246 - f §y s tt € A X t Vos or i Vdg * V Vg s (V) Ig s s Id Pi> * /CH * /CH (A) m M $ ÎS (Ta=25^) Vg s (V) Vd s (V) ( M A) (V) (V) («A) Ciss g fs Coss Crss & & m n V g s -0 (max) *typ V g s (V) (0 ) D (Ta=25tC) lo(on) FDs(on) Vd s = Vg s max min (nA)


    OCR Scan     		ZVN2210L O-220 ZVN2220L ZVP012O8 ZVP0120L ZVP0535A ZVP0535B ZVP0535L ferranti ZVN3306B ZVN3310B ZVH2224B ZVN2224L ZVN2535B ZVN3206L ZVN3210L PDF

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


    OCR Scan     		IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022 PDF

    ZVN0106A

    Abstract: ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B
    Text: « » W ¡2 » « EH a > o ® > 8 9 P18 ! ZVN3206L 14A, 0.150 8 I I i ! ZVN3306A I0S17O VN'OLI 0.27A, 50 ZVN1306A 0.2A, 100 8 ZVP0108B 0.6A, 80 ZVP1308B 0.25A, 200 ZVP0108A 0.23A. 8 0 ZVP1308A 0.14A, 200 ZVN0108L 1.5A, 4 0 ZVN1308B 0.5A. 100 ZVP2208B 1.5A, 1 6 0


    OCR Scan     		ITO-92 T0-220 T0-220 ZVN3202L ZVN3202M ZVP3202L* ZVP3202M* ZVN3102B ZVN3102L ZVN3102M ZVN0106A ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B PDF

    ZVNL535

    Abstract: No abstract text available
    Text: ”t 5 PLESSEY SENI C ON D/ DI SCR ET E 7220533 PLESSEY I>E~Jj 7 5 5 0 5 3 3 SEMICOND/DISCRETE O O D S S 'H 95D 0 559 9 T -3 S -Z 5 N-channel enhancement mode vertical D M O S FET ZVN L535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


    OCR Scan     		L535A 100mA 300fts. G-102 ZVNL535 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SE MI CO ND /D I SCR ET E 7220533 PLESSEY ~TS DE I 7 5 5 0 5 3 3 0 D D S 7 4 7 SE M IC O N D / D IS C RE TE 95D 05747 T - 3 S - 2 S N-channel enhancement mode vertical DMOS FET ZVN4206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


    OCR Scan     		ZVN4206 ZVN4206A 300fts. G-250 PDF

    L50Q

    Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
    Text: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50


    OCR Scan     		OT-23, ZVP3210M" ZVP2210M zvn3210m zvn3210l L50Q ZVN1320B ZVN2210L zvn311 ZVP3210M PDF

    1A 400v scr to220

    Abstract: No abstract text available
    Text: PLESSEY SEfllCOIMD/DISCRETE 7220533 PLESSEY TS SEMICOND/ D I S C R E T E N-channel enhancement­ mode vertical DMOS FET dF | 75SQ S33 QOOSbBB 95D 05 63 3 T '3 S 'Z S ZVN0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


    OCR Scan     		ZVN0540 ZVN0540A* ZVN0540B ZVN0540L 100mA, 100mA 300/xs. G-136 1A 400v scr to220 PDF

    ZVN0545

    Abstract: ZVN0545L
    Text: ^5 PLESSEY SEtlICOND/DISCRETE 7220533 PLESSEY SEMICOND/ D I S C R E T E N-channel enhancement­ mode vertical DMOS FET DE~| 7520533 0005b3S □ | ~ 95D 05635 T ' 3 s5 ZVN0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


    OCR Scan     		0005b3S ZVN0545 ZVN0545A* ZVN0545B ZVN0545L 100mA, 100mA G-138 ZVN0545 PDF

    ZVN2106AM

    Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
    Text: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements


    OCR Scan     		VNL120AM 7220S33 ZVN2106AM ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M PDF

    plessey

    Abstract: zvn1409 G146
    Text: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •


    OCR Scan     		7520S33 QDG5L37 ZVN1409 G-142 7EB0S33 0DDSL41 G-143 7SSDS33 00DSb45 plessey zvn1409 G146 PDF

    ZVN2206B

    Abstract: E195D plessey g-1
    Text: PLESSEY SE MICON D/ DI SC RE TE 7220533 PLESSEY TS DE I 7S E 0 S 33 DDGSbb^ 95D 05 6 6 9 SEMICOND/DISCRETE - [“ ^ N-channel enhancement mode vertical DMOS FET 3 ^ 7 ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


    OCR Scan     		ZVN2206 ZVN2206B* ZVN2206L DQ0Sb72 G-174 7S2D533 0005b73 G-175 ZVN2206B E195D plessey g-1 PDF

    ZVN2120

    Abstract: ZVN2120B
    Text: plessey s e n i c o n d /d i s c r e t e 7220533 "t5 PLESSEY SEMICOND/DI SCRETE d F | ? 22GS33 □□□Sbbl □ 95D 0 5 6 6 1 T- N-channel enhancement mode vertical DMOS FET 3J-o? ZVN2120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		22GS33 ZVN2120 G-166 0005bL G-167 22D533 G-168 ZVN2120 ZVN2120B PDF

    g191

    Abstract: No abstract text available
    Text: PLESSEY SEflICOND/DISCRETE 7220533 PLESSEY SEM ICO ND/DI SCRETE M T | ? 2 a D 5 3 3 DQGSbflS 3 T " 95D 05 6 8 5 D T N-channel enhancement mode vertical DMOS FET - 3 ° l'O J ZVN2220 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		ZVN2220 ZVN2220B ZVN2220L G-190 G-191 722G533 G-192 g191 PDF

    N-0120

    Abstract: N0120
    Text: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE DE 1 7 5 2 D 5 3 3 D D D S t m 95D 0 5 6 0 9 T - 3 ^ .^ 5 - N-channel enhancement­ mode vertical D M O S FET ZVN 0120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		G-115 722DS33 00G5bl4 G-116 75EG533 G-117 7220S33 G-118 N-0120 N0120 PDF

    ZVN2210A

    Abstract: ZVN2210L ZVN2210 ZVN2210B G179
    Text: PLESSEY S E M I C O N D / D I S C R E T E T 5 De 1 ? E 5 D S 3 3 7220533 PLES SE Y S E M IC ON D/ DI SCR E TE N-channel enhancement mode vertical DMOS FET DOOSt,? 95D 05677 4 D ZVN2210 i ! FEAT U RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		ZVN2210 ZVN2210B* ZVN2210L G-182 5SDS33 G-183 17EEDS33 ZVN2210A ZVN2210 ZVN2210B G179 PDF

    ZVNL120

    Abstract: No abstract text available
    Text: PLESSEY s e u i c o n d /d i s c r e t e ]>F|7220S33 DODSSTl S | ~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05591 T - '3 5 '- '2 N-channel enhancement mode vertical DMOS FET S' ZVNL120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		7220S33 ZVNL120 9/ZVNL120A/08/86 125mA 10/ZVNL120A/08/86 755D533 G-100 ZVNL120 PDF

    n2106

    Abstract: vn2106 ZVN2106 Ferranti zvn
    Text: PLESSEY SEMICOND/DISCRETE DE~|? 5 5 DS 33 GOOSbMS a f ” 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 95D 05645 T" 3 1 - 0 ? N-channel enhancement mode vertical DMOS FET ZVN 2106 FEATURES • Compact geometry • Fast switching speeds •


    OCR Scan     		G-151 G-153 G-154 n2106 vn2106 ZVN2106 Ferranti zvn PDF

    ZVN2120

    Abstract: No abstract text available
    Text: R5D ZETEX S E M I C O N D U C T O R S T CI70S70 O D D S b b l J> =i • ZETB 95D 0 5 6 6 1 T - 3 ? -o ? N-channel enhancement mode vertical DMOS FET ZVN2120 FEATURES Compact geometry Fast switching speeds No secondary breakdown Excellent temperature stability


    OCR Scan     		I70S70 ZVN2120 ZVN2120A ZVN2120B ZVN2120L 200VON O-220 ZVN2120 PDF

    5D diode

    Abstract: ZVN3310 00573E D7950 sw S O T-3 2 3
    Text: PLESSEY SEHICOND/DISCRETE TS 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /DI S C R E T E DE 1 7 2 5 G 533 □□□S 7 3 S 3 | 9S D 0 5 7 3 5 T '3 S - i5 ZVN 3310 N-channel enhancement mode vertical D M O S FET FEATURES • Com pact geometry • Fast sw itching speeds


    OCR Scan     		752DS33 0DG573fl G-240 00573e G-241 ZVN3310 G-242 G-243 000574E 5D diode ZVN3310 00573E D7950 sw S O T-3 2 3 PDF

    t5d diode

    Abstract: T5D SOT23 zetex zvn2206 package details
    Text: ZETEX SEMICOND UCTORS TSD ^70570 D □DQSbb'i 3 • ZETB 95D 0 5 6 6 9 N-channel enhancement mode vertical DMOS FET ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


    OCR Scan     		ZVN2206 2206B ZVN2206L O-220 t5d diode T5D SOT23 zetex zvn2206 package details PDF