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    SOURIAU-SUNBANK JBIH8B3APNH

    Circular MIL Spec Connector 8525 HERMETIC SZ 8-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI JBIH8B3APNH Each 261 1
    • 1 $278.67
    • 10 $278.67
    • 100 $278.67
    • 1000 $278.67
    • 10000 $278.67
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    SOURIAU-SUNBANK 8525IH8B3APWH

    Circular MIL Spec Connector
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 8525IH8B3APWH Each 250 1
    • 1 $795.34
    • 10 $795.34
    • 100 $795.34
    • 1000 $795.34
    • 10000 $795.34
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    SOURIAU-SUNBANK 8525-02H10B6PWH

    Circular MIL Spec Connector
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 8525-02H10B6PWH Each 246 1
    • 1 $245.18
    • 10 $245.18
    • 100 $245.18
    • 1000 $245.18
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    SOURIAU-SUNBANK DDH50P102

    D-Sub High Density Connectors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DDH50P102 Each 50 1
    • 1 $454.04
    • 10 $454.04
    • 100 $454.04
    • 1000 $454.04
    • 10000 $454.04
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    SOURIAU-SUNBANK DEH09P102

    D-Sub High Density Connectors D-SUB HERMETIC CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DEH09P102 Each 3
    • 1 -
    • 10 $573.28
    • 100 $573.28
    • 1000 $573.28
    • 10000 $573.28
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    Find more FERRO price and stock on Findchips.com

    FERRO Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    11-220-B Ferronics Accessories Toroids Used For Noise Or Rfi Suppression Original PDF
    11-220-K Ferronics Accessories Toroids Used For Noise Or Rfi Suppression Original PDF
    12-345-K Ferronics Accessories Multi-Hole Wide Band Cores Original PDF
    1580K Series Ferroperm Inductors and Transformers Original PDF
    1580 Series Ferroperm Inductors and Transformers Original PDF
    1582 Series Ferroperm Inductors and Transformers Original PDF
    1583 Series Ferroperm Inductors and Transformers Original PDF
    1585 Series Ferroperm Inductors and Transformers Original PDF
    1586 Series Ferroperm Inductors and Transformers Original PDF
    1588 Series Ferroperm Inductors and Transformers Original PDF
    15EC24 Series Ferroperm Inductors and Transformers Original PDF
    15EC36 Series Ferroperm Inductors and Transformers Original PDF
    15SC108 Ferroperm Inductors and Transformers Original PDF
    15SC137 Ferroperm Inductors and Transformers Original PDF
    15SC177 Ferroperm Inductors and Transformers Original PDF
    15SC178 Ferroperm Inductors and Transformers Original PDF
    15SC179 Ferroperm Inductors and Transformers Original PDF
    15SC216 Ferroperm Inductors and Transformers Original PDF
    15SC217 Ferroperm Inductors and Transformers Original PDF
    15SC218 Ferroperm Inductors and Transformers Original PDF
    ...

    FERRO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    25CL64B-GA

    Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
    Text: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25CL64B FM25CL64B MS-012 FM25CL64B, L3502G1, 25CL64BGA AL3502G1 RIC1104 25CL64B-GA 25cl64 FM25CL64B-Ga PDF

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A PDF

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g PDF

    rg5H20

    Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
    Text: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25H20 rg5H20 fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G PDF

    1822-HEX

    Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
    Text: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with


    Original     		HM71V832 32768-word 32k-word HM71V832-15 HM71V832FP FP-28DA) HM71V832T TFP-28DB) 1822-HEX HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00013-6v0-E MB85RC64V MB85RC64V PDF

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-4v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		DS501-00015-4v0-E MB85RS64V MB85RS64V PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00023-1v0-E MB85RS2MT MB85RS2MT PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48) PDF

    MB85RS1MT

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00022-2v0-E MB85RS1MT MB85RS1MT PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00021-2v0-E MB85RC128A MB85RC128A 128K-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		DS501-00008-6v0-E MB85RS128A MB85RS128A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00025-1v0-E FRAM MB85RS2MT MB85RS2MT is a 2M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the


    Original     		NP501-00025-1v0-E MB85RS2MT MB85RS2MT DIP-8P-M03) PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		DS501-00010-7v0-E MB85RC16V MB85RC16V PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		MB85RC64 MB85RC64 PDF

    Untitled

    Abstract: No abstract text available
    Text: www.hamlin.com 59090 Heavy Duty Vane Sensor Features and Benefits Features Benefits Applications • Sensor and magnet contained in single housing • Sensor operates when ferrous vane passes through slot • Normally closed standard, normally closed high voltage or change over


    Original     		PDF

    DTM04-3P

    Abstract: molex mx camshaft sensor DTM04 Gear Wheel Speed Sensor magnetic stripe SENSOR 1128 J1128 SAE J1128 wire DEUTSCH DTM04
    Text: www.hamlin.com 55505 Flange Mount Hall Effect Geartooth Sensor Features Benefits Applications • Ferrous target sensing • Internal circuit protection • Protection against severe and automotive environments • Self adjusting magnetic range • Automotive grade circuit protection


    Original     		B6063 DTM04-3P molex mx camshaft sensor DTM04 Gear Wheel Speed Sensor magnetic stripe SENSOR 1128 J1128 SAE J1128 wire DEUTSCH DTM04 PDF

    81116

    Abstract: 81-116
    Text: sony . DM-233 Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is suitable for angle of rotation detection. Package Outline


    OCR Scan     		DM-233 150mVp-p DM-233 81116 81-116 PDF

    bss 10

    Abstract: BSS39 bss47
    Text: RUBYCON AMERICA INC GflE D | TTGOSTÔ □OQDSô'l □ | c a p a c ito rs ^ O.^ “/ / - Q REB M 8 8 —27(BSS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS BSS SERIES [For Speaker Crossover Networks, Low Impedance, Miniaturize] • FEATURES # R e d u c e d non-liner distortions through the elimination of ferrom agnetic


    OCR Scan     		15MIN bss 10 BSS39 bss47 PDF

    GN02018B

    Abstract: No abstract text available
    Text: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply


    OCR Scan     		GN02018B 820MHz 950MHz, -10dBm -30dBm GN02018B PDF

    4501

    Abstract: No abstract text available
    Text: Series 4501 Surface Mount Low-Profile Power Toroids POWER DEVICES SERIES 4501 FERROUS ALLOY CORE I I I Parallel Connected Specifications VHte Pot, Terminal #1 5£HE.MAT1£ ù t& rt 4 99 Î 4501- 102M 4501- 104M 4501- 106M 4501 108M 4501' 110M 4501- 112M_ 4501 114M


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Magnetic Products ONE AND TWO AXIS MAGNETIC SENSORS HMC1001 HMC1002 FEATURES APPLICATIONS • Measures strength and direction of magnetic fields • Compassing • Medical Instruments • Detects change in magnetic field due to presence of ferromagnetic objects


    OCR Scan     		HMC1001 HMC1002 10E-4 PDF