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    MB85RC16V Search Results

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    MB85RC16V Price and Stock

    KAGA FEI America Inc MB85RC16VPNF-G-JNE1

    IC FRAM 16KBIT I2C 1MHZ 8SOP
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    DigiKey MB85RC16VPNF-G-JNE1 Tray
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    KAGA FEI America Inc MB85RC16VPNF-G-AWE2

    IC FRAM 16KBIT I2C 1MHZ 8SOP
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    DigiKey MB85RC16VPNF-G-AWE2 Tube 850
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    Mouser Electronics MB85RC16VPNF-G-AWE2 837
    • 1 $1.44
    • 10 $1.31
    • 100 $1.13
    • 1000 $1.11
    • 10000 $0.992
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    KAGA FEI America Inc MB85RC16VPNF-G-AWERE2

    IC FRAM 16KBIT I2C 1MHZ 8SOP
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    DigiKey MB85RC16VPNF-G-AWERE2 Reel 1,500
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    Mouser Electronics MB85RC16VPNF-G-AWERE2 1,336
    • 1 $1.44
    • 10 $1.31
    • 100 $1.14
    • 1000 $1.07
    • 10000 $0.992
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    KAGA FEI America Inc MB85RC16VPNF-G-JNERE1

    IC FRAM 16KBIT I2C 1MHZ 8SOP
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    DigiKey MB85RC16VPNF-G-JNERE1 Reel
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    KAGA FEI America Inc MB85RC16VPNF-G-JNN1E1

    IC FRAM 16KBIT I2C 1MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RC16VPNF-G-JNN1E1 Tube 760
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    Mouser Electronics MB85RC16VPNF-G-JNN1E1 331
    • 1 $1.55
    • 10 $1.42
    • 100 $1.32
    • 1000 $1.11
    • 10000 $1.06
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    MB85RC16V Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MB85RC16VPNF-G-JNE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 16KBIT 400KHZ 8SOP Original PDF
    MB85RC16VPNF-G-JNERE1 Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 16K I2C 1MHZ 8SOP Original PDF
    MB85RC16VPNF-G-JNN1E1 Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 16K I2C 1MHZ 8SOP Original PDF
    MB85RC16VPNF-G-JNN1ERE1 Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 16K I2C 1MHZ 8SOP Original PDF

    MB85RC16V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-7v0-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-6v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-6v0-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-2v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-2v0-E MB85RC16V MB85RC16V

    RC16V

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-4v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-4v0-E MB85RC16V MB85RC16V RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-5v1-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-5v1-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-0v01-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-0v01-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-6v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-6v0-E MB85RC16V MB85RC16V

    FPT-8P-M02

    Abstract: MB85RC16VPNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00011-1v0-E FRAM MB85RC16V MB85RC16V is a 16K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original
    PDF NP501-00011-1v0-E MB85RC16V MB85RC16V 16K-bits FPT-8P-M02 MB85RC16VPNF-G-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-3v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-3v0-E MB85RC16V MB85RC16V

    MB85RC16VPNF-G-JNN1E1

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-5v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00010-5v0-E MB85RC16V MB85RC16V MB85RC16VPNF-G-JNN1E1