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    FET 2SK120 Search Results

    FET 2SK120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET 2SK120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1045

    Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
    Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100


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    PDF 2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    2SK1225

    Abstract: 2SK1206
    Text: IHITM HHThEOS 0013257 77fl blE D 2SK1206,ZSK122d SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator, DC-DC Converter


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    PDF 2SK1225 2SK1206 M41b505 G0132b0 2SK1206, 2SK1225-

    DIODE T25 4 ko

    Abstract: 2SK1206 40V 12A N-Channel MOS 2SK1225 HIV DIODE DIODE T25 4 lo
    Text: HHThEOS 0013257 77fl blE D 2SK1206,ZSK122d IHITM SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator, DC-DC Converter


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    PDF 2SK1225 2SK1206 G0132b0 2SK1206, 2SK1225- DIODE T25 4 ko 40V 12A N-Channel MOS HIV DIODE DIODE T25 4 lo

    2sk1203

    Abstract: DA468
    Text: • 2SK1203 4iHb2DS GG13245 TSb ■ H I T 4 HITACHI/ OPTOELECTRONICS blE ]> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • • Low On-Resistance High Speed Switching • Low Drive Current 1 .G ile 2 . D rain (Flan ge) 3 . S o u rce


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    PDF 2SK1203 GG13245 SK1203 2sk1203 DA468

    2SK1202

    Abstract: 2SK120 koss
    Text: • 2SK1202 MHIbSQS 0013241 3Q0 ■ HITM HITACHI / OPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET blE D" g HIGH SPEED POWER SW ITCHING 3 ■ FEATURES 1 .G ate, 2 .D rain (Flange) 3. Source (Dimensions in ran ) L Ï* • • • • • Low On-Resistance


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    PDF 2SK1202 2SK12 2SK1202 2SK120 koss

    2SK1202

    Abstract: TTL-T100
    Text: 2SK1202- • L|inb2ü5 ÜD13241 30Q ■ H I T M HITACHI/ OPTOELECTRONICS blE D" SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1.G ate, 2 .D rain (Flange) 3. Source (Dimensions in nm ) ■jP • Low On-Resistance • High Speed Switching


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    PDF 2SK1202SILICON D13241 Tc--25 2SK1202 TTL-T100

    kds 8a

    Abstract: KDS 7c KDS 4a a7ds
    Text: 2SK1204 SILICON N-CHANNEL MOS FET mm m •I • X 'f ? f - > ? ' P DC —DC 3 .x , 0.9 >ut 5.45 ± 0 .5 {Ta=25”C • ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage Gâte* Source Voltage Drain C urrent Drain Peak Current Body-Drain Diode Reverse Drain Current


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    PDF Tc-25 Kds-10V -100A/ kds 8a KDS 7c KDS 4a a7ds

    2SK1202

    Abstract: LM 464 diode silicon P channel MOS FET J 350 Hitachi Scans-001 koss
    Text: • 2SK1202 MHIbSQS 0013241 300 ■ HITM HITACHI/ÍOPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET b lE »' g HIGH SPEED POWER SW ITCHING ■ FEATURES • • • • • 1.G ate, 2 . D ra in F la n g e ) Low On-Resistance High Speed Switching Low Drive Current


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    PDF 2SK1202 2SK1202 LM 464 diode silicon P channel MOS FET J 350 Hitachi Scans-001 koss

    K1201

    Abstract: No abstract text available
    Text: MMTbEDS 0D13E37 TÔT • H I T M 2SK1201 HI TACHI/ OPTOELECTRONICS blE D S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1.G ate 2. D rain (Flange) 3. Source (Dimensions in mm) Low On-Resistance • High Speed Switching


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    PDF 2SK1201 0D13E37 DD1323S K1201

    D3A DIODE

    Abstract: No abstract text available
    Text: 2SK1203 SILICON N-CHANNEL MOS FET •& • X 'f fi -vi->-r • X 'f y -f- > ^ U ^ .a U - ? DC—DC ^ 3.6 B 0.9 1. Gate 2. Drain Flange 3. Source (D imensions in mm) rue i u- rl 5.45 ± 0.5 5.45 ± 0 5 (TO-3P) ■ ABSOLUTE MAXIMUM RATINGS ( 7 a = 25°C) R ating


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    PDF Tc-25 Ta-25 Vos-720V, Vds-20V* 00A/j D3A DIODE

    SG-313

    Abstract: SG313 2sk1204
    Text: 2SK1204 • MM Tb EÜ S O Q I B E H ^ bTl ■ H I T M HITACHI/ O P T O E L E C T R O N I C S blE J> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 1. Gate 2. Drain (Flange)


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    PDF 2SK1204 SG-313 SG313 2sk1204

    2SK1204

    Abstract: 100J ATES
    Text: 2 S K 1 2 0 4 • MHTbEGS 001324^ bTl ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 4 ■ FEATURES • • • • • U25 Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator and


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    PDF 2SK1204 GD13ES1 2SK1204 100J ATES

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    FET 2SK125

    Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
    Text: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D


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    PDF 2SK84 2SK85 2SK87 2SK89 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 FET 2SK125 FET 2SK109 2SK109 2SK105 2sk109a 2SK120 2SK107 2SK124

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


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    PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297