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    FET 2SK2761 Search Results

    FET 2SK2761 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET 2SK2761 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2761

    Abstract: No abstract text available
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761

    2SK2761-01MR

    Abstract: 2SK2761
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761-01MR 2SK2761

    2SK2761

    Abstract: mosfet 10a 600v 2SK2761-01MR
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761 mosfet 10a 600v 2SK2761-01MR

    2SK4111

    Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
    Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF 2SK258 O-204AA/TO-3 2SK259 2SK258H O-218 2SK695 2SK695A 2SK4111 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V 10A 50W Outline Drawing > Features - IQ High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    OCR Scan     		PDF 2SK2761-01MR Tc-25