Contextual Info: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0100 Rev.1.00 Nov 22, 2011 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Target Specifications Datasheet RJF0606JPE 60V-40A Silicon N Channel Thermal FET Power Switching R07DS0580EJ0300 Rev.3.00 May 15, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Target Specifications Datasheet RJF0618JPE 60V-40A Silicon N Channel Thermal FET Power Switching R07DS1069EJ0100 Rev.1.00 May 15, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Target Specifications Datasheet RJF0618JPE 60V-40A Silicon N Channel Thermal FET Power Switching R07DS1069EJ0101 Rev.1.01 Dec 25, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

teledyne philbrick 1020

Abstract: 1421 op TELEDYNE PHILBRICK teledyne 1424 teledyne 1421
Contextual Info: 1421 1424 1425 1426 •WTELECYNE PHILBRICK FET Input High Performance Monolithic Op Amps The 1421, 1424, 1425 and 1426 comprise a group of general purpose, 741 pin-compatible FET op amps with specifications approaching low drift FET modules such as the 1020. For all but the 1424, typical low

CDR125

Abstract: teledyne crystalonics vy 5 fet CDR125AL CDR125AP RTL DTL logic
Contextual Info: M O NO LITH IC FET D R I V E R CDR125AL 6 CHANNEL CDR125AP MONOLITHIC INTEGRATED CIRCUITS FOR DRIVING FET ANALOG SWITCHES • PERFORMS AM PLIFICATION AND DC LEVEL SHIFTING REQUIRED BETWEEN LOW LEVEL LOGIC AND MOS OR JUNCTION FET SWITCHES • DIRECT INTERFACE WITH TTL, DTL AND RTL

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M GFX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

rf attenuator soic

Abstract: DC bias of FET 2 watt fet DC bias of gaas FET GHz Power FET
Contextual Info: Section 1 RF GaAs MMIC Products in Plastic Packages Table of Contents GaAs MMIC Control FET in SOT 143 DC-2.5 GHz . 1-4 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz .

Contextual Info: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ U n i t : m i l l i m e t e r s inches

transistor BD 522

Abstract: J023
Contextual Info: Part Number: Integra ILD1011M550HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at

dc 20v motor matsua

Abstract: mosfet Gate Drive dc 20v motor matsushita AN8175 panasonic igbt and power mosfet driver
Contextual Info: Panasonic Power MOS-FET Gate Drive 1C AN8175/S Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HYIC and latch immune CMOS technologies enable ruggedized

ELECTRONIC BALLAST SK

Contextual Info: Panasonic Power MOS-FET Gate Drive IC AN8175/S • Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

Contextual Info: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 03 — 24 January 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

BUK75

Abstract: BUK754R0-55B BUK764R0-55B
Contextual Info: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

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APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This