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    FET BF244 Search Results

    FET BF244 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET BF244 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


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    2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet PDF

    2N3819 junction fet

    Abstract: 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage


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    MPF6659 MPF6660 MPF6661 MPF6661 226AE) MSC1621T1 MSC2404 MSD1819A 2N3819 junction fet 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR 60


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    VN2406L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    2N3819 fet

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


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    2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237 PDF

    BC237

    Abstract: BC857A MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


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    BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC857A MARKING CODE diode sod123 W1 PDF

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


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    BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056 PDF

    BC237

    Abstract: Fet BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V


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    VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245 PDF

    BC237

    Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


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    VN2222LL 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819 PDF

    BC237

    Abstract: transistor TO-92 bc108 VN10lM equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN10LM N–Channel — Enhancement 3 DRAIN 2 GATE  1 SOURCE 1 2 3 CASE 29–05, STYLE 22 TO–92 TO–226AE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous


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    VN10LM 226AE) Vol218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 transistor TO-92 bc108 VN10lM equivalent PDF

    code marking 6z sot-23

    Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous


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    MMBF170LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 code marking 6z sot-23 BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72 PDF

    BC237

    Abstract: VN2410L equivalent sot323 w2
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2410L 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR 60 Vdc Gate – Source Voltage


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    VN2410L 226AA) T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 VN2410L equivalent sot323 w2 PDF

    BC237

    Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


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    BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet PDF

    date code IEC 62

    Abstract: bc107a pin out BC237 bf256c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage


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    VN0610LL 226AA) secon218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 date code IEC 62 bc107a pin out BC237 bf256c PDF

    FET BFW10

    Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
    Text: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823


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    TP4224 2N4224 SMP5248 TMPF5248 TP5248 BFW10 SMP3823 TIS34 TMPF3823 FET BFW10 BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j PDF

    BC237

    Abstract: MSA1022 msc2295 BF391 "direct replacement"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for


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    M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 MSA1022 msc2295 BF391 "direct replacement" PDF

    e304 fet

    Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
    Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092


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    BF256B BF256LB 2SK121 ESM4092 MFE2005 MPF4416 UC2149 2N4978 PN4304 e304 fet 2SK581 Siliconix E304 MPF4860 TP5950 InterFET bf256s PN4222 U199 PDF

    TP4221

    Abstract: BFW12 2SK34 KE4221 2N4221 motorola bf256 2N4220 2sK34 fet
    Text: JUNCTION FET Item Number Part Number Manufacturer 9,. V BR GSS loss (V) (A) Min (S) Max 2.5m 2.5m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m ;3.om 3.0m 3.0m 3.0m 3.0m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m


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    TP5556 2N5556 MPF4220 KE4220 PN4220 SMP4220 TMPF4220 TP4220 TP4221 BFW12 2SK34 KE4221 2N4221 motorola bf256 2N4220 2sK34 fet PDF

    2SK163

    Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
    Text: RF!๮֩!‫ڼ‬7Ӳ RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2005౎11ሆ ݀քන೺;!!2005౎11ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ֋!&!ጺঢ়૙!RFׂ೗ Ⴞჾ ࣌ᆓ۩ለ‫ڼ‬7ӲRF๮֩ă࿢்ඓ႑Ljएᇀᆌᆩ႑တ‫ڦ‬ඇ঍ࢻ๕֡ፕႎঋ‫ࣷॽۅ‬๑౞इᅮ‫ݩ‬റLj࿢்‫ڦ‬


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    TZA30x6 2SK163 BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W PDF

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    2SK163 spice model

    Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
    Text: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed


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    CGD923

    Abstract: 2SK163 BFG480W 3SK290 BF1009SW bf998 BFG591 amplifier 1T404A 2N5116 2N5653
    Text: セミコンダクタ RFマニュアル第6版 RF製品のアプリケーションおよびデザイン・マニュアル 2005年5月 リリース日付:2005年5月 ドキュメント注文番号: 9397 750 15125 セミコンダクタ RF製品担当副社長兼ジェネラル・マネージャ


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    solutions/multimarket/transistors/25 CGD923 2SK163 BFG480W 3SK290 BF1009SW bf998 BFG591 amplifier 1T404A 2N5116 2N5653 PDF

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    2SK163-L

    Abstract: BFG480W BFG135 amplifier BB143 Varicap BB141 BB145 2SK163 3SK290 BFP180
    Text: RFマニュアル第7版 RF製品のアプリケーションおよびデザイン・マニュアル 2005年12月 リリース日付:2005年12月 Henk Roelofs RF製品担当副社長兼ジェネラル・マネージャ 概要 RFマニュアル第7版をご利用いただきありがとうございます。当社が対話型操作によるアプリケー


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    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan
    K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686 PDF