Untitled
Abstract: No abstract text available
Text: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20653ANP
REJ03G1849-0200
R2J20653ANP
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Untitled
Abstract: No abstract text available
Text: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20653ANP
REJ03G1849-0200
R2J20653ANP
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Untitled
Abstract: No abstract text available
Text: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20653ANP
REJ03G1849-0200
R2J20653ANP
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MARKING code VO SMD fet
Abstract: marking cdm smd 2a 3 PIN fet FET Design Catalog
Text: INTEGRATED CIRCUITS CBT3125 Quadruple FET bus switch Product data File under Integrated Circuits — ICL03 Philips Semiconductors 2001 Dec 12 Philips Semiconductors Product data Quadruple FET bus switch CBT3125 DESCRIPTION PIN CONFIGURATION The CBT3125 quadruple FET bus switch features independent line
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CBT3125
ICL03
CBT3125
125-type
JESD78
SA00562
08-Jan-03)
MARKING code VO SMD fet
marking cdm
smd 2a 3 PIN fet
FET Design Catalog
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ENN8366
Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5903
ENN8366
CPH5903
2SK1740-equivalent
2SC2812-equivalent
ENN8366
ITR01960
ITR01961
ITR01963
ITR01964
ITR01965
ITR01966
J 350 FET
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Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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TKM2502Y
Abstract: FET n-ch 1 ohm
Text: Drain common dual Nch power MOS FET / TKM2502Y Page 1 of 2 New Drain common dual Nch power MOS FET TKM2502Y Description The TKM2502Y is a drain-common dual Nch power MOS-FET. Excellent resistor characteristics make it ideal for power management in 2-channel battery protection
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TKM2502Y
TKM2502Y
HSON3030-8)
SON3030-8
10ohm
jp/products/new/mos-fet/tkm2502y
FET n-ch 1 ohm
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marking 1a
Abstract: CPH5901 2SC4639 2SK932 82786
Text: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5901
ENN8278A
CPH5901
2SK932
2SC4639,
marking 1a
2SC4639
82786
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Untitled
Abstract: No abstract text available
Text: CPH5901 Ordering number : ENN8278 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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ENN8278
CPH5901
CPH5901
2SK932
2SC4639,
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TA3705
Abstract: No abstract text available
Text: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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ENN8278A
CPH5901
CPH5901
2SK932
2SC4639,
TA3705
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Untitled
Abstract: No abstract text available
Text: UC1715-SP www.ti.com SLUSAU8 – MAY 2013 COMPLIMENTARY SWITCH FET DRIVERS Check for Samples: UC1715-SP FEATURES 1 • • • • • • • • • • Single Input PWM and TTL Compatible High Current Power FET Driver, 1-A Source/2-A Sink Auxiliary Output FET Driver,
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UC1715-SP
50-ns
UC1715
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Untitled
Abstract: No abstract text available
Text: UC1715-SP www.ti.com SLUSAU8 – MAY 2013 COMPLIMENTARY SWITCH FET DRIVERS Check for Samples: UC1715-SP FEATURES 1 • • • • • • • • • • Single Input PWM and TTL Compatible High Current Power FET Driver, 1-A Source/2-A Sink Auxiliary Output FET Driver,
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UC1715-SP
50-ns
UC17ti
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Untitled
Abstract: No abstract text available
Text: CPH5902 Ordering number : EN6962C SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5902 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5902
EN6962C
CPH5902
2SK2394-equivalent
2SC4639-equivalent
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Untitled
Abstract: No abstract text available
Text: CPH5901 Ordering number : EN8278B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5901
EN8278B
CPH5901
2SK932
2SC4639,
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BG3013
Abstract: FET 8PIN BG3013F 3182 ROHM fi01
Text: ROHM CO LT» MDE D PI '- H £ - 1 9 -1 3 EGaAs Devices • Rohm's GaAs devices are available in FETs and integrated circuits fabricated with the GaAs MESFET process, and Hyper FETs utilizing the MBE process. B Hyper FET Hetero Structured InGaAs FET • Ultra-Low Noise Hyper FET
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RHF1203CL
BG3011F/CF
BG3012F/CF
BG3013F/CF
128/T29)
BG3013
FET 8PIN
BG3013F
3182 ROHM
fi01
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CP Clare RELAY
Abstract: triac control 8-pin Solid State Switches LCC Triac PLA power relay Clare Relay scr 1A fet mos triac catalog triac control 16 pin
Text: Clare°ofeafeifi] Chart Solid State Switches AC POWER SWITCHES SPECIALTYi pro ducts! 1A, 2A MOS FET 400 .250 7 2 1 3750 YES ULBABT 6 PIN, 8 PIN XCA 1A MOS FET 300 .100 25 5 1 3750 YES UL, BABT 6 PIN, 8 PIN OMA 1A, 2A MOS FET 300 .100 25 10 2 1500 YES UL.BABT
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SSP15
CP Clare RELAY
triac control 8-pin
Solid State Switches
LCC Triac
PLA power relay
Clare Relay
scr 1A
fet mos
triac catalog
triac control 16 pin
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M 9639 transistor
Abstract: poliswitch ISW6
Text: 1/4 • S t r u c t u r e ■ P r o d u c t Semiconductor integrated circuit DSC/DVC system power LSI ■ M BD9639MWV o d e l ■ F u n c t i o n s 1 (2) (3) 6ch DC/DC converter ・CH1 Boost FET embedded ・CH2 Buck FET embedded ・CH3 Buck-Boost FET embedded
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BD9639MWV
R1010A
M 9639 transistor
poliswitch
ISW6
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Untitled
Abstract: No abstract text available
Text: 1/4 • S t r u c t u r e ■ P r o d u c t Semiconductor integrated circuit DSC/DVC system power LSI ■ M BD9639MWV o d e l ■ F u n c t i o n s 1 (2) (3) 6ch DC/DC converter ・CH1 Boost FET embedded ・CH2 Buck FET embedded ・CH3 Buck-Boost FET embedded
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BD9639MWV
R1120A
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M 9639 transistor
Abstract: No abstract text available
Text: 1/4 • S t r u c t u r e ■ P r o d u c t Semiconductor integrated circuit DSC/DVC system power LSI ■ M BD9639MWV o d e l ■ F u n c t i o n s 1 (2) (3) 6ch DC/DC converter ・CH1 Boost FET embedded ・CH2 Buck FET embedded ・CH3 Buck-Boost FET embedded
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BD9639MWV
R1010A
M 9639 transistor
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Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE PRODUCT NAME Silicon Monolithic Integrated Circuit Overvoltage Protection Controller with Internal FET MODEL NAME BD6041GUL FEATURES ●Overvoltage Protection up to 28V ●Internal Low Ron 125m FET ●Over voltage Lockout (OVLO) ●Under voltage Lockout(UVLO)
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BD6041GUL
VCSP50L1
R1120A
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Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE PRODUCT NAME Silicon Monolithic Integrated Circuit Overvoltage Protection Controller with Internal FET MODEL NAME BD6042GUL FEATURES ●Overvoltage Protection up to 28V ●Internal Low Ron 125mΩ FET ●Over voltage Lockout (OVLO) ●Under voltage Lockout(UVLO)
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BD6042GUL
VCSP50L1
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2N6661
Abstract: No abstract text available
Text: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics
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2N6661
2N6661
com/2n6661
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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BD8158FVM
Abstract: laptop power on sequence circuit diagram BD8152FVM DAN217U RB161M-20
Text: TECHNICAL NOTE Single-chip built-in FET type Switching Regulator Series High Efficiency Step-up Switching Regulators BD8152FVM / BD8158FVM zDescription BD8152FVM / BD8158FVM are the 1-channel step-up switching regulator which builds in the low voltage FET. Input voltage
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BD8152FVM
BD8158FVM
BD8158FVM
BD8152FVM)
BD8158FVM)
BD8158FVM,
laptop power on sequence circuit diagram
DAN217U
RB161M-20
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