Untitled
Abstract: No abstract text available
Text: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20653ANP
REJ03G1849-0200
R2J20653ANP
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Untitled
Abstract: No abstract text available
Text: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20653ANP
REJ03G1849-0200
R2J20653ANP
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Untitled
Abstract: No abstract text available
Text: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20653ANP
REJ03G1849-0200
R2J20653ANP
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ENN8366
Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5903
ENN8366
CPH5903
2SK1740-equivalent
2SC2812-equivalent
ENN8366
ITR01960
ITR01961
ITR01963
ITR01964
ITR01965
ITR01966
J 350 FET
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Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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TKM2502Y
Abstract: FET n-ch 1 ohm
Text: Drain common dual Nch power MOS FET / TKM2502Y Page 1 of 2 New Drain common dual Nch power MOS FET TKM2502Y Description The TKM2502Y is a drain-common dual Nch power MOS-FET. Excellent resistor characteristics make it ideal for power management in 2-channel battery protection
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TKM2502Y
TKM2502Y
HSON3030-8)
SON3030-8
10ohm
jp/products/new/mos-fet/tkm2502y
FET n-ch 1 ohm
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marking 1a
Abstract: CPH5901 2SC4639 2SK932 82786
Text: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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CPH5901
ENN8278A
CPH5901
2SK932
2SC4639,
marking 1a
2SC4639
82786
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Untitled
Abstract: No abstract text available
Text: CPH5901 Ordering number : ENN8278 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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ENN8278
CPH5901
CPH5901
2SK932
2SC4639,
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TA3705
Abstract: No abstract text available
Text: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
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ENN8278A
CPH5901
CPH5901
2SK932
2SC4639,
TA3705
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Untitled
Abstract: No abstract text available
Text: UC1715-SP www.ti.com SLUSAU8 – MAY 2013 COMPLIMENTARY SWITCH FET DRIVERS Check for Samples: UC1715-SP FEATURES 1 • • • • • • • • • • Single Input PWM and TTL Compatible High Current Power FET Driver, 1-A Source/2-A Sink Auxiliary Output FET Driver,
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UC1715-SP
50-ns
UC1715
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Untitled
Abstract: No abstract text available
Text: UC1715-SP www.ti.com SLUSAU8 – MAY 2013 COMPLIMENTARY SWITCH FET DRIVERS Check for Samples: UC1715-SP FEATURES 1 • • • • • • • • • • Single Input PWM and TTL Compatible High Current Power FET Driver, 1-A Source/2-A Sink Auxiliary Output FET Driver,
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UC1715-SP
50-ns
UC17ti
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M 9639 transistor
Abstract: poliswitch ISW6
Text: 1/4 • S t r u c t u r e ■ P r o d u c t Semiconductor integrated circuit DSC/DVC system power LSI ■ M BD9639MWV o d e l ■ F u n c t i o n s 1 (2) (3) 6ch DC/DC converter ・CH1 Boost FET embedded ・CH2 Buck FET embedded ・CH3 Buck-Boost FET embedded
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BD9639MWV
R1010A
M 9639 transistor
poliswitch
ISW6
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Untitled
Abstract: No abstract text available
Text: 1/4 • S t r u c t u r e ■ P r o d u c t Semiconductor integrated circuit DSC/DVC system power LSI ■ M BD9639MWV o d e l ■ F u n c t i o n s 1 (2) (3) 6ch DC/DC converter ・CH1 Boost FET embedded ・CH2 Buck FET embedded ・CH3 Buck-Boost FET embedded
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BD9639MWV
R1120A
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M 9639 transistor
Abstract: No abstract text available
Text: 1/4 • S t r u c t u r e ■ P r o d u c t Semiconductor integrated circuit DSC/DVC system power LSI ■ M BD9639MWV o d e l ■ F u n c t i o n s 1 (2) (3) 6ch DC/DC converter ・CH1 Boost FET embedded ・CH2 Buck FET embedded ・CH3 Buck-Boost FET embedded
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BD9639MWV
R1010A
M 9639 transistor
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Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE PRODUCT NAME Silicon Monolithic Integrated Circuit Overvoltage Protection Controller with Internal FET MODEL NAME BD6042GUL FEATURES ●Overvoltage Protection up to 28V ●Internal Low Ron 125mΩ FET ●Over voltage Lockout (OVLO) ●Under voltage Lockout(UVLO)
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BD6042GUL
VCSP50L1
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2N6661
Abstract: No abstract text available
Text: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics
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2N6661
2N6661
com/2n6661
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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2N6659
Abstract: No abstract text available
Text: 2N6659 60V Vdss N-Channel FET field Effect Transistor 11.69 Transistors MOSFETs . Page 1 of 1 Enter Your Part # Home Part Number: 2N6659 Online Store 2N6659 Diodes 60V Vdss N -Channel FET (field Effect Transistor) Transistors Integrated Circuits Optoelectronics
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2N6659
2N6659
com/2n6659
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radioactivity
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME Over Voltage Protection Controller with Internal FET MODEL NAME BD6044GUL BLOCK DIAGRAM See Figure 1 PACKAGE DIMENSIONS See Figure 2 FEATURES ●Overvoltage Protection up to 36V ●Internal Low Ron 125m FET
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BD6044GUL
VCSP50L1
R0039A
radioactivity
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Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE PRODUCT NAME : : Silicon Monolithic Integrated Circuit Synchronous rectification with built-in FET type DC/DC converter IC MODEL NAME : BD8649EFV FEATURES : ・Synchronous rectification with built-in FET type DC/DC converter ・Output current 3A
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BD8649EFV
100kHz600kHz
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VEC2901
Abstract: No abstract text available
Text: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
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VEC2901
ENN8198
VEC2901
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Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE : PRODUCT NAME MODEL NAME : FEATURES : : Silicon Monolithic Integrated Circuit Synchronous rectification with built-in FET type DC/DC converter IC BD8646FV ・Synchronous rectification with built-in FET type DC/DC converter ・Output current 2A
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BD8646FV
100kHzâ
600kHz
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BD8643
Abstract: No abstract text available
Text: 1/4 STRUCTURE PRODUCT NAME : : Silicon Monolithic Integrated Circuit Synchronous rectification with built-in FET type DC/DC converter IC MODEL NAME : BD8643FV FEATURES : ・Synchronous rectification with built-in FET type DC/DC converter ・Output current 3A
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BD8643FV
100kHz600kHz
BD8643
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cdip 8
Abstract: No abstract text available
Text: UC1710 UC2710 UC3710 High Current FET Driver FEATURES DESCRIPTION • Totem Pole Output with 6A Source/Sink Drive The UC1710 family of FET drivers is made with a high-speed Schottky process to interface between low-level control functions and very high-power
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UC1710
UC2710
UC3710
cdip 8
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