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    FET DRO 10 GHZ Search Results

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    Untitled

    Abstract: No abstract text available
    Text: Sources K EY SPECIFICATIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­


    OCR Scan     		MIL-E-5400 MIL-E-16400 PDF

    Untitled

    Abstract: No abstract text available
    Text: K EY SPECIFICA TIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­ nent specifications are discussed below.


    OCR Scan     		MIL-E-5400 MIL-E-16400 PDF

    Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640

    Abstract: Dielectric Resonator Oscillator at 11.92GHz BFP640 dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
    Text: 11.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Description 3 Infineon’s BFP640 is a high-performance, low-cost Silicon-Germanium bipolar transistor housed in a 4-lead SOT-343 surface mount package. With a transition


    Original     		92GHz BFP640 BFP640 OT-343 OT343 Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Dielectric Resonator Oscillator at 11.92GHz dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit PDF

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO PDF

    design DRO

    Abstract: Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro
    Text: FREQUENCY GENERATION SELECTION GUIDE MODEL NO. FREQUENCY INPUT OUTPUT MHz (MHz) CONVERSION LOSS (dB) TYP SPURIOUS F1 (dB) TYP REJECTION F3 (dB) TYP VSWR TYP CASE1 STYLE PAGE NO. 1.7:1 2.0:1 1.8:1 1.8:1 1.7:1 1.8:1 2.0:1 C-5 RH-3 C-5 C-5 FP-3 C-5 FP-2 467


    OCR Scan     		FM-102-4 FM-104 FM-106 DO-100 DO-120 DO-130 10KHz design DRO Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro PDF

    fet dro 10 ghz

    Abstract: dro 10 ghz RF 207 2-56UNC-2B
    Text: 32 CROs AND DROs These CROs and DROs are designed for frequency source applications in tough commercial and industrial environments. An extended operating temperature range is available. ELECTRICAL SPECIFICATIONS ENVIRONMENTAL SPECIFICATIONS Frequency Range:


    Original     		2-56UNC-2B fet dro 10 ghz dro 10 ghz RF 207 2-56UNC-2B PDF

    celeritek LNA

    Abstract: fet dro 10 ghz Celeritek CELERITEK SWITCH 10GHz mixer Image Reject Mixer waveguide 10GHz DRO
    Text: 18-GHz and 23-GHz Downconverters FEATURES ❏ Image-Reject Downconversion, USB/LSB TTL-Selectable ❏ Highly Reliable Thin-Film Hybrid Construction ❏ 4.0 dB Noise Figure ❏ +3 dBm Po-1dB ❏ -40°C to +70°C Operation DESCRIPTION CUSTOM OPTIONS Celeritek has developed a low-noise downconverter


    Original     		18-GHz 23-GHz WR-42 celeritek LNA fet dro 10 ghz Celeritek CELERITEK SWITCH 10GHz mixer Image Reject Mixer waveguide 10GHz DRO PDF

    AVANTEK YIG tuned oscillator

    Abstract: avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator avantek vto yig oscillator avantek yto oscillator
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5964-3431E 5968-3628E AVANTEK YIG tuned oscillator avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator avantek vto yig oscillator avantek yto oscillator PDF

    magnum microwave

    Abstract: No abstract text available
    Text: NAGNUN MICROWAVE 4 flE CORP » m 5725730 • i '- f * 1 i 000015b 1 SB MHC tt7'v:\ yinz,.: Jizmm '¿iirti-m „t ,! ! s Il ■ r ■ i ■ f 1 i " 5 Phase-Locked DRO Characteristics The Magnum lir.e of Phase-locked Dielectric Resonator DESCRIPTION Oscillators consists of the following series:


    OCR Scan     		000015b magnum microwave PDF

    yig oscillator application note

    Abstract: Dielectric Resonator Oscillator DRO dielectric resonator dielectric resonator oscillator variable oscillator Lumped Resonator Oscillator A008 amplifier TRANSISTOR AT-41400 bipolar transistor ghz s-parameter FET transistors with s-parameters
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to


    Original     		5964-3431E 5968-3628E yig oscillator application note Dielectric Resonator Oscillator DRO dielectric resonator dielectric resonator oscillator variable oscillator Lumped Resonator Oscillator A008 amplifier TRANSISTOR AT-41400 bipolar transistor ghz s-parameter FET transistors with s-parameters PDF

    Dielectric Resonator Oscillator DRO

    Abstract: yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Note that since the transistor s parameters change with frequency, k also varies with frequency.


    Original     		5968-3628E Dielectric Resonator Oscillator DRO yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836 PDF

    AVANTEK YIG tuned oscillator

    Abstract: yig oscillator hp Avantek yig avantek yig oscillator avantek YTO AVANTEK, yig yig oscillator avantek avantek vto Design DC Stability Into Your Transistor Circuits A008 amplifier TRANSISTOR
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to


    Original     		5964-3431E 5968-3628E AVANTEK YIG tuned oscillator yig oscillator hp Avantek yig avantek yig oscillator avantek YTO AVANTEK, yig yig oscillator avantek avantek vto Design DC Stability Into Your Transistor Circuits A008 amplifier TRANSISTOR PDF

    UAF3000

    Abstract: 9.75 GHz oscillator LNB down converter for Ku band ku-band lnb satellite lnb ku UAF3000TS ku-band pll lnb transistor k 975 DRO lnb mixer lnb
    Text: NXP fully integrated down converter PLL synthesizer/ mixer/amplifier TFF1004HN for satellite LNB Create a Ku-band DVB-S LNB for less, with higher reliability The TFF1004HN is an integrated downconvertor for use in Low Noise Block (LNB) convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system. This alignment-free concept replaces


    Original     		TFF1004HN TFF1004HN BFU725F UAF3000 9.75 GHz oscillator LNB down converter for Ku band ku-band lnb satellite lnb ku UAF3000TS ku-band pll lnb transistor k 975 DRO lnb mixer lnb PDF

    ATC 118

    Abstract: ATC 116 FEI Microwave
    Text: T A B L E O F C O N T E N T S Introduction and General Specifications .2 - 7 Introduction .2 - 3


    Original     		PDF

    Pldro

    Abstract: dielectric resonator oscillator PLDRO-10-7000-5P
    Text: M/TQS00216 ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR :EATURES • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design


    OCR Scan     		M/TQS00216 MITQS00216 Pldro dielectric resonator oscillator PLDRO-10-7000-5P PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    Frequency multiplier

    Abstract: "Step Recovery Diode" MSA-08XX HSMP-3820 HSMP-3822 x5 frequency multiplier frequency multiplier 1 mhz step recovery diode pin diode microstrip "frequency tripler"
    Text: Low Cost Frequency Multipliers Using Surface Mount PIN Diodes Application Note 1054 Introduction PIN switching diodes with low values of transition time can multiply frequencies up to C-band similar to step recovery diodes SRD . These diodes are available in the low-cost SOT-23


    Original     		OT-23 MSA-08XX 5091-4918E 5966-4998E Frequency multiplier "Step Recovery Diode" MSA-08XX HSMP-3820 HSMP-3822 x5 frequency multiplier frequency multiplier 1 mhz step recovery diode pin diode microstrip "frequency tripler" PDF

    dielectric resonator oscillator

    Abstract: PLDRO-10-7000-5P DIELECTRIC COAXIAL RESONATOR PLDRO-13
    Text: PLDRO SERIES FEATURES • • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design


    Original     		D-296 dielectric resonator oscillator PLDRO-10-7000-5P DIELECTRIC COAXIAL RESONATOR PLDRO-13 PDF

    PLDRO-10-7000-5P

    Abstract: No abstract text available
    Text: PLDRO SERIES FEATURES • • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design


    Original     		D-296 PLDRO-10-7000-5P PDF

    MSA-08XX

    Abstract: Frequency Multipliers x5 hsmp-3822 x5 frequency multiplier comb generator pin diode microstrip HSMP-3820 Dielectric Resonator Oscillator DRO frequency multiplier X3 "Step Recovery Diode"
    Text: Low Cost Frequency Multipliers Using Surface Mount PIN Diodes Application Note 1054 Introduction PIN switching diodes with low values of transition time can multiply frequencies up to C-band similar to step recovery diodes SRD . These diodes are available in the low-cost SOT-23 package. Several


    Original     		OT-23 5091-4918E 5966-4998E MSA-08XX Frequency Multipliers x5 hsmp-3822 x5 frequency multiplier comb generator pin diode microstrip HSMP-3820 Dielectric Resonator Oscillator DRO frequency multiplier X3 "Step Recovery Diode" PDF

    HP STEP RECOVERY DIODES

    Abstract: MSA-08XX Frequency Multipliers x5 Frequency multiplier frequency multiplier 1 mhz HSMP-3822 comb generator
    Text: Low Cost Frequency Multipliers Using Surface Mount PIN Diodes Application Note 1054 Introduction PIN switching diodes with low values of transition time can multiply frequencies up to C-band similar to step recovery diodes SRD . These diodes are available in the low-cost SOT-23


    Original     		OT-23 5091-4918E 5966-4998E HP STEP RECOVERY DIODES MSA-08XX Frequency Multipliers x5 Frequency multiplier frequency multiplier 1 mhz HSMP-3822 comb generator PDF

    ALT-4975-C

    Abstract: No abstract text available
    Text: Passive & Control Components Equipment and Components for the RF & Microwave Industry Active Components Oscillators www.AtlanTecRF.com Connectors, Cable and Cable Assemblies Noise Generators Satellite Communications Equipment Custom Equipment Sub-Assemblies


    Original     		PDF

    MwT GaAs Device Technology

    Abstract: Gunn Diode gunn effect fet dro 10 ghz system on chip x-band x-band dro
    Text: MicroWave Technology, Inc. GENERAL INFORMATION MwT’s GaAs Device Technology MicroWave Technology Inc. was established in 1982 by two senior technologists with years of hands-on experiences in Gallium Arsenide GaAs epitaxial material growth and microwave device design and processes.


    Original     		PDF

    MICROWAVE ASSOCIATES

    Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
    Text: n/A-COn ADVANCED Sfl DE J S b 4 E l f l 3 □□□□017 T jp D J- 3t~Z? MfoCCA MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of low power Schottky barrier gate devices with a 1


    OCR Scan     		MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600 PDF