9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high
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IRF830A
IRF830B
Power247TM,
sss4n60a
IRFS634A
IRFS630A
SSP4N60A
irf640b
SSS7N60A
IRFU210A
SSP7N60A
IRF634B
IRF840A china
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MTM4N45
Abstract: fet irf830 MTP4N45 IRF830
Text: IRF830 Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com
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IRF830
r14525
IRF830/D
MTM4N45
fet irf830
MTP4N45
IRF830
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fet irf830
Abstract: MTM4N45
Text: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds
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IRF830
IRF830/D
fet irf830
MTM4N45
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IRFBE40
Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800
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IRFK2D054
IRFK2D150
IRFK2D250
IRFK2D350
IRFK2D450
IRFK2DC50
IRFK2DE50
IRFK3D150
IRFK3D250
IRFK3D350
IRFBE40
IRFBG40
MOSFET IRF460
IRLC140
irfc9024
IRFBF40
irlc120
IRLC014
IRFC9034
IRLC034
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC f X S T F S / R F . bflF J> • b3b72S4 00^0440 00Ö ■ M O T b MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA IRF830 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for high
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OCR Scan
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b3b72S4
IRF830
Sy20AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
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SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
SSD2104
irfm014
SSP80N06
IRFU210A
IRFI530A
SSS7N60A
IRFU*230A
sss7n60a 951
SSP2N60A
IRF640A
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irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
irf1740
IRL244
IRF1740A
ks 0550
IRL244A
IRFZ34A
SSH6N80A
IRF634A
irfs750
IRFS640
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power MOSFET IRF740 driver circuit
Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730
Text: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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Untitled
Abstract: No abstract text available
Text: PD -97671 IRF8308MPbF IRF8308MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V l Dual Sided Cooling Compatible
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IRF8308MPbF
IRF8308MTRPbF
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IRF8306M
Abstract: irf8306
Text: PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
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IRF8306MPbF
IRF8306MTRPbF
IRF8306M
irf8306
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Untitled
Abstract: No abstract text available
Text: PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
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IRF8306MPbF
IRF8306MTRPbF
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IRF830
Abstract: No abstract text available
Text: IRF830 Iß ANSYS Power Field Effect Tïansistor aiCTRomcs LIMITED N-Channel Enhancement Mode • Silicon Gate for Fast Switching Speeds • Low R d s oii to Minimize On-Losses, Specified at Elevated Temperature • Rugged — SO A is Power Dissipation Limited
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IRF830
IRF830
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Untitled
Abstract: No abstract text available
Text: IRF8306MPbF l RoHS Compliant Containing No Lead and Halogen Free HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
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IRF8306MPbF
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IRF8302M
Abstract: No abstract text available
Text: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free HEXFET Power MOSFET plus Schottky Diode Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible
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IRF8302MPbF
IRF8302M
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IRF8302M
Abstract: No abstract text available
Text: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V
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IRF8302MPbF
IRF8302MTRPbF
IRF8302M
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Untitled
Abstract: No abstract text available
Text: IRF8308MPbF DirectFET Power MOSFET RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
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IRF8308MPbF
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IRF8302M
Abstract: IRF8302MTRP
Text: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V
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IRF8302MPbF
IRF8302MTRPbF
IRF8302M
IRF8302MTRP
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IRF470
Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0
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IRF331
O-204AA/TO-3
IRF332
2N6012
O-247
IRFP352R
IRFP353R
IRF470
IRFP240R
IRF840CF
IRF449
IRF340A
irf520 power
IRF341R
IRFP20
irf460 to-247
IRF331R
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Malouyans
Abstract: RF830 Spice 2 computer models for hexfets HEXFETs FETs HEXFET SPICE VQE 22 AN-975B
Text: APPLICATIO N NOTE 975B SPICE Computer Models for HEXFET Power MOSFETs HEXFET is a trademark of International Rectifier by S. Malouyans Introduction an accurate m ethod o f representing the variation in C g j. However, this m ust be achieved w ithout m aking excessive
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IRF530
IRF830
AN-975B
Malouyans
RF830
Spice 2 computer models for hexfets
HEXFETs FETs
HEXFET SPICE
VQE 22
AN-975B
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TRANSISTOR SMD 58W
Abstract: smd transistor E21 PC-B2510-T1 TRANSISTOR SMD 58W 87 PC-B4317-L1 pc-b2510 PFc CIRCUIT ml4822 ZVS DRIVER P-44317-EC p-44317
Text: June 1996 Application Note 42032 ML4822 Power Factor Correction With Zero Voltage Resonant Switching INTRODUCTION The boost converter is a popular topology for improved power factor and reduced line harmonics, as specified in IEC 555-2 and other more recent standards. With this
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ML4822
TRANSISTOR SMD 58W
smd transistor E21
PC-B2510-T1
TRANSISTOR SMD 58W 87
PC-B4317-L1
pc-b2510
PFc CIRCUIT ml4822
ZVS DRIVER
P-44317-EC
p-44317
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diode IN5818 equivalent
Abstract: TRANSISTOR SMD 58W IN4747A smd diode 101a WIMA FKP1 smd 58w P-44317-EC fan4822 wima fkp1 b2 saturable core oscillator
Text: www.fairchildsemi.com Application Note 42032 FAN4822 Power Factor Correction With Zero Voltage Resonant Switching Introduction The boost converter is a popular topology for improved power factor and reduced line harmonics, as specified in IEC 555-2 and other more recent standards. With this solution
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FAN4822
AN30042032
diode IN5818 equivalent
TRANSISTOR SMD 58W
IN4747A
smd diode 101a
WIMA FKP1
smd 58w
P-44317-EC
wima fkp1 b2
saturable core oscillator
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