FF 150 R 1200 kf igbt
Abstract: FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ circuit of six pack module igbt FS-100 r 12 FZ 75 IGBT FZ 1200 IGBT FZ 600 IGBT module FZ 1200
Text: IGBT Standard Modules Type VCES V IGBT-Standardmodule IC A ICRM A VCEsat V ton µs ts µs tp = 1 ms tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. tf µs RthJC tvj max °C/W °C tvj=25°C per arm typ. Dual modules n FF 15 R 12 KF 1200 15 30 3,0 0,4 0,50 0,20
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IF1400
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 16 KF6 - B1 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 16 40 2,5 deep C2 53 18 G2 44 2,5 deep 57 E1 C2 C1 E2 E1
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FF600R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6C B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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FF600R17KF6CB2
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FF600R17KF6B2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF600R17KF6B2
FF600R17KF6B2
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FF 400 R 14
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FF66B2
FF 400 R 14
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FF800R1
Abstract: DIODE B2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF800R17KF6C
FF800R1
DIODE B2
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FF600R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6C B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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POWERSEM
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FF86B2
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034 diode
Abstract: FF800R17KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF800R17KF6B2
Abstract: FF800R17KF6-B2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF800R17KF6B2
FF800R17KF6B2
FF800R17KF6-B2
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6C B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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FF600R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 17 KF6C B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
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Untitled
Abstract: No abstract text available
Text: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module
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300R12tCF2
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IGBT FZ 1200 kf1
Abstract: 600R16KF4 bs 1600
Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7
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600R16KF4
00021SS
IGBT FZ 1200 kf1
bs 1600
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IGBT FZ 1200 kf1
Abstract: 600R12KF4
Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7
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600R16KF4
00021SS
IGBT FZ 1200 kf1
600R12KF4
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FZ 77 1000
Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Text: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5
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IGBT FF 300 R 12 KF2
Abstract: FZ 77 1000 igbt ff 75 r IGBT FZ 1200 FF 100 R 12 kf2 igbt FZ200
Text: IGBT modules Type VcES le A V IcRM v C E sat. ton ts R th J C DC per arm = tvj max tv ,= tvi = tvi 1 rrs 25 °C, typ. 25 °C, typ. 25 °C, typ. 25 °C, typ. A V US |iS |JS °C/W °c tvi O utline Dual m odules 15 R 12 KF 1200 15 30 3 0,4 0,5 0,2 1 150 63 25 R 06 KF2
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eupec FZ 50 A 12 KF
Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF
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D0DG122
eupec FZ 50 A 12 KF
IGBT FF 300
fz 69
FZ 300 R 06 KL
kl 50
eupec FZ 800 R 16
Eupec fz 1200 r 12
FZ15A10KN
FF 75 R 1200 kl igbt
eupec FS 25 R 12 KL
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IGBT FF 300
Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF
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D0DG122
IGBT FF 300
eupec FZ 50 A 12 KF
FZ 75
eupec FZ 800 R 16
fz 69
eupec FS 25 R 12 KL
eupec igbt 400 A
FZ200
Eupec fz 1200 r 12
50/R005 FZ
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FS150R12KF4
Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51
Text: IGBT High-Power Module Type Range status o f sam ple availability 4 □ production • prototype. + ENG sam ples. BMOaai? 00Q25G4 fill # 1 . Q '9 8 O 2. Q '98 IGBT High Power Modules T ype Dual modules FF200R 33KF1 FF 400 R 12 KF4 FF 400 R 16 KF4 FF 400 R 1 7 K F 4
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140x73mm
140x130
140x190
3M03HT
00G2S07
FS150R12KF4
IGBT module FZ 1200
FF 400 R 14
FS200R12KF4
400R12K
DIODE e2l
IGBT module FZ 1200 R17kf4
igbt F4 400 R 12 KF4
IGBT FZ 800R12kF4
FZ 51
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