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    140X130 Price and Stock

    Schmalz VCBL-B-140X130X48

    Vacuum block; VCBL-B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME VCBL-B-140X130X48 1
    • 1 $127.88
    • 10 $112.83
    • 100 $112.83
    • 1000 $112.83
    • 10000 $112.83
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    Schmalz VCBL-S4-140X130X50

    Vacuum block; VCBL-S4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME VCBL-S4-140X130X50 1
    • 1 $161.95
    • 10 $142.89
    • 100 $142.89
    • 1000 $142.89
    • 10000 $142.89
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    Schmalz VCSP-O-140X130X18.3

    Suction-plate for vacuum block; 130x140x18.3mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME VCSP-O-140X130X18.3 1
    • 1 $37.97
    • 10 $33.49
    • 100 $33.49
    • 1000 $33.49
    • 10000 $33.49
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    Schmalz VCSP-O-140X130X16.5

    Suction-plate for vacuum block; 140x130x16.5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME VCSP-O-140X130X16.5 1
    • 1 $24.36
    • 10 $21.49
    • 100 $21.49
    • 1000 $21.49
    • 10000 $21.49
    		Get Quote

    Schmalz VCBL-B-140X130X29

    Vacuum block; VCBL-B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME VCBL-B-140X130X29 1
    • 1 $102.09
    • 10 $90.08
    • 100 $90.08
    • 1000 $90.08
    • 10000 $90.08
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    140X130 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Mounting of the IGBT-High-Power-Modules 140x130mm The contact surfaces of module and heatsink must be free from damage and contamination. A thin and uniform film of thermal compound should be applied to the contact area before mounting. A recommended method is applying the thermal compound with rollers or spatulas to the surface of the module or the heatsink. The quantity of thermal compound is sufficient if a small rim can be observed around the mounted module.


    Original     		PDF 140x130mm D-59581 140x130

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40

    IGD515EI

    Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
    Text: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach


    Original     		PDF D-59581 D-81541 IGD515EI IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3

    H128M

    Abstract: STC128M TO92S 128M4
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 128M 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-02 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2


    Original     		PDF 100mm C060AJ-02 STC128MH128M O-92S 400mW 20VIE 100mA H128M STC128M TO92S 128M4

    transistor 8550

    Abstract: h8550 8550 pnp transistor S8550
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8550 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A060AJ-00 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2


    Original     		PDF 100mm A060AJ-00 S8550H8550 -35VIE -100mA -800mA -10mA -800mAIB -80mA transistor 8550 h8550 8550 pnp transistor S8550

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    Eupec Power Semiconductors

    Abstract: AN2002-07 module RBSOA
    Text: APPLICATION NOTE Date: 02.12.13 Page 1 of 3 AN-Number: AN2002-13 replaces AN2002-07 Mounting instructions for IHM & IHV modules • handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal


    Original     		PDF AN2002-13 AN2002-07) D-59581 Eupec Power Semiconductors AN2002-07 module RBSOA

    mosfet base induction heat circuit

    Abstract: mitsubishi electric igbt module mitsubishi induction traction motor IGBT module FZ IGBT parallel igbt for HIGH POWER induction heating Igbt base induction heat circuit ieee 1000 POWEREX igbtmod igbtmod mitsubishi
    Text: The Latest Advances in Industrial IGBT Module Technology Eric R. Motto John F. Donlon Application Engineering Powerex Inc. Youngwood PA, USA Application Engineering Powerex Inc. Youngwood PA, USA Abstract— More than ten years have elapsed since IGBT modules


    Original     		PDF

    IGD-1-EP515

    Abstract: IGD-1-DT515 IGD-1-DT2
    Text: Click on outline no. IGBT Driver Boards V DC control type channels interface average/ peak V ISO I GM POUT size V A W mm*mm for modules outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1 ±8


    Original     		PDF 140x130 140x190 121700-240F-TO IGD-1-EP515 1200/1700-440F-TO 1200/1700-180W-TO 1200/1700-410W-TO IGD-1-EP515 IGD-1-DT515 IGD-1-DT2

    140X130

    Abstract: AN2002-07 module RBSOA
    Text: APPLICATION NOTE Date: 2002-06-10 Page 1 of 2 AN-Number: AN2002-07 Mounting instructions for IHM & IHV modules handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal


    Original     		PDF AN2002-07 140X130 AN2002-07 module RBSOA

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A

    h8550 transistor

    Abstract: h8550 Transistor 25V 1.5A, 1W NPN S8550 s8550 npn transistor TO-92 S8550 S8550 transistor s8550
    Text: NPN 汕头华汕电子器件有限公司 SILICON 对应国外型号 S8550 H8550 █ 芯片简介 TRANSISTOR █ 芯片图 芯片尺寸：4 英寸（100mm） 芯片代码：A063AJ-00-XXX 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm；E 极 140×130µm


    Original     		PDF S8550 H8550 100mm A063AJ-00-XXX -100mA -800mA -10mA -800mA, -80mA h8550 transistor h8550 Transistor 25V 1.5A, 1W NPN S8550 s8550 npn transistor TO-92 S8550 S8550 transistor s8550

    TRANSISTOR 8050

    Abstract: H8050 S8050 hFE 8050 transistor NPN TO-92 Vebo6v
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8050 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-00 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2


    Original     		PDF 100mm C060AJ-00 S8050H8050 35VIE 100mA 800mA 800mAIB 10VIC TRANSISTOR 8050 H8050 S8050 hFE 8050 transistor NPN TO-92 Vebo6v

    100N

    Abstract: 250N AN2004-05 NM1515
    Text: Application Note Date: 19.01.2007 AN-Number: AN2004-05 replaces AN2002-13 Page 1 Mounting instructions for IHM and IHV modules Introduction This application note should give recommendations regarding the characteristics of different thermal pastes, how a paste could be applied and how modules have to be


    Original     		PDF AN2004-05 AN2002-13 D-59581 /-100N /-20N 100N 250N AN2004-05 NM1515

    M28S

    Abstract: HM28S transistor m28s transistor NPN TO-92 Vebo6v
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR M28S 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-01 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2


    Original     		PDF 100mm C060AJ-01 M28SHM28S 850mW 100mA 300mA 500mA 600mAIB M28S HM28S transistor m28s transistor NPN TO-92 Vebo6v

    ZENERDIODEN

    Abstract: AN2002-07
    Text: APPLICATION NOTE Datum: 2002-06-10 Seite 1 von 2 AN-Nummer: AN2002-07 Montagehinweise für IHM & IHV Module Handhabung IGBTs sind elektrostatisch empfindliche Bauelemente. Während des Einbaus der Module sind Gate und Hilfsemitter durch eine leitende Verbindung kurzzuschließen, um eine Zerstörung durch statische


    Original     		PDF AN2002-07 ZENERDIODEN AN2002-07

    2SD106AI-17

    Abstract: 2SD315AI 2SD106AI 2SD106A FZ1200R33KF1 1SD418 IGD-1-DT515 1SD418FI-FZ800R33KF2 FZ800R33KF2 igd 515
    Text: Treiber für IGBT und Power Mosfet Drivers for IGBTs and Power Mosfets No. of Gate Channels Voltage Type IGBT max. VCE VISO Ipeak 2SD106AI 2 +/- 15 V 1200 V 2500 V 6A 2SD106AI-17 2 +/- 15 V 1700 V 4000 V 6A 6SD106EI 6 +/- 15 V 1200 V 2500 V 6A 6SD106EI-17


    Original     		PDF 2SD106AI 2SD106AI-17 6SD106EI 6SD106EI-17 2SD315AI 2SD315AI-25 2SD315AI-33 1SD418FI-FZ2400R17KF6-B2 1SD418FI-FZ800R33KF1 1SD418FI-FZ800R33KF2 2SD106AI-17 2SD315AI 2SD106AI 2SD106A FZ1200R33KF1 1SD418 IGD-1-DT515 1SD418FI-FZ800R33KF2 FZ800R33KF2 igd 515

    cm500ha-34a

    Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
    Text: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using


    Original     		PDF

    1K2A1

    Abstract: DFM600FXM18
    Text: p o w e rlin e frd modules F a st R e co v e ry D io d e FRD M o d u le s Generic Part Number (for u s e with Current Rating M o d u le s) ig b t Voltage Grade V *RRM (V) (A) DFM300LXM18 DFM600LXM18 DFM600FXM18 DFM900FXM18 DFM1200FXM18 1800 1800 1800 1800


    OCR Scan     		PDF DFM300LXM18 DFM600LXM18 DFM600FXM18 DFM900FXM18 DFM1200FXM18 DFM400PXM33 DFM400NXM33 DFM800NXM33 DFM1200NXM33 108x62) 1K2A1

    DIN 46200

    Abstract: V61-14 D 3501 N 42 T d1dt NT398 GEZ DIODES v72-26-120m T2551N V72-26 T188F
    Text: Clamping Force kN an d D is c D ia m e te r (m m ) Phase control thyristors Typ kN Rectifier diodes Phase control thyristors mm Typ kN mm Typ kN Fast rectifier diodes mm T 178 N T 201 N 2 ,5 -5 7 -1 2 41 58 T 2001 N 3 6 -5 2 120 D 428 N 3 ,2 -7 ,6 41 T 2006 N


    OCR Scan     		PDF

    igd-1-ep

    Abstract: IGBT 1200V 1 GBT 400 A 1200V IHD 660
    Text: IGBT Driver Boards IGBT Treiber control channels interface type V DC average/ peak v ISO V ]GM A size POUT W by for modules mounting mm*mm outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1


    OCR Scan     		PDF sc1700 igd-1-ep IGBT 1200V 1 GBT 400 A 1200V IHD 660

    108X62

    Abstract: No abstract text available
    Text: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV)


    OCR Scan     		PDF GP250MHB06S GP350MHB06S GP500LSS06S GP200MHS12 GP200MKS12 GP200MLS12 DIM400DDM12 DIM400LSS12 DIM800DDM12 DIM800FSM12 108X62