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    M28S Price and Stock

    onsemi ARX383CSSM28SMKA0-CR

    LINEAR IC
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    DigiKey ARX383CSSM28SMKA0-CR Bulk 3,000 1
    • 1 $11.23
    • 10 $7.861
    • 100 $6.0232
    • 1000 $5.02948
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    Newark ARX383CSSM28SMKA0-CR Bulk 3,000
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    onsemi ARX383CSSM28SMKA0-CP

    LINEAR IC
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    DigiKey ARX383CSSM28SMKA0-CP Bulk 2,980 1
    • 1 $11.68
    • 10 $7.992
    • 100 $5.9361
    • 1000 $5.525
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    Newark ARX383CSSM28SMKA0-CP Bulk 3,000
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    onsemi AR0144CSSM28SUD20-RC1

    IMAGE SENSOR CMOS 1MP 1/4 CIS SO
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    DigiKey AR0144CSSM28SUD20-RC1 Bulk 2,579 1
    • 1 $11.56
    • 10 $9.245
    • 100 $7.3963
    • 1000 $6.934
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    Newark AR0144CSSM28SUD20-RC1 Bulk 2,550
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    onsemi AR0234CSSM28SUKA0-CR

    2MP 1/3 CIS SO
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    DigiKey AR0234CSSM28SUKA0-CR Tray 2,100 1
    • 1 $41.34
    • 10 $34.45
    • 100 $29.52875
    • 1000 $29.52875
    • 10000 $29.52875
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    Newark AR0234CSSM28SUKA0-CR Bulk 2,100
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    Bristol Electronics AR0234CSSM28SUKA0-CR 894
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    Chip1Stop AR0234CSSM28SUKA0-CR 1,970
    • 1 $128
    • 10 $128
    • 100 $63.4
    • 1000 $42.2
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    EBV Elektronik AR0234CSSM28SUKA0-CR 38 Weeks 2,100
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    Wuhan P&S AR0234CSSM28SUKA0-CR 1,970 1
    • 1 $67.95
    • 10 $67.95
    • 100 $43.37
    • 1000 $32.88
    • 10000 $32.88
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    onsemi AR0234CSSM28SUKA0-CP

    2MP 1/3 CIS SO
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    DigiKey AR0234CSSM28SUKA0-CP Tray 1,983 1
    • 1 $39.43
    • 10 $32.861
    • 100 $28.16688
    • 1000 $28.16688
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    Newark AR0234CSSM28SUKA0-CP Bulk 2,100
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    Rochester Electronics AR0234CSSM28SUKA0-CP 1,187 1
    • 1 $27.11
    • 10 $27.11
    • 100 $25.49
    • 1000 $23.05
    • 10000 $23.05
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    Avnet Asia AR0234CSSM28SUKA0-CP 26 Weeks 2,100
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    Avnet Silica AR0234CSSM28SUKA0-CP 27 Weeks 2,100
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    Chip1Stop AR0234CSSM28SUKA0-CP 5,627
    • 1 $116
    • 10 $116
    • 100 $54.5
    • 1000 $36.3
    • 10000 $36.3
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    EBV Elektronik AR0234CSSM28SUKA0-CP 28 Weeks 2,100
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    Wuhan P&S AR0234CSSM28SUKA0-CP 5,627 1
    • 1 $64.81
    • 10 $64.81
    • 100 $41.37
    • 1000 $31.36
    • 10000 $31.36
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    M28S Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M28S Galaxy Semi-Conductor Holdings NPN Silicon Epitaxial Planar Transistor Original PDF
    M28S Unknown Mini size of Discrete semiconductor elements Original PDF
    M28S Unisonic Technologies AUDIO OUTPUT DRIVER AMPLIFIER Original PDF
    M28SB74 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    M28SH72 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    M28S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original
    PDF OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S

    M28S

    Abstract: transistor m28s
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original
    PDF OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S transistor m28s

    M28S

    Abstract: M28S Equivalent transistor m28s
    Text: MCC TM Micro Commercial Components M28S M28S-B M28S-C M28S-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A


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    PDF M28S-B M28S-C M28S-D 625Watts -55OC M28S M28S Equivalent transistor m28s

    M28ST

    Abstract: No abstract text available
    Text: M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE 1 Product-Rank M28ST-B


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    PDF M28ST M28ST-B M28ST-C M28ST-D 100mA 300mA 29-May-2012 600mA, 30MHz M28ST

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD M28S NPN SILICON TRANSISTOR AU DI O OU T PU T DRI V ER AM PLI FI ER 1 ̈ FEAT U RES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation ̈ 3 APPLI CAT I ON 1 * Audio Output Driver Amplifier * General Purpose Switch


    Original
    PDF OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SG-x-AE3-R

    transistor m28s

    Abstract: No abstract text available
    Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE


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    PDF QW-R201-015 transistor m28s

    M28S Equivalent

    Abstract: transistor m28s M28S
    Text: DC COMPONENTS CO., LTD. M28S DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose "Speech Synthesizer" Voice ROM IC audio output driver stage amplifier applications. TO-92 Pinning


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    PDF 600mA, M28S Equivalent transistor m28s M28S

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1  FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation  3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original
    PDF OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K QW-R201-015

    M28S

    Abstract: transistor m28s NPN Silicon Epitaxial Planar Transistor
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z High DC current gain. M28S Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23 ORDERING INFORMATION


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    PDF OT-23 BL/SSSTC058 3000/Tape M28S transistor m28s NPN Silicon Epitaxial Planar Transistor

    M28S

    Abstract: M28S Equivalent 10VDC
    Text: M28S Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC


    Original
    PDF 625Watts -55OC 100mAdc, 300mAdc, 500mAdc, 600mAdc, 20mAdc) 10Vdc, 50mAdc, 30MHz) M28S M28S Equivalent 10VDC

    M28S

    Abstract: M28S Equivalent m28s transistor
    Text: M28S M28S TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 0.625 PCM: 2. COLLECTOR W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ:


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    PDF 100mA 300mA 500mA 600mA, 30MHz M28S M28S Equivalent m28s transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 M28S TRANSISTOR NPN 1.EMITTER FEATURES z High DC Current Gain and Large Current Capability 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF 100mA 300mA 500mA 600mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO:


    Original
    PDF OT-23 OT-23 100mA 300mA 500mA 600mA, 30MHz

    M28S

    Abstract: No abstract text available
    Text: M28S 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Excellent hFE Linearity High DC Current Gain A L 3 3 C B Top View CLASSIFICATION OF hFE 1


    Original
    PDF OT-23 M28S-B M28S-C M28S-D 15-Jul-2011 100mA 300mA 500mA 600mA, M28S

    M28S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original
    PDF OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K M28S

    M28S

    Abstract: HM28S transistor m28s transistor NPN TO-92 Vebo6v
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR M28S 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:C060AJ-01 芯片厚度:240±20µm 管芯尺寸:600x600µm 2 焊位尺寸:B 极 130×150µm 2;E 极 140×130µm 2


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    PDF 100mm C060AJ-01 M28SHM28S 850mW 100mA 300mA 500mA 600mAIB M28S HM28S transistor m28s transistor NPN TO-92 Vebo6v

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURE Power dissipation mW (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: 1.25 A Collector-base voltage


    Original
    PDF OT-23 OT-23 100mA 300mA 500mA 600mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage


    Original
    PDF OT-23 100mA 300mA 500mA 600mA,

    M28S

    Abstract: transistor m28s
    Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE


    Original
    PDF 600mA QW-R201-015 M28S transistor m28s

    m28s-d

    Abstract: M28SD
    Text: MCC TM Micro Commercial Components Features • • • • • • • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Epoxy meets UL 94 V-0 flammability rating


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    PDF M28S-B M28S-C M28S-D 625Watts -55OC m28s-d M28SD

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


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    PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1


    Original
    PDF M28S-B M28S-C M28S-D 625Watts -55OC

    Untitled

    Abstract: No abstract text available
    Text: M28S SEMICONDUCTOR FORWARD INTBRNAUONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Package: TO-92 * High Dc Current Gain Hfe=1000 * Collector Dissipation Pc=lW ABSOLUTE MAXIMUM RATINGS a t Tamb=25*C


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    PDF 100uA 100mA 800mA 800mA

    M28S

    Abstract: No abstract text available
    Text: M C C TO-92 Plastic-Encapsulate Transistors M28S TRANSISTOR NPN FEATURES stlon P cm: T O -9 2 1 .E M IT T E R IcM: • M 2 .C O L LE C TO R 0.625W (Tamb=25”C ) 1A # * » * voltage V (BR)CBO: 4 0 V 3 . BASE H M M d p i d storage Junction tem perature range


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    PDF