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    FZ1200R33KF2 Price and Stock

    Rochester Electronics LLC FZ1200R33KF2CNOSA1

    FZ1200R33KF2C - 3300 V, 1200 A S
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    DigiKey FZ1200R33KF2CNOSA1 Bulk 63 1
    • 1 $2803.93
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    Rochester Electronics LLC FZ1200R33KF2CS1NOSA1

    FZ1200R33KF2C - 3300 V, 1200 A S
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    DigiKey FZ1200R33KF2CS1NOSA1 Bulk 7 1
    • 1 $2367.2
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    Infineon Technologies AG FZ1200R33KF2CNOSA1

    IGBT MODULE 3300V 2000A
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    Rochester Electronics FZ1200R33KF2CNOSA1 39 1
    • 1 $2696.09
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    • 100 $2534.32
    • 1000 $2291.68
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    Infineon Technologies AG FZ1200R33KF2CNOSA4

    IGBT MODULE 3300V 2000A
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    Infineon Technologies AG FZ1200R33KF2CS1NOSA1

    IGBT MODULE 3300V 2000A
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    Rochester Electronics FZ1200R33KF2CS1NOSA1 7 1
    • 1 $2276.15
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    • 100 $2139.58
    • 1000 $1934.73
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    Find more FZ1200R33KF2 price and stock on Findchips.com

    FZ1200R33KF2 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FZ1200R33KF2 Eupec IGBT Power Module Original PDF
    FZ1200R33KF2-B5 Eupec IGBT Power Module Original PDF
    FZ1200R33KF2C Eupec IGBT Power Module Original PDF
    FZ1200R33KF2C Eupec IGBT - Module Original PDF
    FZ1200R33KF2C Infineon Technologies TRANS IGBT MODULE N-CH 3300V 2000A 9IH7 Original PDF
    FZ1200R33KF2CB3S2NDSA1 Infineon Technologies IGBT MODULE 3300V 2000A Original PDF
    FZ1200R33KF2C-B5 Eupec IGBT-Wechselrichter / IGBT-inverter Original PDF
    FZ1200R33KF2C-B5 Eupec IGBT Power Module Original PDF
    FZ1200R33KF2CNOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - MODULE IGBT A-IHV190-3 Original PDF
    FZ1200R33KF2CNOSA2 Infineon Technologies IGBT MODULE 3300V 2000A Original PDF
    FZ1200R33KF2CNOSA4 Infineon Technologies IGBT MODULE 3300V 2000A Original PDF
    FZ1200R33KF2CS1NOSA1 Infineon Technologies FZ1200R33KF2C - 3300 V, 1200 A S Original PDF

    FZ1200R33KF2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FZ1200R33KF2C

    Abstract: HGAR MC54 tu00t
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C FZ1200R33KF2C HGAR MC54 tu00t

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R33KF2C IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage


    Original     		PDF FZ1200R33KF2C

    2SD 106 AI-17

    Abstract: scale driver 2SD 315 AI-25 IGD 515 ei 2SD 106 AI igd 515 IGD-1-DT2-515 2SD 315 AI-25 diode 50000v 2SD 315 AI-33 FZ1200R33KF2
    Text: IGBT Drivers Type No. of Channels 2SD 106 AI 2SD 106 AI-17 6SD 106 EI 6SD 106 EI-17 2SD 315 AI 2SD 315 AI-25 2SD 315 AI-33 1SD 418 FI-FZ2400R17KF6-B2 1SD 418 FI-FZ800R33KF2 1SD 418 FI-FZ1200R33KF2 2 2 6 6 2 2 2 1 1 1 Gate Voltage V +/- 15 +/- 15 +/- 15 +/- 15


    Original     		PDF AI-17 EI-17 AI-25 AI-33 FI-FZ2400R17KF6-B2 FI-FZ800R33KF2 FI-FZ1200R33KF2 SD1/87 SD3/87 2SD 106 AI-17 scale driver 2SD 315 AI-25 IGD 515 ei 2SD 106 AI igd 515 IGD-1-DT2-515 2SD 315 AI-25 diode 50000v 2SD 315 AI-33 FZ1200R33KF2

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    78A5A

    Abstract: FZ1200R33KF2C MC54
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C 78A5A FZ1200R33KF2C MC54

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40

    FZ1200R33KF2C

    Abstract: MC54
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C FZ1200R33KF2C MC54

    fz1200r33kf2c-b5

    Abstract: tk 69 FZ1200R33KF2C uv1800 k4369
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C_B5 Gehäuse vom 6,5kV Modul housing from 6,5kV Module Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original     		PDF FZ1200R33KF2C fz1200r33kf2c-b5 tk 69 uv1800 k4369

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


    Original     		PDF D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation

    2SD106AI

    Abstract: 1SD418FI-FZ1200R33KF2 2SD315AI FZ800R33KF1 2sd106ai17 FZ1200R33KF1 FZ800R33KF2 2SD106A 6SD106EI-17 2SD315AI-33
    Text: Drivers for IGBTs and Power Mosfets No. of Gate Channels Voltage Type IGBT max. VCE VISO Ipeak 2SD106AI 2 +/- 15 V 1200 V 2500 V 6A 2SD106AI-17 2 +/- 15 V 1700 V 4000 V 6A 6SD106EI 6 +/- 15 V 1200 V 2500 V 6A 6SD106EI-17 6 +/- 15 V 1700 V 4000 V 6A 2SD315AI


    Original     		PDF 2SD106AI 2SD106AI-17 6SD106EI 6SD106EI-17 2SD315AI 2SD315AI-25 2SD315AI-33 1SD418FI-FZ2400R17KF6-B2 1SD418FI-FZ800R33KF1 1SD418FI-FZ800R33KF2 2SD106AI 1SD418FI-FZ1200R33KF2 2SD315AI FZ800R33KF1 2sd106ai17 FZ1200R33KF1 FZ800R33KF2 2SD106A 6SD106EI-17 2SD315AI-33

    DD1200S33K2C

    Abstract: FZ1200R33KF2C BC 2500 ZL 8
    Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ &' *+ &' ( )*+ % / /+ $ % 4(! 6 17 ,- ( 9 ,8 4 ( ! 8 &' ( ! )*+ &' ( ! )*+ < ,-.


    Original     		PDF DD1200S33K2C DD1200S33K2C FZ1200R33KF2C BC 2500 ZL 8

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33K2C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C 连续正向直流电流


    Original     		PDF DD1200S33K2C

    Measurement of stray inductance for IGBT

    Abstract: Measurement of stray inductance igbt1 module RBSOA circuit of six pack module igbt RBSOA IGBT modules FZ FZ1200R33KF2 IGBT f4 E2 IGBT Modules
    Text: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Definition of the module stray inductance Ls Fig.1 shows the principle circuit of a half-bridge and the resulting voltage and current waveforms when switching IGBT1. The circuit stray inductance Lσ, shown as a concentrated element, represents all distributed inductances of capacitors, busbars and IGBT modules


    Original     		PDF D-59581 Measurement of stray inductance for IGBT Measurement of stray inductance igbt1 module RBSOA circuit of six pack module igbt RBSOA IGBT modules FZ FZ1200R33KF2 IGBT f4 E2 IGBT Modules

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    bsm25gp120 b2

    Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
    Text: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3


    Original     		PDF FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 bsm25gp120 b2 FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3

    HIGH VOLTAGE DIODE 3.3kv

    Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
    Text: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany


    Original     		PDF D-59581 D-81541 HIGH VOLTAGE DIODE 3.3kv 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv

    DD1200S33K2C

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1200S33K2C Diodeインバータ/Diode,Inverter 最大定格/MaximumRatedValues ピーク繰返し逆電圧 Repetitivepeakreversevoltage Tvj = 25°C


    Original     		PDF DD1200S33K2C DD1200S33K2C

    EN61140

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S33K2C Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C


    Original     		PDF DD1200S33K2C EN61140

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%62332364C3 &'6 6 *+ &'6(6 )*+


    Original     		PDF DD1200S33K2C 03265F 1231423567896AB2C3D6EF32

    FZ1200R33KF1

    Abstract: 1sd418fi-fz2400r17kf6-b2 1SD418FI-FZ1200R33KF2 FZ1200R33KF2 2SD315AI FZ800R33KF1 FZ2400R17KF6B2 6SD106EI-17 1SD418FI-FZ800R33KF1 sd32000
    Text: Drivers for IGBTs and Power Mosfets Treiber für IGBT und Power Mosfet IGBT No. of Gate Channels Voltage max. VCE Type V |S O ^peak 2SQ106AI 2 +1- 15 V 1200 V 2500 V 6 A 2SD106AI-17 2 + /• 15 V 1700 V 4000 V 6 A 6SD106EI 6 +/• 15 V 1200 V 2500 V 6A Power Out Outline remarks


    OCR Scan     		PDF 2SQ106AI 2SD106AI-17 6SD106EI 6SD106EI-17 2SD315AI 2SD315AI-33 1SD418FI-FZ2400R17KF6-B2 1SD418FI-FZ800R33KF1 1SD418FI FZ800R33KF2 FZ1200R33KF1 1SD418FI-FZ1200R33KF2 FZ1200R33KF2 FZ800R33KF1 FZ2400R17KF6B2 sd32000