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    FZ1200R33KF2C Price and Stock

    Rochester Electronics LLC FZ1200R33KF2CNOSA1

    FZ1200R33KF2C - 3300 V, 1200 A S
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    DigiKey FZ1200R33KF2CNOSA1 Bulk 63 1
    • 1 $2803.93
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    • 100 $2803.93
    • 1000 $2803.93
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    Rochester Electronics LLC FZ1200R33KF2CS1NOSA1

    FZ1200R33KF2C - 3300 V, 1200 A S
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    DigiKey FZ1200R33KF2CS1NOSA1 Bulk 7 1
    • 1 $2367.2
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    Infineon Technologies AG FZ1200R33KF2CNOSA1

    IGBT MODULE 3300V 2000A
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    Rochester Electronics FZ1200R33KF2CNOSA1 39 1
    • 1 $2696.09
    • 10 $2696.09
    • 100 $2534.32
    • 1000 $2291.68
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    Infineon Technologies AG FZ1200R33KF2CNOSA4

    IGBT MODULE 3300V 2000A
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    Infineon Technologies AG FZ1200R33KF2CS1NOSA1

    IGBT MODULE 3300V 2000A
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    Rochester Electronics FZ1200R33KF2CS1NOSA1 7 1
    • 1 $2276.15
    • 10 $2276.15
    • 100 $2139.58
    • 1000 $1934.73
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    Find more FZ1200R33KF2C price and stock on Findchips.com

    FZ1200R33KF2C Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FZ1200R33KF2C Eupec IGBT Power Module Original PDF
    FZ1200R33KF2C Eupec IGBT - Module Original PDF
    FZ1200R33KF2C Infineon Technologies TRANS IGBT MODULE N-CH 3300V 2000A 9IH7 Original PDF
    FZ1200R33KF2CB3S2NDSA1 Infineon Technologies IGBT MODULE 3300V 2000A Original PDF
    FZ1200R33KF2C-B5 Eupec IGBT-Wechselrichter / IGBT-inverter Original PDF
    FZ1200R33KF2C-B5 Eupec IGBT Power Module Original PDF
    FZ1200R33KF2CNOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - MODULE IGBT A-IHV190-3 Original PDF
    FZ1200R33KF2CNOSA2 Infineon Technologies IGBT MODULE 3300V 2000A Original PDF
    FZ1200R33KF2CNOSA4 Infineon Technologies IGBT MODULE 3300V 2000A Original PDF
    FZ1200R33KF2CS1NOSA1 Infineon Technologies FZ1200R33KF2C - 3300 V, 1200 A S Original PDF

    FZ1200R33KF2C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FZ1200R33KF2C

    Abstract: HGAR MC54 tu00t
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C FZ1200R33KF2C HGAR MC54 tu00t

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R33KF2C IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage


    Original     		PDF FZ1200R33KF2C

    78A5A

    Abstract: FZ1200R33KF2C MC54
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C 78A5A FZ1200R33KF2C MC54

    FZ1200R33KF2C

    Abstract: MC54
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C FZ1200R33KF2C MC54

    fz1200r33kf2c-b5

    Abstract: tk 69 FZ1200R33KF2C uv1800 k4369
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C_B5 Gehäuse vom 6,5kV Modul housing from 6,5kV Module Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


    Original     		PDF FZ1200R33KF2C fz1200r33kf2c-b5 tk 69 uv1800 k4369

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01


    Original     		PDF FZ1200R33KF2C

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


    Original     		PDF D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation

    DD1200S33K2C

    Abstract: FZ1200R33KF2C BC 2500 ZL 8
    Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ &' *+ &' ( )*+ % / /+ $ % 4(! 6 17 ,- ( 9 ,8 4 ( ! 8 &' ( ! )*+ &' ( ! )*+ < ,-.


    Original     		PDF DD1200S33K2C DD1200S33K2C FZ1200R33KF2C BC 2500 ZL 8

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33K2C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C 连续正向直流电流


    Original     		PDF DD1200S33K2C

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33K2C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C 连续正向直流电流


    Original     		PDF DD1200S33K2C

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    HIGH VOLTAGE DIODE 3.3kv

    Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
    Text: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany


    Original     		PDF D-59581 D-81541 HIGH VOLTAGE DIODE 3.3kv 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv

    EN61140

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S33K2C Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C


    Original     		PDF DD1200S33K2C EN61140

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%62332364C3 &'6 6 *+ &'6(6 )*+


    Original     		PDF DD1200S33K2C 03265F 1231423567896AB2C3D6EF32

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # %& ' * %& ' ()* $ / /* # $ 4'! 6 17 +, ' 9 +8 4 ' !


    Original     		PDF DD1200S33K2C

    FZ1200R33KF2C

    Abstract: igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r
    Text: MARKETING NEWS Date:2003-03-07 Page 1 of 2 MN-Number: MN2003-03 Introduction of the new 3.3kV EmCon-HDR Diode Due to new perceptions of eupec and Infineon in simulation and design, the lateral device structure of 3.3kV diodes could be improved. Thus we are able to expand the safe operation area SOA of the 3.3kV


    Original     		PDF MN2003-03 FZ1200R33KF2 FZ1200R33KF2C FZ1200R33KF2C D-59581 igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r