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    FFH30US30S Search Results

    FFH30US30S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FFH30US30S Fairchild Semiconductor TRANS IGBT CHIP N-CH 300V 75A 3TO-247 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF FGH50N3 FGH50N3 150oC.

    FFH30US30S

    Abstract: FGH50N3 LD26 TA49485
    Text: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF FGH50N3 FGH50N3 150oC. FFH30US30S LD26 TA49485

    smps igbt

    Abstract: FFH30US30S igbt 150v 30a
    Text: FGH50N3 300 V SMPS IGBT April 2013 FGH50N3 300 V SMPS IGBT General Description Features Using Fairchild 's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This


    Original     		PDF FGH50N3 FGH50N3 O-247 IC110 smps igbt FFH30US30S igbt 150v 30a