TRANSISTOR SMD MARKING CODE 5b
Abstract: transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR
Text: Philips Semiconductors 711Dfl2h DDbTBT? 743 M P H IN Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • QUICK REFERENCE DATA RF performance at Ts < 60 °C In a common emitter class-B test circuit see note 1 . Emitter-ballasting resistors for
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7110fl2tj
BLU86
OT223
OT223
TRANSISTOR SMD MARKING CODE 5b
transistor smd CF RQ
TRANSISTOR SMD MARKING CODE KF
smd transistor marking L6 NPN
SMD Transistor 7z
transistor marking smd 7z
5B smd transistor data
transistor SMD MARKING CODE HF
smd marking code SSs
SMD MARKING GP TRANSISTOR
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ffs transistor smd
Abstract: No abstract text available
Text: SG508 5ILICDN GENEF^L QUAD-NAND DRIVER U N EA R INTEGRATED CIRCUITS D E S C R IP T IO N FEATURES The SG508 is a Quad 2- Input N AND Driver with outputs capable of sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate
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SG508
500mA
MIL-STD-883
SG508
14-PIN
SG508H/883B
SG508H
ffs transistor smd
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smd code HF transistor
Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.
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71IDflgb
BLU86
OT223
OT223
smd code HF transistor
TRANSISTOR SMD MARKING CODE KF
transistor SMD t30
SMD Transistor t30
TRANSISTOR SMD MARKING CODE 5b
TRANSISTOR SMD MARKING CODE LK
TRANSISTOR SMD MARKING CODE XI
smd transistor marking K7
transistor SMD MARKING CODE HF
smd transistor marking L6 NPN
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Untitled
Abstract: No abstract text available
Text: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. PRELIMINARY DATASHEET Marking Code Temperature Range Type A E C HAL400SO 400A 400E 400C HAL401 SO 401A 401 E
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HAL400,
HAL401
HAL400SO
HAL401
HAL400
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ED 89A diode
Abstract: Micronas HA 24 hall effect sensor SOT-89x ED 89A marking code
Text: HAL320 Differential Hall Effect Sensor 1C in CMOS technology Introduction - reverse-voltage protection of V DD-pin - short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz The H AL320 is a differential Hall switch produced in
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HAL320
HAL320
OT-89x:
O-92UA:
ED 89A diode
Micronas HA 24
hall effect sensor
SOT-89x
ED 89A marking code
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MOTOROLA 3055V
Abstract: 3055VL 3055V
Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate
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MTD3055VL/D
MOTOROLA 3055V
3055VL
3055V
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BUK111-50GL
Abstract: BUK112-50GL smd transistor JJ
Text: Product specification Philips Semiconductors Logic level TOPFET SMD version of BUK112-50GL DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic SMD envelope, intended as a low side switch for automotive applications.
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BUK111-50GL
BUK112-50GL
OT426
BUK111-50GL
BUK112-50GL
smd transistor JJ
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Untitled
Abstract: No abstract text available
Text: SPP 46N03 Infineon technologias SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.015 n A 46 b V 30 • d v/df rated
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46N03
-T0220-3-1
67040-S
742-A
145-A
0235bG5
Q133777
SQT-89
B535bQ5
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Hall effect 215 DB
Abstract: HAL401
Text: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology PRELIMINARY DATASHEET Marking Code Type Release Notes: Revision bars indicate significant changes to the previous edition. Temperature Range III!!!!!! iiiiiiiiii c HAL400SO 400A 400E 400C HAL401SO
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HAL400,
HAL401
HAL400SO
HAL401SO
HAL400
HAL401
Hall effect 215 DB
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TB50N06V
Abstract: ot 112 TB50n
Text: MOTOROLA Order this document by MTB50N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM OSV™ M TB50N06V Motorola Preferred Device Pow er Field E ffect Transistor D2PAK for S u rface Mount N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB50N06V/D
TB50N06V
TB50N06V
ot 112
TB50n
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 02H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs
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TSF3N02HD/D
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06vl
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB30N06VL TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB30N06VL/D
TB30N06VL
06vl
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD1P40E/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor DPAK for S urface Mount P-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n
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TD1P40E/D
MTD1P40E/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD5N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD5N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TD5N25E/D
TD5N25E
MTD5N25E/D
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step motor em 483
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 32 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTB36N06V/D
MTB36N06V
step motor em 483
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TB50n
Abstract: No abstract text available
Text: MOTOROLA Order this docum ent by M TB50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOSV™ Power Field Effect Transistor D2PAK for S urface Mount MTB50N06VL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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TB50N06VL/D
MTB50N06VL/D
TB50n
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBDF1200Z/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M B D F1200Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs™ are an advanced series of power MOSFETs which
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MBDF1200Z/D
F1200Z
948J-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06VL TMOS V™ Power Field Effect Transistor D2PAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB52N06VL/D
MTB52N06VL
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M DF5N02Z/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF5N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel w ith M onolithic Zener ESD Protected G ate EZFETs™ are an advanced series of power MOSFETs which
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DF5N02Z/D
MMDF5N02Z
MDF5N02Z/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF10N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M S F10N 02Z Medium Power Surface Mount Products TMOS Single N -Channel w ith M onolithic Zener ESD Protected G ate M o to r o la P re fe rre d D e v ic e EZFETs are an advanced series of power MOSFETs which
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MMSF10N02Z/D
2PHX43416-0
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M SF10N02Z/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF10N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel w ith M onolithic Zener ESD Protected G ate EZFETs™ are an advanced series of power MOSFETs which
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SF10N02Z/D
SF10N
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12x16 font
Abstract: transistor SMD .v05
Text: INTEGRATED CIRCUITS o y e W M M Vm W M : SAA6721E SXGA RGB to TFT graphics engine Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors 1999 May 11 PHILIPS PHILIPS Philips Semiconductors Preliminary specification SXGA RGB to TFT graphics engine
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SAA6721E
545004/750/01/pp72
12x16 font
transistor SMD .v05
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DIODE BJE smd
Abstract: CLC420 CLC420AJ CLC420ALC CLC420AMC
Text: National Semiconductor CLC420 High-Speed, Voltage Feedback Op Amp General Description Features T he C L C 4 2 0 is an o p e ra tio n a l a m p lifie r d e s ig n e d for a p p lic a tio n s re q u irin g m a tch e d in p u ts , in te g ra tio n or transim pedance am plification. Utilizing voltage feedback
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CLC420
CLC420
300MHz
CLC420B
CLC730013
CLC730027
CLC420.
DIODE BJE smd
CLC420AJ
CLC420ALC
CLC420AMC
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SG1543
Abstract: transistor smd sG SG2543J SG3543 20-F SG2543 smd transistor 3U scr 20f
Text: GENERAL L IN E A R IN T E G R A T E D C IR C U IT S POWER SUPPLY OUTPUT SUPERVISORY CIRCUIT D E S C R IP T IO N FEA TU R ES This monolithic integrated circuit contains all the functions necessary to monitor and control the output ot a sophisticated power supply system. Over-voltage O.V. sensing
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SG1543/SG2543/SG3543
SG1543L
SG1543
transistor smd sG
SG2543J
SG3543
20-F
SG2543
smd transistor 3U
scr 20f
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