marking code C1H SMD
Abstract: sab-c501-l24p
Text: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)
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16-bit
P-DIP-40,
P-LCC-44
P-MQFP-44
SAB-C501
SAF-C501
C501-L/C501-1R
80C32/C52
80C52
fl235b05
marking code C1H SMD
sab-c501-l24p
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MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com
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T-75-37-07
235b05
82532N-TS
PL-CC-68
MARKING CODE SMD JW
TXC CXO
A51AC
isdn modem
2S34
chmn
m1p7
SAB-R3000
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SDA30C162
Abstract: 30C162 SDA 30C162 Siemens 3TB da 218 moy SMD NB18 30C163 adg smd NB b6 smd transistor
Text: SIEM ENS ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C163-2 Advanced Data Sheet 05.94 ÖB3SbQ5 0 0 ö0 5b 3 447 • SD A 30C163-2 Revision History: Original Version: 05.94 Previous Releases: Page Subjects changes since last revision
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30C163-2
30C163-2
0/A17
1/A18
A0-A15
ues04736
P35b05
fl23SbOS
SDA30C162
30C162
SDA 30C162
Siemens 3TB
da 218
moy SMD
NB18
30C163
adg smd
NB b6 smd transistor
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Untitled
Abstract: No abstract text available
Text: flSBSbOS GDIETME SIEMENS 2b? • PROFET BTS 430 K2 Smart Highside Power Switch Product Summary Features • Clamp of negative voltage at output 50 Vbb- Vout Avalanche Clamp • Short-circuit protection Vbb operation 4 .5 . . 32 • Current limitation -32
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fl235L05
TQ-220
BTS430K2
E3043
Q67060-S6200-A2
BTS430K2
E3043
Q67060-S6200-A3
O-220
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2165 CMOS 1C Preliminary Data 1.1 Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CO D EC functions
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P-LCC-28-R
P-DIP-28
fi235b>
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82c251
Abstract: No abstract text available
Text: 47E P • A235b05 DDBlEbS 1 « S I E G SAB 82C250/SAB 82C251 - P 5 * - M r \5 Advanced Peripheral Interface Controller SIEMENS AKTIENGESEL LSCHAF A dva nce Inform a tion • SAB 82C250: Dual channel asynchronous serial controller Fully programmable serial interface
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A235b05
82C250/SAB
82C251
82C250:
82C251:
16C450
16C452
16C451-compa
0031ST5
82C250/82C251
82c251
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 5-V Low-Drop Voltage Regulator TLE 4260 Preliminary Data Bipolar 1C Features • • • • • • • • • • • Low-drop voltage Very low quiescent current Low starting current consumption Integrated temperature protection Protection against reverse polarity
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Q67000-A8187
P-T0220-5-1
Q67000-A9044
P-T0220-5-2
AED00587
fl235t
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1051
OT-23
a23SbQS
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0s35
Abstract: b17 zener diode
Text: SIEMENS HITFET BTS 141 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^DS(on) 28 m£2 • Thermal Shutdown Current limit 25 A • Overload protection Nominal load current
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023SbDS
0s35
b17 zener diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 314405BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Hyper Page Mode - EDO • Performance: -50 -60 -70 ^RAC RAS access time
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314405BJ/BJL-50/-60/-70
fl23SbOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS 64fach-Silizium-Kreissegmentfotodiode mit sehr kleinem Dunkelstrom 64-Element Silicon Circular Array with Very Low Dark Current KOM 2059 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features
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64fach-Silizium-Kreissegmentfotodiode
64-Element
fi535bOS
0DS7704
HF01402
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23N05
Abstract: No abstract text available
Text: SPD 23N05 Infineon t« c h n o l o g ¡ o s i m p * o V e d R o ,°"’ SIPMOS PowerTransistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current
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23N05
SPD23N05
P-T0252
Q67040-S4152
SPU23N05
P-T0251
Q67040-S4132-A2
S35bQ5
Q133777
SQT-89
23N05
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