resistor 1005
Abstract: ERJ2GE
Text: Thick-Film Chip Resistor 1005 Anti-Sulfurated Thick Film Chip Resistor Expansion of variety of product Current size: 1608(0603 ,2012(0805) size) Industry/Field: Home appliance, Industrial equipment The chip resistor with a special construction to avoid open failure due to the presence of sulfur.
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Abstract: No abstract text available
Text: August 2010 Low Resistance Value Metal Plate Surface Mount Chip Resistor 0603 Low Resistance Value Metal Plate Surface Mount Chip Resistor Mobile communications Industry/Field: Wide range of products Suitable for current detection of power circuit of cellular phone
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ERJM03
5000pcs.
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"power supply circuits"
Abstract: RESISTOR 5025
Text: Thick-film chip resistor 3225 1210 size compact chip resistor with high-power and anti-surge characteristics Expansion of variety of product (Current size: 2012(0805), 3216(1206) size) electronics, Power supply circuits Industry/Field: Automotive Home appliance, Industrial equipment
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RKM 16
Abstract: RKM 9
Text: noHm Resistor Networks RM • RY A number of resistors are packed in a small package, for high density mounting. The excellent characteristics of thick film resistor are fully made by our designers who have long experience in this field. The result is a series of high performance, high reliable resistor network products.
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16pins
RKM 16
RKM 9
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Untitled
Abstract: No abstract text available
Text: Preliminary SIGC185T350R2CH IGBT Chip in Field stop-technology C FEATURES: • 3500V Field stop technology • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC185T350R2CH 3500V This chip is used for: • power modul
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SIGC185T350R2CH
SIGC185T350R2CH
Q67050-A4159sawn
7311M,
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178476
Abstract: 178476000 metal sensor EC000516
Text: Product catalogue | Sensor-Actuator-Interface SAI | SAI - active / field buses | Accessories | Terminating resistor General ordering data Order No. Part designation Version EAN Qty. 1784770000 SAIEND PB M12 5P B-COD Sensor/Actuator plug-in connector, straight,
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EC000516
SAI-BGM6/14
SAIBGM6/14-M23-9P
SAIBWM6/14
SAIBWM684760000
SAIBWM6/14-M23-9P
CAN-M12
SAIEND-PB-M23G-6
SAISGM6/14-M23-9P
178476
178476000
metal sensor
EC000516
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RML ROHM
Abstract: RKM 16 rkm6 rkm8l rkm8 RKM 9
Text: noHifi Resistor Networks RM • RY A number of resistors are packed in a small package, for high density mounting. The excellent characteristics of thick film resistors are designed by ROHM through long experience in this field. The result is a series of high performance, high reliable resistor network products.
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510il
10Kil
14pins
RML ROHM
RKM 16
rkm6
rkm8l
rkm8
RKM 9
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ic 7404 datasheet
Abstract: TPS40140 SLYT273 DV34 IC TRACE CODE ON BOX LABEL INFORMATION slyt274
Text: General Interest Texas Instruments Incorporated Spreadsheet modeling tool helps analyze power- and ground-plane voltage drops to keep core voltages within tolerance By Steve Widener Analog Field Applications Engineer Introduction Figure 1. Resistor sheet The trend toward smaller geometries in processor cores
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TMS320TCI648x
SLYT273
ic 7404 datasheet
TPS40140
SLYT273
DV34
IC TRACE CODE ON BOX LABEL INFORMATION
slyt274
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TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: P-CHANNEL MOSFET
Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD MARKING CODE 11
P-CHANNEL MOSFET
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3K04FS TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FS HIGH SPEED SWITCH APPLICATIONS Unit in mm With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive : V^h = 0.7—1.3 V Low Gate Threshold Voltage Small Package
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SSM3K04FS
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Untitled
Abstract: No abstract text available
Text: SP -1204 Bond Pad □ Buried Zener Nichrome Clear Field Area N+ /P+ Diode | j P-JFET Q DBNPN I DBPNP ( | ) MNPN [j Pinch Resistor @ MPNP 4.5pF Capacitor A Tile 6pF Capacitor 7pF Capacitor 2 BTile [] SPNP “ SNPN SP1204 COMPONENT COUNT SUMMARY DESCRIPTION
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SP1204
R29000
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marking MOW
Abstract: No abstract text available
Text: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package
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SSM6N04FU
marking MOW
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : R@g = 1 M il Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V ^ = 0.7~1.3V Small Package
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SSM6N04FU
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Untitled
Abstract: No abstract text available
Text: SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package
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SSM3K04FU
SC-70
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SSM6N04FU
Abstract: No abstract text available
Text: SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. · 2.5 V gate drive · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package
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SSM6N04FU
SSM6N04FU
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so2 sensor datasheet
Abstract: Contactless Sensor chip mr sensor ezmpl ezmpl gas sensor no2 Thermal Cutoffs magneto
Text: Chip Magneto Resistors Chip Magneto Resistors Type: EZMPL Type M Chip Magneto Resistor changes its resistance Value in accordance with the change of intensity of the surrounding magnetic field. This type, EZMPL is suitable as a reliable contactless sensor for detecting the number of rotations, rotation
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SSM3K04FU
Abstract: No abstract text available
Text: SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package
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SSM3K04FU
SC-70
SSM3K04FU
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SSM3K04FS
Abstract: No abstract text available
Text: SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FS High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package
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SSM3K04FS
2003-03-transportation
SSM3K04FS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS U n it in mm 2.1 ± 0.1 With Built-in Gate-Source Resistor : Rq § = 1 MO Typ. 1.25 ±0.1 2.5 V Gate Drive Low Gate Threshold Voltage E t
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SSM3K04FU
SC-70
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Source Resistor : Rq § = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7—1.3 V Small Package
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SSM3K04FU
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12 volt zener diode on pspice
Abstract: SP1204 1100 RESISTOR ARRAY 7.5 volt zener diode on pspice Nippon capacitors
Text: SP -1204 Bond Pad □ Buried Zener \•* l« Nichrome Clear Field Area N+ /P+ Diode | j P-JFET DBNPN I DBPNP ( | ) MNPN [j Pinch Resistor @ MPNP © 4.5pF Capacitor A Tile 6pF Capacitor © 7pF Capacitor 2 BTile []SPNP “ SNPN ARCHITECTURE & ORGANIZATION
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SP1204
R29000
12 volt zener diode on pspice
1100 RESISTOR ARRAY
7.5 volt zener diode on pspice
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package
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SSM3K04FE
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SSM3K04FS
Abstract: No abstract text available
Text: SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FS High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package
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SSM3K04FS
SSM3K04FS
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