Untitled
Abstract: No abstract text available
Text: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1
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LC5830K
LC5830K
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TK10203AM9
Abstract: No abstract text available
Text: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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TK10203AM9
GC3-L017A
TK10203AM9/1
HSON3030C-10
600mW*
CM105B105K16K
200mA
TK10203AM9
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CM105B104K25A
Abstract: CT21X5R105K25A TK10202AM9 AP-478
Text: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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TK10202AM9
GC3-L008A
HSON3030C-8
200mA)
600mW*
1k200mA
8k150mA
CM105B104K25A
CT21X5R105K25A
TK10202AM9
AP-478
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MUN2216
Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)
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MUN2211
SC-59
23-Jan-09
FIG32.
FIG33.
FIG34.
SC-59
MUN2216
MUN2212
MUN2213
MUN2214
MUN2215
MUN2230
MUN2231
MUN2232
0425-c
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KHB7D5N60F1
Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KHB7D5N60P1/F1/F2
KHB7D0N60P1
Fig15.
Fig16.
Fig17.
KHB7D5N60F1
KHB7D5N60F
KHB7D5N60P1
KHB7D5N60F2
tjc3
D 92 M - 02 DIODE
VDD-300V
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P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
Dissi957)
EIA-418.
P-Channel MOSFET 800v
800v irf
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFBE30L
IRFBE30S
IRL3103L
P-Channel mosfet 400v
P Channel Power MOSFET IRF
ED marking code diode
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KHB5D0N50F
Abstract: KHB5D0N50P KHB5D0N50F2
Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB5D0N50P/F/F2
KHB5D0N50P
Fig15.
Fig16.
Fig17.
KHB5D0N50F
KHB5D0N50P
KHB5D0N50F2
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KHB019N20F1
Abstract: KHB019N20F2 KHB019N20P1
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
KHB019N20F1
KHB019N20F2
KHB019N20P1
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MAX19515
Abstract: No abstract text available
Text: 19-4312; Rev 1; 9/10 KIT ATION EVALU LE B A IL A AV Dual-Channel, 8-Bit, 100Msps ADC The MAX19506 dual-channel, analog-to-digital converter ADC provides 8-bit resolution and a maximum sample rate of 100Msps. The MAX19506 analog input accepts a wide 0.4V to
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100Msps
MAX19506
100Msps.
400MHz,
MAX19506
MAX19515
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035H
Abstract: IRFPE30 PE30
Text: PD- 95712 IRFP340PbF Lead-Free Document Number: 91222 8/2/04 www.vishay.com 1 IRFP340PbF Document Number: 91222 www.vishay.com 2 IRFP340PbF Document Number: 91222 www.vishay.com 3 IRFP340PbF Document Number: 91222 www.vishay.com 4 IRFP340PbF Document Number: 91222
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IRFP340PbF
12-Mar-07
035H
IRFPE30
PE30
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FS-1133
Abstract: No abstract text available
Text: PCS3P73Z01BW Wide Frequency range TimingSafe Peak EMI reduction IC General Features 1x , LVCMOS Timing-Safe™ Peak EMI Reduction Input frequency: 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V Output frequency Timing-Safe™ : 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V
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PCS3P73Z01BW
12MHz
150MHz
15MHz
175MHz
FS-1133
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D 92 M - 02 DIODE
Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Text: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF60N06P
Fig13.
Fig14.
Fig15.
D 92 M - 02 DIODE
D 92 M - 03 DIODE
KF60N06P
c 92 M - 02 DIODE
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kf80n08
Abstract: KF80N08P kf80n08f 701p2
Text: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
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KF80N08P/F
KF80N08P
Fig15.
Fig16.
Fig17.
kf80n08
KF80N08P
kf80n08f
701p2
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D 92 M - 02 DIODE
Abstract: KF70N06
Text: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
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KF70N06P/F
KF70N06P
KF70N06P)
O-220AB
KF70N06F
Fig15.
Fig16.
Fig17.
D 92 M - 02 DIODE
KF70N06
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047N08P
Abstract: 047N08
Text: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,
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KU047N08P
Fig14.
Fig15.
Fig16.
047N08P
047N08
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KHB8D8N25F
Abstract: 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P
Text: SEMICONDUCTOR KHB8D8N25P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB8D8N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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KHB8D8N25P/F/F2
KHB8D8N25P
Fig15.
Fig16.
Fig17.
KHB8D8N25F
352AL
D 92 M - 02 DIODE
KHB8D8N25F2
KHB8D8N25P
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KHB7D0N65F1
Abstract: RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1
Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KHB7D0N65P1/F1/F2
KHB7D0N65P1
Fig15.
Fig16.
Fig17.
KHB7D0N65F1
RL46
KHB7D0N65F
KHB7D0N65F2
KHB7D0N65P1
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khb*2D0N60P
Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB2D0N60P/F/F2
KHB2D0N60P
Fig15.
Fig16.
Fig17.
khb*2D0N60P
KHB2D0N60F
KHB2D0N60P
khb*2d0n60f
KHB2D0N60F2
KHB2D0N60F equivalent
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on line ups circuit diagrams
Abstract: M30260F8AGP c21214
Text: THE NEW VALUE FRONTIER No. C0502-05002-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units
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C0502-05002-001
Fig26
on line ups circuit diagrams
M30260F8AGP
c21214
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AIC1384
Abstract: AIC1384PS c96o AIC1384PSTR MS-012AA northbridge 1384p03
Text: AIC1384 DDR Termination Regulator DESCRIPTION FEATURES The AIC1384 linear regulator is designed to deliver 1.5A continuous current and up to 3A peak transient currents for termination of DDRSRAM. The AIC1384 contains a high-speed operational amplifier to supply superior load
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AIC1384
AIC1384
25VTT)
AIC1384PS
c96o
AIC1384PSTR
MS-012AA
northbridge
1384p03
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MUN2211
Abstract: MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232
Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 2 1 SC-59 WEITRON http://www.weitron.com.tw MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)
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MUN2211
SC-59
FIG32.
FIG33.
FIG34.
SC-59
MUN2212
MUN2213
MUN2214
MUN2215
MUN2216
MUN2230
MUN2231
MUN2232
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hitachi lcd lm 234
Abstract: Hitachi DSA002720 ht 1622 LCD driver Application Note
Text: Windows CE Intelligent Peripheral Controller HD64463 User’s Manual ADE-602-167A Rev. 2.0 10/09/99 Hitachi Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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HD64463
ADE-602-167A
HD64463
hitachi lcd lm 234
Hitachi DSA002720
ht 1622 LCD driver Application Note
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CI 3060 elsys
Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.
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KS0090
26COM/64SEG
KS0090/90-I
KS0090I
KS0090I
CI 3060 elsys
rs 3060 cj
KS* I2C driver
LCD driver KS
SEG60
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Untitled
Abstract: No abstract text available
Text: O r e c o m m e n d e d o p e r a t i n g c o n d it io n Parameter Symbol Rating Unit Supply Voltage V cc 1.8—5.5 V Input Voltage V in 0—V cc V O D C OPERATING CH A R A C TER ISTIC S Unless otherwise specified Ta=-40~85°C. Vcc=1.8~5.5V Parameter Specification
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