Untitled
Abstract: No abstract text available
Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX2 Series ●General The PWM type DC/DC converter BM2PXX2 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX2 supports both isolated and non-isolated
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TK10203AM9
Abstract: No abstract text available
Text: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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TK10203AM9
GC3-L017A
TK10203AM9/1
HSON3030C-10
600mW*
CM105B105K16K
200mA
TK10203AM9
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CM105B104K25A
Abstract: CT21X5R105K25A TK10202AM9 AP-478
Text: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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TK10202AM9
GC3-L008A
HSON3030C-8
200mA)
600mW*
1k200mA
8k150mA
CM105B104K25A
CT21X5R105K25A
TK10202AM9
AP-478
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MUN2216
Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)
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MUN2211
SC-59
23-Jan-09
FIG32.
FIG33.
FIG34.
SC-59
MUN2216
MUN2212
MUN2213
MUN2214
MUN2215
MUN2230
MUN2231
MUN2232
0425-c
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NTC thermistor 10k ohm
Abstract: IR3086A IR3088A IR3510 IRF6631 IRF6635 MLPQ-32
Text: IR3510 DATA SHEET HOT-SWAP N+1 REDUNDANT XPHASE CONTROL IC DESCRIPTION The IR3510 Hot-Swap N+1 Redundant X-Phase Controller combines input isolation control for hotswappable application, X-Phase VRM/VRD control and output OR-ing control for N+1 redundant application. It interfaces with microcontroller and X-Phase phase ICs to provide a full featured and
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IR3510
IR3510
IR351
NTC thermistor 10k ohm
IR3086A
IR3088A
IRF6631
IRF6635
MLPQ-32
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KHB7D5N60F1
Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KHB7D5N60P1/F1/F2
KHB7D0N60P1
Fig15.
Fig16.
Fig17.
KHB7D5N60F1
KHB7D5N60F
KHB7D5N60P1
KHB7D5N60F2
tjc3
D 92 M - 02 DIODE
VDD-300V
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KHB5D0N50F
Abstract: KHB5D0N50P KHB5D0N50F2
Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB5D0N50P/F/F2
KHB5D0N50P
Fig15.
Fig16.
Fig17.
KHB5D0N50F
KHB5D0N50P
KHB5D0N50F2
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KHB019N20F1
Abstract: KHB019N20F2 KHB019N20P1
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
KHB019N20F1
KHB019N20F2
KHB019N20P1
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FS-1133
Abstract: No abstract text available
Text: PCS3P73Z01BW Wide Frequency range TimingSafe Peak EMI reduction IC General Features 1x , LVCMOS Timing-Safe™ Peak EMI Reduction Input frequency: 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V Output frequency Timing-Safe™ : 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V
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PCS3P73Z01BW
12MHz
150MHz
15MHz
175MHz
FS-1133
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kf80n08
Abstract: KF80N08P kf80n08f 701p2
Text: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
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KF80N08P/F
KF80N08P
Fig15.
Fig16.
Fig17.
kf80n08
KF80N08P
kf80n08f
701p2
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D 92 M - 02 DIODE
Abstract: KF70N06
Text: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS
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KF70N06P/F
KF70N06P
KF70N06P)
O-220AB
KF70N06F
Fig15.
Fig16.
Fig17.
D 92 M - 02 DIODE
KF70N06
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kf12n60
Abstract: kf12n60f kf12n60 equivalent KF12N60P *2n60P
Text: SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF12N60P/F
KF12N60P
KF12N60F
Fig15.
Fig16.
Fig17.
kf12n60
kf12n60f
kf12n60 equivalent
KF12N60P
*2n60P
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KHB8D8N25F
Abstract: 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P
Text: SEMICONDUCTOR KHB8D8N25P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB8D8N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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KHB8D8N25P/F/F2
KHB8D8N25P
Fig15.
Fig16.
Fig17.
KHB8D8N25F
352AL
D 92 M - 02 DIODE
KHB8D8N25F2
KHB8D8N25P
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KHB7D0N65F1
Abstract: RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1
Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KHB7D0N65P1/F1/F2
KHB7D0N65P1
Fig15.
Fig16.
Fig17.
KHB7D0N65F1
RL46
KHB7D0N65F
KHB7D0N65F2
KHB7D0N65P1
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on line ups circuit diagrams
Abstract: M30260F8AGP c21214
Text: THE NEW VALUE FRONTIER No. C0502-05002-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units
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C0502-05002-001
Fig26
on line ups circuit diagrams
M30260F8AGP
c21214
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MUN2211
Abstract: MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232
Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 2 1 SC-59 WEITRON http://www.weitron.com.tw MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)
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MUN2211
SC-59
FIG32.
FIG33.
FIG34.
SC-59
MUN2212
MUN2213
MUN2214
MUN2215
MUN2216
MUN2230
MUN2231
MUN2232
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quartz 12 MHz
Abstract: No abstract text available
Text: THE NEW VALUE FRONTIER No. C0502-05005-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units
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C0502-05005-001
Fig26
quartz 12 MHz
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KF9N25
Abstract: TO-220IS
Text: SEMICONDUCTOR KF9N25P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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KF9N25P/F
KF9N25P
Fig15.
Fig16.
Fig17.
KF9N25
TO-220IS
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KF7N60
Abstract: kf7n60f KF7N60P
Text: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF7N60P/F
KF7N60P
Fig15.
Fig16.
Fig17.
KF7N60
kf7n60f
KF7N60P
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TK10203AM9
Abstract: No abstract text available
Text: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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TK10203AM9
GC3-L017B
TK10203AM9/1
HSON3030C-10
HSON3030C-
600mW*
CM105B105K16K
TK10203AM9
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8K2 capacitor
Abstract: triple operational amplifier so14 N1 MARKING CODE SOT23 n1 sot23 resistor 8k2 ohm TSH330IDT TSH330 TSH330I TSH330ID marking code C9* sot23-5
Text: TSH330 1.1 GHz Low-Noise Operational Amplifier • ■ ■ ■ ■ ■ ■ Bandwidth: 1.1GHz Gain=+2 Quiescent current: 16.6 mA Slew rate: 1800V/µs Input noise: 1.3nV/√Hz Distortion: SFDR = -78dBc (10MHz, 2Vp-p) Output stage optimized for driving 100Ω
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TSH330
-78dBc
10MHz,
TSH330
160MHz
8K2 capacitor
triple operational amplifier so14
N1 MARKING CODE SOT23
n1 sot23
resistor 8k2 ohm
TSH330IDT
TSH330I
TSH330ID
marking code C9* sot23-5
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KF3N60
Abstract: No abstract text available
Text: SEMICONDUCTOR KF3N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF3N60P/F
KF3N60P
Fig15.
Fig16.
K3N60P/F
Fig17.
KF3N60
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smd diode S6 66a
Abstract: REGULATOR SMD MARKING CODE ASC
Text: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching
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OCR Scan
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1269E
IRF7507
A135OE
smd diode S6 66a
REGULATOR SMD MARKING CODE ASC
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Untitled
Abstract: No abstract text available
Text: O r e c o m m e n d e d o p e r a t i n g c o n d it io n Parameter Symbol Rating Unit Supply Voltage V cc 1.8—5.5 V Input Voltage V in 0—V cc V O D C OPERATING CH A R A C TER ISTIC S Unless otherwise specified Ta=-40~85°C. Vcc=1.8~5.5V Parameter Specification
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OCR Scan
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