transistor 400v 3a 40w
Abstract: 40w electronic ballast BUL45A crossover LE17
Text: bOE J> • fil331fl7 DDGOSDS b27 « S M L B SEMELAB PLC SEMELAB " T - 3 3 - /Í BUL45A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M EC H A N IC A L D A T A Dimensions in mm Designed for use in electronic ballast
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fil331fl7
300jiS
transistor 400v 3a 40w
40w electronic ballast
BUL45A
crossover
LE17
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BUW60
Abstract: LE17 Scans-007954
Text: SEMELAB LTD 37E T> fil331fl7 DDOOnfl SEMELAB JUL 0 8 198Q BUW 60 NPIM MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm FEATURES
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Untitled
Abstract: No abstract text available
Text: SEMELAB PLC bPE D • 8133167 QQQOblO 147 H S U L B ■■■I _ T '-'i'V M = rr= MOSPOWER4 “ I G B T m i ” SEME LAB SML65G100BN 1000V 65A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: T c = 25°C unless otherwise specified.
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SML65G100BN
SML65G100BN
IL-STD-750
O-247AD
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SML601R6KN
Abstract: LE17 SML601R3KN LG plc A-1331A
Text: SE H E LA B PLC b0E ^ G 0D Gt i 72 T21 •SMLB MOS POWER =K= 4 Mil SEME LAB SML601R3KN SML601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60ÌÌ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS *D ’ dm VGS PD VSTG All Ratings: Tc = 25°C unless otherwise specified.
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SML601R3KN
SML601R6KN
O-22QAC
LE17
LG plc
A-1331A
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diode 152
Abstract: BFC12
Text: IUI i^ E INI SEME BFC12 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 e (0 463) VDSS Terminal 1 Terminal 3 Source 2* Gate Terminal 2 Terminal 4 Drain Source 1
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BFC12
OT-227
MIL-STD-750
diode 152
BFC12
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