FIL3C Search Results

FIL3C Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FIL-3C		UDT Sensors	Photodiode, Diffused Module, 0.4A/W Sensitivity, 13nSec, 0.15nA		Original	PDF
FIL-3C		United Detector Technology	Silicon Photodiodes		Scan	PDF

FIL3C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
udt UV100 Abstract: PIN-10D PIN-10AP PIN-6DPI UDT Sensors PSD FIL-3C PIN-040A PIN-HS040 XUV-100C PIN-5DI Text: INTRODUCTION PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode Anode. B = Distance from top of glass to bottom of case. c = Photodiode Cathode Note: cathode is common to case in metal package products unless otherwise noted .	Original	PDF	UV-35P XUV-50C XUV-100C RD-100 RD-100A UV-035DC UV-100DC UV-035EC UV-100EC UV-005DC udt UV100 PIN-10D PIN-10AP PIN-6DPI UDT Sensors PSD FIL-3C PIN-040A PIN-HS040 XUV-100C PIN-5DI
PIN-5DI Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI Text: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such	Original	PDF
laser range finder schematics Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series	Original	PDF
FIL-3C Abstract: fil 3c Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,	Original	PDF
13T1 Abstract: DS137 S3BR25F s671 25A, 50V BRIDGE-RECTIFIER S3BR05F S3BR05FF S3BR10FF S3BR15FF 3 PHASE SILICON BRIDGE Text: S E M T EC H CORP SfiE compst" T> fil3cU 3 cl □ □ □ B T M b 007 m S3BR05F S3BR1F FAST RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS “ ¡S, FAST RECOVERY, LOW CURRENT 3-PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLIES QUICK REFERENCE DATA • • • • Vr = 50V - 2500V	OCR Scan	PDF	13T13T S3BR05F 300nS S3BR25F DS-137 13T1 DS137 s671 25A, 50V BRIDGE-RECTIFIER S3BR05FF S3BR10FF S3BR15FF 3 PHASE SILICON BRIDGE
FIL-3C Abstract: to-92 mosfet 13T13 Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low	OCR Scan	PDF	T0257AB SM8F13* SM8F33* SM8F23* SM8F43* T0258AA FT0258AA HDS100 FIL-3C to-92 mosfet 13T13
301B-AC Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c Text: 77C 00841 d ~ r~ 77 DË T \| ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\	OCR Scan	PDF	930nm FIL-20C FIL-100C 100x0 301B-AC United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D fil 3c