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    930NM Price and Stock

    Galco Industrial Electronics 2930NM

    Cord Grip, 3/4in.NPT, 0.125-0.37
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    DigiKey 2930NM 1
    • 1 $16.14
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    Thomas & Betts 2930NM

    Conduit Cord Connector; Cable Diameter Min:0.125"; Cable Diameter Max:0.375"; Cable Gland Material:Nylon 6 (Polyamide 6); Gland Colour:Black; Ip/Nema Rating:Not Rated; Product Range:-; Accessory Type:Cord Connector; Hub Size:0.75" Rohs Compliant: Yes |Abb Thomas & Betts 2930NM
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    Newark 2930NM Bulk 29 1
    • 1 $16.11
    • 10 $13.11
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    Bristol Electronics 2930NM 4
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    Master Electronics 2930NM
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    • 10 $13.46
    • 100 $11.92
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    T&B Fittings 2930NM

    Liquid Tight Strain Relief, 3/4in NPT, IP65, UV Resist Poly, Ranger Series | T&B Fittings by ABB 2930NM
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    RS 2930NM Bulk 28 5 Weeks 1
    • 1 $16.46
    • 10 $15.15
    • 100 $14.49
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    Vishay Intertechnologies BPV11F

    Phototransistors T-1.75 900 to 980nm +/-15 deg
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    TTI BPV11F Tube 6,000 2,000
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    TT Electronics plc OP550A

    Phototransistors PHOTOSENSOR
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    TTI OP550A Bulk 600 100
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    Find more 930NM price and stock on Findchips.com

    930NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R758

    Abstract: R636 R636-10 TPMSA0027EC R758-10
    Text: PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR R636–10:185 to 930 nm, R758–10:160 to 930nm Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response


    Original     		PDF 930nm) S-164-40 TPMS1016E03 R758 R636 R636-10 TPMSA0027EC R758-10

    TIES13A

    Abstract: TIES13
    Text: TIES13 TIES13A Gallium Arsenide Infrared-Emitting Diodes Select Products Here Go Designed to emit near-infrared radiant energy when forward biased FEATURES ● High output efficiency ● Hemispherically shaped chips with diameter of 36 mils ● Spectrally matched to silicon sensors . . . peak emission at 930nm


    Original     		PDF TIES13 TIES13A 930nm com/catalog/ties13 a/ties13

    pc123y22

    Abstract: gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK
    Text: ES: Eric Sunderhaus, JD: Jeremy Dietz, RS: Robert Stuart PART NUMBER BS100C BS500B BS520 MKT INT JD JD JD PART DESCRIPTION / REPLACEMENT Blue Sens. PD Blue Sens. PD Blue Sens. PD Lead Free Part Number Lead Free Version of Replacement BS100C0F BS500B0F


    Original     		PDF BS100C BS500B BS520 BS100C0F BS500B0F BS520E0F GA102T1M1MZ GA201TXR1ZZ GA201TXR1ZY pc123y22 gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK

    Untitled

    Abstract: No abstract text available
    Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package


    Original     		PDF PS5042-2 800nm 930nm 200pcs

    Untitled

    Abstract: No abstract text available
    Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package


    Original     		PDF PS5042-2 800nm 930nm 200pcs

    Untitled

    Abstract: No abstract text available
    Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・Lead–free soldering compatible


    Original     		PDF PS5042-2 800nm 930nm 200pcs

    Untitled

    Abstract: No abstract text available
    Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package


    Original     		PDF PS5042-2 800nm 930nm 200pcs

    ic741

    Abstract: datasheet of ic741 Ic-741 IC741 datasheet 12c508 timer heart rate sensor digital frequency meter circuit diagram ic741 8 PIN light meter block diagram pin diagram of ic741
    Text: Sensor Interface Light Meter Author: B. M. Dhananjaya Karnataka, India email: teekays@pentagon.com APPLICATION OPERATION To keep the circuit simple and small the internal 4MHz clock is used with satisfying accuracy. In case of very high accuracy measurements an external oscillator is


    Original     		PDF delay200mS dly200mS 200x1ms 200ms loop200mS DS40160A/3 015-page ic741 datasheet of ic741 Ic-741 IC741 datasheet 12c508 timer heart rate sensor digital frequency meter circuit diagram ic741 8 PIN light meter block diagram pin diagram of ic741

    Untitled

    Abstract: No abstract text available
    Text: OPTE K T E C H N O L O G Y I N C n 4âE D uaf — m „ b ? cifi5fl0 0 0 0 1 31 0 717 • OTK TM -51 Optek Standard Photodiodes OPC925 R = .4 S A/W 930nm C =10p F © 10V l0 = 3 0 n A 0 1 0 V A = 0 .6 6 m m 1 ANOOE .0 4 0 1 .0 2 .0 3 2 (0 .8 1 ) ACTIVE AR EA


    OCR Scan     		PDF OPC925 930nm OPC922 OPC929 OPC911 OPC915 OPC9013

    08D35

    Abstract: OSD50-0 QD50-0 5902 LD20-0 LD35-0 MD100-0 MD25-0 QD100-0
    Text: Series 0 General Purpose The Series 0 general purpose silicon photodiodes are designed to operate with a reverse bias voltage of up to 30 volts for applications where low capacitance or fast speed of response are important. These photodiodes are fabricated to maximize their responsivity in the 780-930nm range. The typical


    OCR Scan     		PDF 780-930nm 900nm 430nm 1064nm LD20-0, LD35-0, MD25-0, MD100-0 08D35 OSD50-0 QD50-0 5902 LD20-0 LD35-0 MD100-0 MD25-0 QD100-0

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    OP535

    Abstract: No abstract text available
    Text: L7TfiSaO DDODbflB 1 57E D OPTEK TECHNOLOGY INC OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington Type OP535 • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited


    OCR Scan     		PDF OP535 OP535

    Untitled

    Abstract: No abstract text available
    Text: niCROPAC INDUSTRIES INC 87019 42E D Di aQQ0fl3b b m PIPI INFRARED SECURE HERMETIC LED INDICATOR THi-te _ _ DESCRIPTION: These s o lid s ta te lam ps are h e rm e tic a lly sealed in TO-46 packages. They u tiliz e a u n iq ue in fra re d b lo c k in g lens to reduce


    OCR Scan     		PDF 62036-XX1 100pf 62036-XX2 62036-XX3 700nm 930nm.

    S1190 hamamatsu

    Abstract: s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02
    Text: HAMAMATSU Pin CORP AT silicon Hnotoûioaes Q4229ßDJ9 HAMAMATSU CORP DE 89D Ò20Ò2 F eatures Window Materials S1188-02 U ltra-high speed response Q / K S1188-06 S 2216-01 U ltra-high speed response, low bias type Q /K S1190 High-speed response O'/K S 1 190-01


    OCR Scan     		PDF Q4229 633nm 930nm S1188-02 S1188-06 S2506-01 S2336 S2337 S1190 hamamatsu s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02

    Untitled

    Abstract: No abstract text available
    Text: niCROPAC INDUSTRIES INC 45E D WM bll3b40 aDQaa3b b 53 MPI DESCRIPTION: These solid state lamps are herm etically sealed in TO-46 packages. They utilize a unique infrared blocking lens to reduce unused energy in accordance w ith the requirem ents of the Army Statem ent of Work on Infrared Lighting. The red and yellow


    OCR Scan     		PDF bll3b40 62036-XX1 100pf 62036-XX2 62036-XX3 700nm 930nm.

    Untitled

    Abstract: No abstract text available
    Text: High Power 980 nm Laser Model 1911A D S T A H T E A E T • High Power: he 1911A pump laser is a 980 nm laser device in a 14 90 mW to 120 mW pin butterfly package with a thermoelectric cooler and monitor photodiode. The laser is designed as a pump source • Reliable: <500 FITs


    OCR Scan     		PDF 109hours) 930nm G1911A-A

    MI33H

    Abstract: L11H 250nm MI-33H
    Text: SILICON SENSORS INC 7S Ülf| 0353*123 GGOD3afl T | 8253922 SILICON SENSORS INC 75C 00328 T D SILICON PIN PHOTODIODES MI-33HL MI-33H #9.2* M l-11H # 5 . 4 ±et #4.81*6« #871*0 1 J*d± 1 r I 't*»-* T T% î JL »8 t r r r i# 4 ,a * « • B k o *81 TH “Tl.


    OCR Scan     		PDF MI-33H MI-33HL l-11H MI-11HL MI-33HL MI-11H 2856K MUV-2537 900mV MI33H L11H 250nm

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01

    S2387

    Abstract: No abstract text available
    Text: Si Photodiodes Dimensional Outline Type No. Visible to IR Range, for Precision Photometry Active Package A rea Size ¡(P.40-44)/ Window Material* (mm) (mm) Effective Spectral Peak Active Response Sensitivity Wavelength A rea R ange Ap (m m 2) (nm ) (nm )


    OCR Scan     		PDF 633nm 930nm S2386 S2387 1010R S2387-101QR S4036 S2386-8K S2386-45K S2386-5K,

    3365bq

    Abstract: SI336
    Text: Si Photodiodes Type No. iDimensional I Outline Package P.40-44 / Window Material* (mm) (UV to IR Range, for Precision Photometry) Active Effective Spectral Area Size Active Response Area Range Peak Sensitivity Wavelength Ap (mm2) (nm) (nm) (mm) Photo Sensitivity S (A/W)


    OCR Scan     		PDF 200nm 633nm 930nm S1336 S133f, 44BK1OBR S2551 1336-5BÛ S1337- 3365bq SI336

    Untitled

    Abstract: No abstract text available
    Text: PIN Silicon Photodiodes 3 Active Area Effective Size Active Area (P.42, 43) (mm) (mm2) 2.77X2.77 7.7 Dimensional Type No. Outline Package S2506-02 S2506-04 S4707-01 © S5077 © S2973 © S3321 © Plastic mold 2.4X2.8 6.6 1.1X1.1 1.2 1X 3 3 ¿0.8 0.5 Peak


    OCR Scan     		PDF S2506-02 S2506-04 S4707-01 S5077 S2973 S3321 S5573 633nm 930nm KPINB0063EB

    TEYD5500

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC 17E D ^ • filBOOlb 00067*16 1 ■ AL6G TEYD5500 T'Ji -¡T2 TfiUIFttilMGIIfil electronic C r t t t w Itchnotofltes I •_ Silicon Photo PIN Diode N-Type in clear plastic package for plastic fiber connection


    OCR Scan     		PDF TEYD5500 930nm r-Wi-53

    226e

    Abstract: BC 227
    Text: 0"i" bllicon nu r * ~J Dimensional Active Outline Type No. UV to Visible Range, for Precision Photometry, Suppressed IR Sensitivity nOtOOlOOGS P ackage A rea Size (P.38-40)/ Window Material* (mm) (mm) Photo Sensitivity S (A /W ) Peak Effective Spectral Active


    OCR Scan     		PDF 200nm 633nm 930nm S1226 S1226-18BQ S1226-18BK S1226-5BQ S1226-5BK S1226-44BQ S1226-44BK 226e BC 227