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    Panasonic Electronic Components FJ6K01010L

    MOSFET P-CH 12V 4A WSMINI6
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    FJ6K01 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FJ6K01010L Panasonic Electronic Components Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 12V 4A WSMINI6 Original PDF

    FJ6K01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12484 Revision. 2 Product Standards MOS FET FJ6K01010L FJ6K01010L Silicon P-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low drain-source On-state resistance : RDS on typ. = 26 m  ( VGS = -4.5 V )


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    TT4-EA-12484 FJ6K01010L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FJ6K0101 Silicon P-channel MOS FET For load switch circuits • Overview  Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load switch circuits.  Features  Low drain-source ON resistance: RDS(on) = 36 mW (VGS = –1.8 V)


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    2002/95/EC) FJ6K0101 FJ6K0101 PDF

    FJ6K0101

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FJ6K0101 Silicon P-channel MOS FET For load switch circuits • Overview  Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load switch circuits.  Code WSMini6-F1-B


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    2002/95/EC) FJ6K0101 FJ6K0101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Realizing miniaturization of the set and loss reduction by small package and low on-resistance P-channel MOS FET FJ6K0101 for load switches „ Overview FJ6K0101 is a low-on-resistance MOS FET which is suitable for load switches. It is a halogen-free small package WSMini6-F1-B


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    FJ6K0101 DD00003AE PDF

    FJ6K0101

    Abstract: ZJF00146BED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FJ6K0101 Silicon P-channel MOS FET For load switch circuits • Overview  Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load switch circuits.  Features  Low drain-source ON resistance: RDS(on) typ. = 36 mW (VGS = –1.8 V)


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    2002/95/EC) FJ6K0101 FJ6K0101 ZJF00146BED PDF

    fj6k01

    Abstract: No abstract text available
    Text: FJ6K01010L FJ6K01010L Silicon P-channel MOSFET Unit: mm for Switching • Features  Low drain-source On-state Resistance:RDS on typ. = 26 mΩ (VGS = -4.5 V)  Low drive voltage: 1.8 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)


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    FJ6K01010L UL-94 FJ6K01010L SC-113DA fj6k01 PDF

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


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    A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY PDF