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    Untitled

    Abstract: No abstract text available
    Text: Ku B A N D IN T ERN A LLY M A T C H E D G aA s FET MGFKxxVxxxx Series T y p ic a l C h a ra c te ristic s Type M G FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S PidB dBm GlP f (dB) (GH z )


    OCR Scan     		PDF FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2228 1 2 .2 — 1 2 .8 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F K 3 5 V 2 2 2 8 is an in te rn a lly impedance matched GaAs pow er F E T especially designed fo r use in 12 .2 — 12 .8


    OCR Scan     		PDF MGFK35V2228

    fet 30 f 124

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK3SV2228 12.2— 12.86Hz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK 35V2228 is an internally impedance matched GaAs power FET especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFK3SV2228 MGFK35V2228 fet 30 f 124