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    K35V4045

    Abstract: FK35V4045
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK35V4045 14.0— 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 .0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF FK35V4045 35V4045 200nnA) K35V4045 FK35V4045

    MGFK35V2732-01

    Abstract: MGFK35V2732-51 MGFK35VXXXX FK35V
    Text: ^M ITSUBISHI MGFK35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFK35VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 3.5 (TYP)


    OCR Scan     		PDF MGFK35VXXXX MGFK35VXXXX MGFK35V2228 MGFK35V2228-01 MGFK35V2228-51 MGFK35V2732-01 MGFK35V2732-51 MGFK35V4045-01 FK35V4045-51 MGFK35V2732-51 FK35V