KSC3120
Abstract: No abstract text available
Text: KSC3120 KSC3120 Mixer for UHF TV Tuner • GCE=17dB TYP. • CRE=0.6pF (TYP.) 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter
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KSC3120
OT-23
KSC3120
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Untitled
Abstract: No abstract text available
Text: Jbemi-donducto'i ^Products., Line. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG BLV25 is a 28 V silicon NPN power transistor designed primarily for
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BLV25
BLV25
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BFR94A
Abstract: No abstract text available
Text: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.
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BFR94A
OT122E
BFR94A
BFH94.
45004B)
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1838 infrared
Abstract: SN62PB36AG02 Sn63pB37 temp profile 210C C1210C104K5RAC amplifier application notes 4254x microwave amplifier
Text: Submit by Email Spectrum Microwave Amplifier Application Notes Application Note - LCA - Low Cost Amplifiers Introduction The LCA product line is designed for use in high volume commercial applications. This application note provides mechanical, electrical and mounting details for proper use and installation of the LCA product
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E52-19422.
E5219422
1838 infrared
SN62PB36AG02
Sn63pB37 temp profile
210C
C1210C104K5RAC
amplifier application notes
4254x
microwave amplifier
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c1615
Abstract: 2SC1615 ic 6802 2SC4036
Text: ROHM CO L T D MOE ' T A S A I T ! D Q Q 0 S b 3 fl h H R H M 2SC1615/2SC4036 h 7 > y ^ ^ / T ransistors “ T - 2 7 - Ö 7 H 2S C 1615 f i î È i è y L ^ - ^ N P N E I Î Œ ^ Œ iiÎ if f l/ H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors
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0Q05b3fl
2SC1615/2SC4036
27-Oy
2SC1615
2SC4036
T-27-07
c1615
2SC1615
ic 6802
2SC4036
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2sC1651 transistor
Abstract: 2SC1651
Text: /T ra n sisto rs S 2 C 1 6 5 2SC1651 U - ^ N P N '> v = l> T riple D iffusied NPN S ilicon Transistor iiiiiJ E ^ J E iS 'f if f l/ H ig h V oltage A m p. 1 • ^J K ^ jiiG -fl/D im e n s io n s U n it: mm 1) MHHHLT$>5 o V c e r= 2 1 0 V 2 i Sl i t t f r ' Sl '
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2SC1651
2sC1651 transistor
2SC1651
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2PD601A
Abstract: No abstract text available
Text: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59
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711002b
2PB709;
2PB709A
2PD601
2PD601A
-SC59
2PB709Q:
2PB709R:
2PB709S:
2PB709AQ:
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RCA-2N6686
Abstract: 2N6688 2n6888 92CS-30387 2N6686 2N6687
Text: 3875081 G E SOLID STATE 01 DE 1 3 0 7 5 0 0 1 0017D2fi i| I , T Sw ttetM ajf Power Transistor*_ 5 - - • 2N6686, 2N6687, 2N6688 J _! File N u m b e r ' / „ _ 1171 25-A Sw itchM aX Power Transistors
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2N6686,
2N6687,
2N6688
O-204AA
RCA-2N6686,
2N6688*
FREQS500Hr
2N6354
2N3762
RCA-2N6686
2N6688
2n6888
92CS-30387
2N6686
2N6687
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Untitled
Abstract: No abstract text available
Text: i COLLMER SEMICONDUCTOR INC 5SE D • 55367^2 0Q011G4 fl ■ 7 '33-?£ |3 j 1200 volts class IG B T modules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for power converters. • The voltage drive element enables the drive circuit to be miniaturized and used in com m on.
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0Q011G4
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7dw npn
Abstract: 20AWG 20ID ARC0421 M111 SD1429
Text: HMS'nanr-ts^-inan/i,S Com m erceD rive i i uo in I lt ug u ine er iy yv vi Il il ic n /fl/C f f I I iM om e,. rP A18936-1013 Tel: 215 631-9840 iu j j u iu i j ^ a A A SD1429 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS
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450-512MHz
470MHz
SD1429
M20pF,
2-25pF,
ARC0421
1000pF,
10ilF.
7dw npn
20AWG
20ID
M111
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Untitled
Abstract: No abstract text available
Text: F k Saturating chokes HI Series The inductance of saturating-type chokes reduces as load current increases, and is ideal for attenuating the differential-mode or symmetrical interference generated by fast-switching thyristors, triacs, transistors and phase angle control devices. Inductance values are
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Untitled
Abstract: No abstract text available
Text: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps
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FZT955
FZT956
OT223
FZT955
FZT855
FZT956
-100mA,
50MHz
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Untitled
Abstract: No abstract text available
Text: m 2N3740 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS 4.0 lc VcEO -60 V P diss 25 W @ Tc = 25 °C Tj -65 to +200 °C
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2N3740
2N3740
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Untitled
Abstract: No abstract text available
Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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4E7 philips
Abstract: KY 711 VN2406L FL 210 transistor
Text: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n
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711002b
VN2406L
MBB073
711Dfl5h
D0bfl057
MC9357
4E7 philips
KY 711
VN2406L
FL 210 transistor
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power switching with IRFP450 schematic
Abstract: application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS IRFP453FI
Text: 3DE D DQSTôB? T • [ Z T S G S -T H O M S O N * 7 # ^ [ » » 1 ™ * ^ - s TYPE VDSs 500 500 450 450 500 500 450 450 V V V V V V V V IR F P 4 5 0 / F I - 4 5 1 /F I IR F P 4 5 2 / F I - 4 5 3 /F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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450/FI-451/FI
452/FI-453/FI
IRFP450
IRFP450FI
IRFP451
IRFP451FI
IRFP452
IRFP452FI
IRFP453
IRFP453FI
power switching with IRFP450 schematic
application IRFP450
IRFP 450 application
irfp
transistor irfp
switching with IRFP450 schematic
SCHEMATIC WITH IRFP 450
IRFP P CHANNEL
SMPS CIRCUIT DIAGRAM USING TRANSISTORS
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CTC 1061
Abstract: transistor 2SB815 2SB815 2SB817 2SD1047 2SB832 2SB817 2SD1047
Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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12juS
SB832
CTc-25
CTC 1061
transistor 2SB815
2SB815
2SB817
2SD1047
2SB832
2SB817 2SD1047
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PDF
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BFR94
Abstract: BFR94A
Text: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross
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BFR94A
OT122E
BFR94A
BFR94.
Q031flfl3
BFR94
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PDF
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Untitled
Abstract: No abstract text available
Text: m 2N6211 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. MAXIMUM RATINGS V PACKAGE STYLE T O - 66 2.0 A lc 275 V cb IN C H E S A 6 C D E F G H J K L M O m < 225 V 35 W @ Tc = 25 °C
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2N6211
2N6211
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Untitled
Abstract: No abstract text available
Text: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STH6N100
STH6N100FI
100FI
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PDF
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BVC71
Abstract: BCV71R BCV71 BCV72 BCV72R DS42 S0T23 ctc4
Text: BCV71 BCV72 S0T 23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR PA RT M A RKIN G DETAILS:BVC71 - K7 BCV72 - K8 BCV 71R - K6 BCV 72R - K9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L VALUE U N IT Collector-Base Voltage V CBO 80 V Collector-Em itter Voltage
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S0T23
BCV71
BCV72
-BVC71
BCV71R
BCV72R
35MHz
BVC71
DS42
ctc4
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PDF
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D00373
Abstract: GDG3737 A138
Text: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN
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05DM33Ã
GDG3737
T-91-01
D00373
A138
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PDF
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Untitled
Abstract: No abstract text available
Text: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C
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BCW31
BCW32
BCW33
BCW31
BCW32
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio
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ZTX1051A
R100MHz
lB-40mA,
100mA
0D11D3D
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