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    Untitled

    Abstract: No abstract text available
    Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type


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    PDF fl23b32Q GG1722S SMBT2907 Q68000-A4336 Q68000-A4337 Q68000-A6501 Q68000-A6474 1/CE-20V 23b32Q A23b32G

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code


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    PDF Q62702-C1683 Q62702-C1685 Q62702-C1852 Q62702-C1854 6E3b32Q 0Qlbb73 BCV28 BCV48 T-29-29

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance


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    PDF 23b3S0 QQ17177 BSS192 -240V Q62702-S602 23b320 T-37-25 80f/a;

    RTM 866 - 485

    Abstract: No abstract text available
    Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 023ti32Q BFP93A 62702-F OT-143 RTM 866 - 485

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0


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    PDF 53b320 Q67000-S068 A23b320 T-39-05

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • ñ23b35Q ÜQlbSö^ Ô « S IP Silicon Switching Diode SIEMENS/ SMBD 914 SPCLi SEMICONDS _ T ~ C Z - 0 ? • For high-speed switching applications Type Marking SMBD 914 S5D Ordering code for versions in bulk Q68000-A6418 Ordering code for


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    PDF 23b35Q Q68000-A6418 Q68000-A625 023b3SQ 23b32Q

    Untitled

    Abstract: No abstract text available
    Text: BEE D • û53b32Q QG1712b b « S I P NPN Silicon Switching Transistors 3 S'” I Ì SIEMENS/ S P C L i • • • SEMKONDS BSS79 BSS 81 _ High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, BSS 82 PNP


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    PDF 53b32Q QG1712b BSS79 Q62702-S403 Q62702-S402 Q62702-S420 Q62702-S419 Q62702-S503 Q62702-S501 Q62702-S555

    BC5471

    Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
    Text: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N


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    PDF BC1671 BC1681 BC1821 BC2121 BC2371 BC2381 BC2391 BC2571 BC2581 BC2591 BC5471 BC547E BC 548 NPN relay 876 N 2C S BC5461 BC516 548 BC550 bc4151 TLC 5491

    g 995

    Abstract: No abstract text available
    Text: 32E D m 023b32Q OOlbôQ? 3 H S I P BF 995 Silicon N Channel MOSFET Tetrode SIEMENS/ SPCLi SEMICONDS _ For FM and VHF TV input and mixer stages Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 995 MB Q62702-F872


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    PDF 023b32Q Q62702-F872 Q62702-F936 23b32Ã g 995

    BFR92P

    Abstract: No abstract text available
    Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.


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    PDF 0G17GQ2 BFR92P OT-23 BFR92P

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor 35E D • ^ 3 H 7 023b32Q 0011=701 □ H S I P BF775 _ SIEMENS/ SPCL-i SEMICONDS • • Broadband amplifier, mixer, oscillator, and switching applications up to 2 GHz Specially suited for use in TV-sat and UHF TV tuners Type Marking


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    PDF 023b32Q BF775 Q62702-F991 Q62702-F102 23b320 T-31-17

    BT 815 transistor

    Abstract: BT 816 transistor
    Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code


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    PDF 0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor

    Untitled

    Abstract: No abstract text available
    Text: f - Silicon N Channel M O SFET Tetrode 3SE D • 31 BF 989 &53b35Q OOlbTfl? 1 ■ S I P SIEMENS/ S P CL i SEMICONDS For amplifier and mixer stages in UHF and VHF TV tuners Low Input and output capacitance Type Marking Ordering code for versions In bulk Ordering code for


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    PDF 53b35Q Q62702-F874 Q62702-F969 23b320 BP989 200MHz;

    62703-F

    Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
    Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure


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    PDF 0G1734Ô CFY30 62703-F OT-143 fl23b32Q GG173S7 T--31--25 CFY30 GaAs FET cfy 19 siemens gaas fet

    B80C

    Abstract: No abstract text available
    Text: B EE D • ô23b32Q Q017131 T « SIP PNP Silicon Switching Transistors _ S IE M E N S / SPCLi BSS 80 BSS 82 T ' SEM ICO N D S _ High D C current gain Low collector-emitter saturation voltage Complementary types: B S S 79, B S S 81 NPN Type BSS


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    PDF 23b32Q Q017131 Q62702-S398 Q62702-S399 Q62702-S409 Q62702-S408 Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 B80C

    Untitled

    Abstract: No abstract text available
    Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 23b320 BFR35AP 62702-F OT-23 T-31-17

    Untitled

    Abstract: No abstract text available
    Text: BEE D • 023b32Q QGlb7EM T H S I P NPN Silicon RF Transistor BF 517 SIEMENS/ SPCL-. SEMICONDS • r ^ 3 i - t 7 _ Broadband amplifier and oscillator applications up to 1 GHz Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape


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    PDF 023b32Q Q62702-F988 Q62702-F78 fl23b32Q. GQlb72b BF517 T-31-17

    Untitled

    Abstract: No abstract text available
    Text: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 023b3SG 62702-F1 OT-143 -J250