Untitled
Abstract: No abstract text available
Text: MEMORY MODULE NAND Flash 512Gb 3DFN512G08VB2453 NAND Flash Memory 512Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Organization (per basic component):
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512Gb
3DFN512G08VB2453
512Gbit
JESD47G
3DFP-0453-REV
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE NAND Flash 256Gb NAND Flash Memory 3DFN256G08VB1452 256Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Organization: Page size x8: 8640 bytes
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256Gb
3DFN256G08VB1452
256Gbit
JESD47G
12ure
3DFP-0452-REV
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JESD47G
Abstract: No abstract text available
Text: MEMORY MODULE NAND Flash 256Gb 3DFN256G08VB1456 NAND Flash Memory 256Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.2 compliant - Multi Level Cell (MLC) technology - Organization: Page size x8: 8640 bytes
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256Gb
3DFN256G08VB1456
256Gbit
JESD47G
3DFP-0456-REV
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3DFN64G08
Abstract: 3DFN64 64Gbit
Text: MEMORY MODULE NAND Flash 64Gb 3DFN64G08VB1450 NAND Flash Memory 64Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Organization: Page size x8: 4320 bytes
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3DFN64G08VB1450
64Gbit
3DFP-0450-REV
3DFN64G08
3DFN64
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3d plus memory
Abstract: No abstract text available
Text: MEMORY MODULE NAND Flash 64Gb 3DFN64G08VB1454 NAND Flash Memory 64Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.2 compliant - Multi Level Cell (MLC) technology - Organization: Page size x8: 8640 bytes
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3DFN64G08VB1454
64Gbit
JESD47G
3DFP-0454-REV
3d plus memory
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE NAND Flash 1Tb 3DFN1T08VB2458 NAND Flash Memory 1Tbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.2 compliant - Multi Level Cell (MLC) technology - Organization (per basic component): Page size x8: 8640 bytes
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3DFN1T08VB2458
JESD47G
3DFP-0458-REV
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K9F2G08U0B-PCB0
Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●
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K9F2G08U0B
07-Sep-2010
K9F2G08U0B-PCB0
samsung K9 flash
Toggle DDR NAND flash
K9F2G08U0B-PIB0
samsung 128G nand flash
movinand DECODER
Samsung EOL
K9F2G08U0B-PIB00
samsung toggle mode NAND
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R5F100
Abstract: R5f10 R5F1006 R5F1006EASP qfp 0.4mm RL78 renesas RL78 RL78G13 R5F1006E
Text: R5 F 1 00 6 E x A SP Renesas MCU ROM Type RL78 F: Flash Series Product Group Pin Count 00 G13 Data Flash 01 G13 No Data Flash 6 20 02 G12 Data Flash 7 24 Package ROM Size KB 03 G12 No Data Flash 8 25 6 2 04 G14 Data Flash A 30 7 4 8 07 I1A Data Flash B 32
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RL78/G13
20-pin)
R5F1006EASP
R5F100
R5f10
R5F1006
R5F1006EASP
qfp 0.4mm
RL78
renesas RL78
RL78G13
R5F1006E
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28F3202C3
Abstract: 29066
Text: PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-Mbit SRAM - 28F1602C3 16-Mbit Flash + 4-Mbit SRAM - 28F1604C3 32-Mbit Flash + 4-Mbit SRAM - 28F3204C3 32-Mbit Flash + 2-Mbit SRAM - 28F3202C3 ! Flash Memory Plus SRAM
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16-Mbit
28F1602C3
32-Mbit
28F3204C3
28F1604C3
28F3202C3
16-Mb
32-Mb
28F3202C3
29066
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25U4035
Abstract: 25U1635E uson+8+land+pattern
Text: The Ultimate Performance Flash Memory Macronix Serial Multi I/O MXSMIOTM Flash www.macronix.com Contents Why Use MXSMIOTM Family? 3 ● Advantages of Macronix Serial Multi-I/O Flash Family 4 ● Worldwide NOR Flash Trend 5 ● The Fastest Performance Serial Flash on the Market
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electronique package
Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
Text: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu
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D-85737
S-19268
FEDE-FLASH-0998
electronique package
electronique
cdx3
fujitsu Flash Memory Miniature Card
AMD PCMCIA linear Flash Memory Card
2M - FLASH PCMCIA linear card
MB98A81183-15
1M - FLASH PCMCIA linear card
PCMCIA SRAM Memory Card 512k
5v eeprom Memory 32Mbit
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SST32HF324C
Abstract: No abstract text available
Text: Multi-Purpose Flash + SRAM ComboMemory SST32HF324 / SST32HF328 SST32HF324C / SST32HF328C SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – SST32HF324x: 2M x16 Flash + 256K x16 SRAM
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SST32HF324
SST32HF328
SST32HF324C
SST32HF328C
32832Mb
SST32HF324x:
SST32HF328x:
SST32HF32x:
SST32HF32xC:
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE NOR FLASH 256Mx16-BGA Flash Memory MODULE 3DFO4G16VB2408 4Gbit Nor Flash organized as 258Mx16, based on 128Mx16 Pin Assignment Top View BGA 64 Features - Single supply for read/program/erase (2.7V to 3.6V) - VIO = VCC = 2.7 to 3.6V - x16 data bus
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256Mx16-BGA
3DFO4G16VB2408
258Mx16,
128Mx16
16-word/32-byte
512-byte
128-Kbytes
1024-byte
MMXX00000000XXX
3DFP-0408-REV
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256kx8 sram 5v
Abstract: toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb
Text: Toshiba America Electronics Search SRAM - Low Power Asynchronous Press Releases | Select One DRAM Components DRAM Components Archive DRAM Modules DRAM Modules (Archive) Flash - NOR Flash - NAND 5V Flash - NAND 3.3V Flash - SmartMedia Multi-Chip Package SRAM - Low Power
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TC551001C,
128Kx8
TC551001CI,
TC554001A-V
TC554001AI
ismatch/20000921/09112000/TOSH/09112000/1
TC55V200
TC55V2001
TC55V2001I
256kx8 sram 5v
toshiba TSOP
toshiba Nand flash bga
SRAM 512*8
NAND FLASH BGA
256kx8 sram
128kx16
toshiba nand
Toshiba America Electronics
toshiba nand flash 4Mb
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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a21l
Abstract: MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 96M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM MB84VFAF5F5J1-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
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MB84VFAF5F5J1-70
115-ball
F0211
MB84VFAF5F5J1
a21l
MARKING HRA
SGA43
marking code 4e
SA98
sga36
sga39
SA132
SGA33
sga5400
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 ± 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View - BGA 120 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE NOR FLASH 64Mx16-BGA Flash Memory MODULE 3DFO1G16VB2360 1Gbit Nor Flash organized as 64Mx16, based on 32Mx16 Pin Assignment Top View BGA 64 Features - Single 3V read/program/erase (2.7V-3.6V) - VCC = VIO = 2.7 to 3.6V - 8-word/16-byte page read buffer
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64Mx16-BGA
3DFO1G16VB2360
64Mx16,
32Mx16
8-word/16-byte
32-word/64-byte
Kword/128
MMXX00000000XXX
3DFP-0360-REV
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LQFP128
Abstract: DMA stm32 STR911fa STM32 freertos PMSM control based stm32 LQFP80 STM32 induction motor control Micrium stm32 10
Text: STR910 32-bit Flash Microcontroller Embedding connectivity 32-bit ARM9-based Flash Microcontrollers April 2008 STR910FA with ARM966E Core A “Super-ARM7” Flash Microcontroller First ARM9E core in general-purpose Flash ARM-based MCUs Easy upgrade path for STR7 users
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STR910
32-bit
32-bit
STR910FA
ARM966E
288kB
STM32
com/stm32
LQFP128
DMA stm32
STR911fa
STM32
freertos
PMSM control based stm32
LQFP80
STM32 induction motor control
Micrium
stm32 10
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BC41315
Abstract: BC413159A11 Bluelab Bluelab SDK CSR BlueCore4 BlueCore4 BC413159A11-IQA-E4 CSR Bluevox BC413159A bluetooth headset
Text: Product Brief BlueVOX Flash + BlueLab SDK Low cost, fully flexible Bluetooth headset solution Based on BlueCore4-Audio Flash: low cost Bluetooth chip with reprogrammable flash memory All software held in Flash for full flexibility, no external EEPROM needed
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BV-001-3A,
BC41315
BC413159A11
Bluelab
Bluelab SDK
CSR BlueCore4
BlueCore4
BC413159A11-IQA-E4
CSR Bluevox
BC413159A
bluetooth headset
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE NOR FLASH 128Mx16-BGA Flash Memory MODULE 3DFO2G16VB2361 2Gbit Nor Flash organized as 128Mx16, based on 64Mx16 Pin Assignment Top View BGA 64 Features - Single 3V read/program/erase (2.7V-3.6V) - VIO = VCC = 2.7 to 3.6V - 8-word/16-byte page read buffer
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128Mx16-BGA
3DFO2G16VB2361
128Mx16,
64Mx16
8-word/16-byte
32-word/64-byte
Kword/128
MMXX00000000XXX
3DFP-0361-REV
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107-pin
Abstract: FCRAM MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAM TM MB84VF5F4F5J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
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MB84VF5F4F5J1-70
107-ball
107-pin
FCRAM
MBM29DL64DF
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MARKING HRA
Abstract: 4kw marking diode F4 4e
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064G-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
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MB84VZ064G-70
107-ball
MARKING HRA
4kw marking
diode F4 4e
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