fujitsu gaas fet
Abstract: FLC107WG
Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general
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FLC107WG
FLC107WG
FCSI0598M200
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general
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FLC107WG
FLC107WG
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fujitsu gaas fet
Abstract: FLC107WG
Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general
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Original
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FLC107WG
FLC107WG
FCSI0598M200
fujitsu gaas fet
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PDF
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Untitled
Abstract: No abstract text available
Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: hadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general
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FLC107WG
FLC107WG
FCSI0598M200
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PDF
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FLC107WG
Abstract: No abstract text available
Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general
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FLC107WG
FLC107WG
Te4888
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C-Band Power GaAs FET
Abstract: FLC107WG
Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general
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FLC107WG
FLC107WG
Temp71
C-Band Power GaAs FET
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flc107
Abstract: No abstract text available
Text: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general
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FLC107WG
FLC107WG
flc107
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FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
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FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
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fujitsu gaas fet
Abstract: FLC107WG
Text: FLC107WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package
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FLC107WG
FLC107WG
FCSI0598M200
fujitsu gaas fet
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